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公开(公告)号:US20170236575A1
公开(公告)日:2017-08-17
申请号:US15585678
申请日:2017-05-03
Applicant: Intel Corporation
Inventor: Bruce QUERBACH , Kuljit BAINS , John HALBERT
IPC: G11C11/406 , G11C11/4094
CPC classification number: G11C11/40618 , G11C11/40615 , G11C11/4074 , G11C11/4094 , G11C11/4096
Abstract: Embodiments are generally directed to memory refresh operation with page open. An embodiment of a memory device includes a memory array including a plurality of memory banks; and a control logic to provide control operations for the memory device including a page open refresh mode, wherein the control logic is to perform a refresh cycle in response to a refresh command with a memory page of the memory array open, the refresh operation including precharge of one or more memory banks of the plurality of memory banks, refresh of the one or more memory banks, and activation of the memory page.
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公开(公告)号:US20190042275A1
公开(公告)日:2019-02-07
申请号:US15943605
申请日:2018-04-02
Applicant: Intel Corporation
Inventor: Christopher CONNOR , Bruce QUERBACH
IPC: G06F9/4401
Abstract: Examples include techniques for booting a computing system. A processor semiconductor chip includes one or more processing cores and an embedded non-volatile random-access memory (NVRAM), the NVRAM storing instructions that when executed by the one or more processing cores manages a boot process for a computing system.
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公开(公告)号:US20170084351A1
公开(公告)日:2017-03-23
申请号:US15368402
申请日:2016-12-02
Applicant: INTEL CORPORATION
Inventor: Bruce QUERBACH , William K. LUI , David G. ELLIS , David J. ZIMMERMAN , Theodore Z. SCHOENBORN , Christopher W. HAMPSON , Ifar WAN , Yulan ZHANG
CPC classification number: G11C29/38 , G06F11/263 , G06F11/27 , G11C11/406 , G11C29/10 , G11C29/1201 , G11C29/16 , G11C29/18 , G11C29/20 , G11C29/36 , G11C29/4401 , G11C29/72 , G11C29/78 , G11C29/783 , G11C2029/1202 , G11C2029/1204 , G11C2029/1206 , G11C2029/1208 , G11C2029/3602 , G11C2029/4402
Abstract: In accordance with the present description, a device includes an internal defect detection and repair circuit which includes a self-test logic circuit built in within the device and a self-repair logic circuit also built in within the device. In one embodiment, the built in self-test logic circuit may be configured to automatically identify defective memory cells in a memory. Upon identifying one or more defective memory cells, the built in self-repair logic circuit may be configured to automatically repair the defective memory cells by replacing defective cells with spare cells within the memory. In one embodiment, data patterns are generated as a function of memory addresses and periodic address offsets. Other aspects are described herein.
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4.
公开(公告)号:US20180095909A1
公开(公告)日:2018-04-05
申请号:US15283186
申请日:2016-09-30
Applicant: INTEL CORPORATION
Inventor: Bruce QUERBACH , Pete D. VOGT
IPC: G06F13/16
CPC classification number: G06F13/1678 , G06F1/18 , G06F13/1694 , G11C5/06
Abstract: Electronic devices and methods including a printed circuit board configured to accept CPUs and memory modules are described. One apparatus includes a printed circuit board (PCB) that includes a printed circuit board defining a length and a width, the length being greater than the width. The apparatus includes a first row of elements on thePCB, including a first memory region configured to receive at least one memory module. The apparatus includes a second row of elements on the PCB, including a first central processing unit (CPU) socket configured to receive a first CPU, and a second CPU socket configured to receive a second CPU, the first CPU socket and the second CPU socket positioned side by side along the width of the PCB. The apparatus also includes a third row of elements on the PCB, including a second memory region configured to receive a at least one memory module, wherein the second row of elements is positioned between the first row of elements and the third rows of elements. Other embodiments are described and claimed.
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公开(公告)号:US20170352406A1
公开(公告)日:2017-12-07
申请号:US15174946
申请日:2016-06-06
Applicant: Intel Corporation
Inventor: Bruce QUERBACH , Kuljit S. BAINS , John B. HALBERT
IPC: G11C11/406 , G06F3/06 , G11C14/00
CPC classification number: G11C11/40618 , G06F3/0604 , G06F3/0632 , G06F3/0659 , G06F3/0679 , G11C11/40603 , G11C11/40611 , G11C11/40622 , G11C14/0009
Abstract: A memory subsystem enables a refresh abort command. A memory controller can issue an abort for an in-process refresh command sent to a memory device. The refresh abort enables the memory controller to more precisely control the timing of operations executed by memory devices in the case where a refresh command causes refresh of multiple rows of memory. The memory controller can issue a refresh command during active operation of the memory device, which is active operation refresh as opposed to self-refresh when the memory device controls refreshing. The memory controller can then issue a refresh abort during the refresh, and prior to completion of the refresh. The memory controller thus has deterministic control over both the start of refresh as well as when the memory device can be made available for access.
