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    POLY-SILICON MANUFACTURING APPARATUS AND METHOD USING HIGH-EFFICIENCY HYBRID HORIZONTAL REACTOR
    2.
    发明申请
    POLY-SILICON MANUFACTURING APPARATUS AND METHOD USING HIGH-EFFICIENCY HYBRID HORIZONTAL REACTOR 审中-公开

    公开(公告)号：US20170283266A1

    公开(公告)日：2017-10-05

    申请号：US15508370

    申请日：2015-07-03

    Applicant: LG CHEM, LTD.

    Inventor： Eunsu JANG ,  Yoo Seok KIM ,  Jeong Kyu KIM ,  JinHyoung YOO ,  JungWoo LEE

    IPC: C01B33/03 ,  C01B33/035 ,  B01J12/00

    CPC classification number: C01B33/03 ,  B01J12/005 ,  B01J12/007 ,  C01B33/035

    Abstract: According to the present invention, there is provided a polysilicon production apparatus including: a horizontal reaction tube having an inlet port through which gaseous raw materials including reactant gases and a reducing gas are supplied, an outlet port through which residual gases exit, a reaction surface with which the gaseous raw materials come into contact, and bottom openings through which molten polysilicon produced by the reactions of the gaseous raw materials is discharged; and first heating means adapted to heat the reaction surface of the horizontal reaction tube. The horizontal reaction tube includes reaction regions consisting of first reaction regions where polysilicon is deposited and second reaction regions where reaction by-products are converted to the reactant gases. The first reaction regions are connected in series with the second reaction regions. Also provided is a polysilicon production method using the polysilicon production apparatus.

    DEVICE FOR MANUFACTURING POLYSILICON USING HORIZONTAL REACTOR AND METHOD FOR MANUFACTURING SAME
    3.
    发明申请
    DEVICE FOR MANUFACTURING POLYSILICON USING HORIZONTAL REACTOR AND METHOD FOR MANUFACTURING SAME 审中-公开
    使用水平反应器制造多晶硅的装置及其制造方法

    公开(公告)号：US20170073234A1

    公开(公告)日：2017-03-16

    申请号：US15310716

    申请日：2015-05-11

    Applicant: LG CHEM, LTD.

    Inventor： Eunsu JANG ,  Jeong Kyu KIM ,  Yoo Seok KIM ,  Jin-Hyuoung YOO ,  JungWoo LEE

    IPC: C01B33/029 ,  B01J12/00 ,  B01J19/24 ,  B01J12/02

    CPC classification number: C01B33/029 ,  B01J12/005 ,  B01J12/02 ,  B01J19/00 ,  B01J19/2415 ,  B01J2219/182 ,  C01B33/035

    Abstract: The present invention relates to a polysilicon production apparatus. The apparatus includes: a horizontal reaction tube positioned in an insulated tube and having an inlet port through which gaseous raw materials including silicon-containing reactant gases and a reducing gas are supplied, an outlet port through which residual gases exit, a reaction surface with which the gaseous raw materials come into contact, and a plurality of bottom openings through which molten polysilicon produced by the reactions of the gaseous raw materials is discharged; one or more internal structures placed in the horizontal reaction tube to provide additional reaction surfaces; and first heating means adapted to heat the reaction surface of the horizontal reaction tube. The present invention also relates to a method for the production of polysilicon using the apparatus.

    Abstract translation: 多晶硅制造装置技术领域本发明涉及多晶硅制造装置。 该装置包括：卧式反应管，其设置在绝热管中，并具有入口，通过该入口供给含有硅的反应气体和还原气体的气态原料，残留气体通过该出口流出， 气态原料接触，通过气态原料的反应产生熔融多晶硅的多个底部开口被排出; 一个或多个内部结构放置在水平反应管中以提供附加的反应表面; 以及适于加热水平反应管的反应表面的第一加热装置。 本发明还涉及使用该装置生产多晶硅的方法。

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