TRANSISTOR OVER-VOLTAGE PROTECTION
    2.
    发明公开

    公开(公告)号:US20240088887A1

    公开(公告)日:2024-03-14

    申请号:US17993412

    申请日:2022-11-23

    CPC classification number: H03K17/0822 H03K2217/0081

    Abstract: An apparatus comprises a first supply node to provide a first voltage and a second supply node to provide a second voltage lower than the first voltage. First and second transistors, of a first conductivity type, are coupled in series at a first common node, wherein the first transistor is coupled to the first supply node, and the second transistor is coupled to an output node. Third and fourth transistors, of a second conductivity type, coupled in series at a second common node, wherein the fourth transistor is coupled to a third node that is to provide a third voltage, and the third transistor is coupled to the output node. First impedance circuitry is coupled to a gate terminal of the second transistor, the second supply node, and to a gate terminal of the first transistor.

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