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公开(公告)号:US20150187436A1
公开(公告)日:2015-07-02
申请号:US14320164
申请日:2014-06-30
Applicant: INTEL CORPORATION
Inventor: Bruce QUERBACH , William K. LUI , David G. ELLIS , David J. ZIMMERMAN , Theodore Z. SCHOENBORN , Christopher W. HAMPSON , Ifar WAN , Yulan ZHANG
IPC: G11C29/10 , G06F11/27 , G06F11/263
CPC classification number: G11C29/38 , G06F11/263 , G06F11/27 , G11C11/406 , G11C29/10 , G11C29/1201 , G11C29/16 , G11C29/18 , G11C29/20 , G11C29/36 , G11C29/4401 , G11C29/72 , G11C29/78 , G11C29/783 , G11C2029/1202 , G11C2029/1204 , G11C2029/1206 , G11C2029/1208 , G11C2029/3602 , G11C2029/4402
Abstract: In accordance with the present description, a device includes an internal defect detection and repair circuit which includes a self-test logic circuit built in within the device and a self-repair logic circuit also built in within the device. In one embodiment, the built in self-test logic circuit may be configured to automatically identify defective memory cells in a memory. Upon identifying one or more defective memory cells, the built in self-repair logic circuit may be configured to automatically repair the defective memory cells by replacing defective cells with spare cells within the memory. In one embodiment, data patterns are generated as a function of memory addresses and periodic address offsets. Other aspects are described herein.
Abstract translation: 根据本说明书,装置包括内部缺陷检测和修复电路,其包括内置于装置内的自检逻辑电路和内置在装置内的自修复逻辑电路。 在一个实施例中,内置自检逻辑电路可以被配置为自动识别存储器中的有缺陷的存储器单元。 在识别一个或多个有缺陷的存储器单元时,内置的自修复逻辑电路可以被配置为通过用存储器内的备用单元替换有缺陷的单元来自动修复有缺陷的存储器单元。 在一个实施例中,作为存储器地址和周期性地址偏移的函数产生数据模式。 本文描述了其它方面。
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7.
公开(公告)号:US20190258594A1
公开(公告)日:2019-08-22
申请号:US16283597
申请日:2019-02-22
Applicant: Intel Corporation
Inventor: Bruce QUERBACH , Pete D. VOGT
Abstract: Electronic devices and methods including a printed circuit board configured to accept CPUs and memory modules are described. One apparatus includes a printed circuit board (PCB) that includes a printed circuit board defining a length and a width, the length being greater than the width. The apparatus includes a first row of elements on the PCB, including a first memory region configured to receive at least one memory module. The apparatus includes a second row of elements on the PCB, including a first central processing unit (CPU) socket configured to receive a first CPU, and a second CPU socket configured to receive a second CPU, the first CPU socket and the second CPU socket positioned side by side along the width of the PCB. The apparatus also includes a third row of elements on the PCB, including a second memory region configured to receive a at least one memory module, wherein the second row of elements is positioned between the first row of elements and the third rows of elements. Other embodiments are described and claimed.
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公开(公告)号:US20190042351A1
公开(公告)日:2019-02-07
申请号:US15943594
申请日:2018-04-02
Applicant: Intel Corporation
Inventor: Christopher CONNOR , Bruce QUERBACH
IPC: G06F11/07 , G06F9/4401
Abstract: Examples include techniques for self-healing of a processor in a computing system. A processor semiconductor chip includes one or more processing cores and an embedded non-volatile random-access memory (NVRAM), the NVRAM storing instructions that when executed by the one or more processing cores detect an error causing a core failure, update processor configuration information that reflects the core failure, and cause reset and initialization of the processor using the updated processor configuration information.
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公开(公告)号:US20180190350A1
公开(公告)日:2018-07-05
申请号:US15396251
申请日:2016-12-30
Applicant: INTEL CORPORATION
Inventor: Christopher F. CONNOR , Bruce QUERBACH , Hanmant P. BELGAL
CPC classification number: G11C13/004 , G06F3/0611 , G06F3/0634 , G06F3/0679 , G11C13/0004 , G11C13/0033 , G11C16/26 , G11C16/3418 , G11C2013/0052
Abstract: In one embodiment, a non-volatile memory is controlled in a selectable read mode in response to commands from a processor. Selectable read modes may include a default read memory mode, for example, and a performance read memory mode having a shorter read pulse and a reduced read latency than the default read memory mode, for example. In one embodiment, the performance read memory mode may also have refresh operations at an increased frequency compared to that of the default read mode. Other aspects and advantages are described.
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公开(公告)号:US20190122729A1
公开(公告)日:2019-04-25
申请号:US16231126
申请日:2018-12-21
Applicant: INTEL CORPORATION
Inventor: Christopher F. CONNOR , Bruce QUERBACH , Hanmant P. BELGAL
Abstract: In one embodiment, a non-volatile memory is controlled in a selectable read mode in response to commands from a processor. Selectable read modes may include a default read memory mode, for example, and a performance read memory mode having a shorter read pulse and a reduced read latency than the default read memory mode, for example. In one embodiment, the performance read memory mode may also have refresh operations at an increased frequency compared to that of the default read mode. Other aspects and advantages are described.
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