公开(公告)号：US09664564B2

公开(公告)日：2017-05-30

申请号：US14381742

申请日：2013-02-26

Applicant: KYOTO UNIVERSITY

Inventor： Hiroyuki Yoshida

IPC: G01J3/30 ,  G01J3/443 ,  G01N23/225 ,  G01N21/66 ,  H01J37/06

CPC classification number: G01J3/30 ,  G01J3/443 ,  G01N21/66 ,  G01N23/2251 ,  G01N2223/08 ,  H01J37/06

Abstract: Intensity of near-ultraviolet light or visible light of 180 to 700 nm emitted from a solid sample, such as an organic semiconductor, irradiated with an electron beam is measured, while kinetic energy (accelerating energy) of the electron beam is changed in a range of 0 to 5 eV so as to obtain a spectrum. Peaks are detected from the spectrum, and the energy thereof is defined as unoccupied-states energy of the sample. The onset energy of the first peak represents electronic affinity energy (electron affinity) of the sample. Since the energy of the electron beam irradiated onto the sample is 5 eV or less, almost no damage is exerted on the sample even when the sample is an organic semiconductor.

公开(公告)号：US20150083907A1

公开(公告)日：2015-03-26

申请号：US14381742

申请日：2013-02-26

Applicant: KYOTO UNIVERSITY

Inventor： Hiroyuki Yoshida

IPC: G01J3/30 ,  G01J3/443 ,  H01J37/06

CPC classification number: G01J3/30 ,  G01J3/443 ,  G01N21/66 ,  G01N23/2251 ,  G01N2223/08 ,  H01J37/06

Abstract: Intensity of near-ultraviolet light or visible light of 180 to 700 nm emitted from a solid sample, such as an organic semiconductor, irradiated with an electron beam is measured, while kinetic energy (accelerating energy) of the electron beam is changed in a range of 0 to 5 eV so as to obtain a spectrum. Peaks are detected from the spectrum, and the energy thereof is defined as unoccupied-states energy of the sample. The onset energy of the first peak represents electronic affinity energy (electron affinity) of the sample. Since the energy of the electron beam irradiated onto the sample is 5 eV or less, almost no damage is exerted on the sample even when the sample is an organic semiconductor.

Abstract translation: 测量从用电子束照射的固体样品（例如有机半导体）发射的近紫外光或可见光的180〜700nm的强度，而电子束的动能（加速能）在一定范围内变化 为0〜5eV，得到光谱。 从光谱中检测峰，其能量被定义为样品的空闲状态能量。 第一峰的起始能量表示样品的电子亲和力（电子亲和力）。 由于照射到样品上的电子束的能量为5eV以下，所以即使在样品是有机半导体时也几乎不会对样品施加损伤。