公开(公告)号：US20240241446A1

公开(公告)日：2024-07-18

申请号：US18620262

申请日：2024-03-28

Applicant: Intel Corporation

Inventor： Marvin Paik ,  Charles H. Wallace ,  Leonard Guler ,  Elliot N. Tan ,  Shengsi Liu ,  Vivek Vishwakarma ,  Izabela Samek ,  Mohammadreza Soleymaniha

IPC: G03F7/20 ,  G03F7/00 ,  H01L21/027

CPC classification number: G03F7/2022 ,  G03F7/2004 ,  G03F7/201 ,  G03F7/70033 ,  G03F7/7005 ,  G03F7/70525 ,  G03F7/7055 ,  G03F7/70725 ,  H01L21/0275

Abstract: Apparatus and methods are disclosed. An example lithography apparatus includes an ultraviolet (UV) source to expose a photoresist layer to UV light; and an extreme ultraviolet (EUV) source coupled to the UV source, the EUV source to expose the photoresist layer to EUV light to via a photomask, a combination of the UV light and the EUV light provide a pattern on the photoresist layer when a developer solution is applied to the photoresist layer.