公开(公告)号：US11967486B2

公开(公告)日：2024-04-23

申请号：US17424381

申请日：2020-01-21

Applicant: LAM RESEARCH CORPORATION

Inventor： Andrew Stratton Bravo ,  Chih-Hsun Hsu ,  Serge Kosche ,  Stephen Whitten ,  Shih-Chung Kon ,  Mark Kawaguchi ,  Himanshu Chokshi ,  Dan Zhang ,  Gnanamani Amburose

IPC: H01J37/32

CPC classification number: H01J37/32422 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32467 ,  H01J37/32174

Abstract: A substrate processing system includes an upper chamber and a gas delivery system to supply a gas mixture to the upper chamber. An RF generator generates plasma in the upper chamber. A lower chamber includes a substrate support. A dual ion filter is arranged between the upper chamber and the lower chamber. The dual ion filter includes an upper filter including a first plurality of through holes configured to filter ions. A lower filter includes a second plurality of through holes configured to control plasma uniformity.

公开(公告)号：US09595452B2

公开(公告)日：2017-03-14

申请号：US14723348

申请日：2015-05-27

Applicant: Lam Research Corporation

Inventor： Chih-Hsun Hsu ,  Meihua Shen ,  Thorsten Lill

IPC: H01L21/465

CPC classification number: H01L21/465 ,  H01L21/0206 ,  H01L21/31116

Abstract: A method for selectively etching silicon oxide is provided. A surface reaction phase is provided comprising flowing a surface reaction gas comprising hydrogen, nitrogen and fluorine containing components to form silicon oxide into a compound comprising silicon, hydrogen, nitrogen, and fluorine, forming the surface reaction gas into a plasma, and stopping the flow of the surface reaction gas. The surface is wet treated to remove the compound.

Abstract translation: 提供了选择性地蚀刻氧化硅的方法。 提供了表面反应相，其包括使包含氢，含氮和氟的组分的表面反应气体流动以形成氧化硅到包含硅，氢，氮和氟的化合物中，将表面反应气体形成等离子体，并停止流动 的表面反应气体。 将表面进行湿处理以除去化合物。