公开(公告)号：US09363609B2

公开(公告)日：2016-06-07

申请号：US14044654

申请日：2013-10-02

Applicant: Infineon Technologies AG

Inventor： Wolfgang Friza ,  Thomas Grille ,  Klaus Muemmler ,  Guenter Ziegler ,  Carsten Ahrens

IPC: H01L29/00 ,  H04R23/00 ,  B81C1/00 ,  G01L9/00 ,  H04R19/00 ,  H04R31/00

CPC classification number: H04R23/00 ,  B81B2201/0257 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C1/00047 ,  B81C1/00936 ,  B81C2201/0109 ,  G01L9/0042 ,  H04R19/005 ,  H04R31/006

Abstract: Embodiments show a method for fabricating a cavity structure, a semiconductor structure, a cavity structure for a semiconductor device and a semiconductor microphone fabricated by the same. In some embodiments the method for fabricating a cavity structure comprises providing a first layer, depositing a carbon layer on the first layer, covering at least partially the carbon layer with a second layer to define the cavity structure, removing by means of dry etching the carbon layer between the first and second layer so that the cavity structure is formed.