公开(公告)号：US20240234101A1

公开(公告)日：2024-07-11

申请号：US18613512

申请日：2024-03-22

Applicant: INNOVATION FOR CREATIVE DEVICES CO., LTD.

Inventor： Buil JEON ,  Taeho SHIN ,  Dooho LIM ,  Jungsu PARK ,  Bumsoo ON ,  Seungho LEE

IPC: H01J37/32

CPC classification number: H01J37/32633 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32357 ,  H01J2237/0203 ,  H01J2237/3343

Abstract: A plasma substrate treatment apparatus according to one embodiment of the present invention comprises: a remote plasma generator for generating plasma and an active species; an upper chamber having an opening connected to an output port of the remote plasma generator and receiving and diffusing the active species of the remote plasma generator; a first baffle disposed on the opening of the upper chamber; a lower chamber receiving the diffused active species from the upper chamber; a second baffle partitioning the upper chamber and the lower chamber and transmitting the active species; a substrate holder for supporting a substrate disposed in the lower chamber; and an RF power source applying RF power to the substrate holder.

公开(公告)号：US20240258079A1

公开(公告)日：2024-08-01

申请号：US18631194

申请日：2024-04-10

Applicant: INNOVATION FOR CREATIVE DEVICES CO., LTD.

Inventor： Buil JEON ,  Taeho SHIN ,  Dooho LIM ,  Jungsu PARK ,  Bumsoo ON ,  Seungho LEE

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/32091 ,  H01J37/3211 ,  H01J37/32146 ,  H01J37/32357 ,  H01J2237/334

Abstract: A plasma substrate processing apparatus according to one embodiment of the present invention comprises: a process chamber; an upper electrode disposed in the process chamber; a substrate holder disposed under the upper electrode and facing the upper electrode to support a substrate; and an RF power source for applying RF power to the substrate holder. The upper electrode includes: an upper electrode conductive plate having lower surfaces with different heights from the substrate holder according to positions thereof; and a compensating plate coupled to a lower portion of the conductive plate, having a different thickness according to positions thereof to compensate for a height difference according to the positions of the upper electrode conductive plate, and having a dielectric constant. The lower surface of the compensating plate is coplanar.

公开(公告)号：US20240387153A1

公开(公告)日：2024-11-21

申请号：US18788887

申请日：2024-07-30

Applicant: INNOVATION FOR CREATIVE DEVICES CO., LTD.

Inventor： Pyung-Woo LEE ,  Seungho LEE ,  Taeho SHIN ,  Buil JEON ,  Dooho LIM ,  Jungsu PARK ,  Jin Won KONG ,  Bumsoo ON

IPC: H01J37/32 ,  H01L21/683

Abstract: An electrostatic device according to one embodiment of the present invention comprises: an electrostatic electrode layer; a dielectric layer arranged on the electrostatic electrode layer; and a ring-shaped protrusion part arranged and formed on an edge of the dielectric layer, wherein the protrusion part forms a concave area, the concave area is filled with a cooling gas, and the protrusion part comprises a flat area and a surface treatment area to which a roughening treatment has been performed.

公开(公告)号：US20240249919A1

公开(公告)日：2024-07-25

申请号：US18623190

申请日：2024-04-01

Applicant: INNOVATION FOR CREATIVE DEVICES CO., LTD.

Inventor： Buil JEON ,  Taeho SHIN ,  Dooho LIM ,  Jungsu PARK ,  Bumsoo ON ,  Seungho LEE

IPC: H01J37/32

CPC classification number: H01J37/32357 ,  H01J37/32027 ,  H01J37/321 ,  H01J2237/334

Abstract: A substrate treatment apparatus, according to one embodiment of the present invention, comprises: a remote plasma generator for generating remote plasma and an active species; an upper chamber having an opening connected to an output port of the remote plasma generator, and receiving and diffusing the active species of the remote plasma generator; a lower chamber for receiving the active species which has been diffused in the upper chamber; a main baffle for partitioning the upper chamber and the lower chamber and permeating the active species; a substrate holder for supporting a substrate disposed in the lower chamber; a RF power source for forming main plasma by applying RF power to the substrate holder; and a DC pulse power source for applying a DC pulse to the substrate holder.