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    METHOD OF MARKING A SOLID STATE MATERIAL, AND SOLID STATE MATERIALS MARKED ACCORDING TO SUCH A METHOD
    1.
    发明申请
    METHOD OF MARKING A SOLID STATE MATERIAL, AND SOLID STATE MATERIALS MARKED ACCORDING TO SUCH A METHOD 审中-公开

    公开(公告)号：US20170182838A1

    公开(公告)日：2017-06-29

    申请号：US15304843

    申请日：2015-04-16

    Applicant: Master Dynamic Limited

    Inventor： Yingnan WANG ,  Ching Tom KONG

    IPC: B44C1/22 ,  H01J37/32 ,  G03F7/00

    CPC classification number: B44C1/227 ,  B28D5/00 ,  G03F7/00 ,  G03F7/0002 ,  H01J37/321 ,  H01J37/32192 ,  H01J2237/334

    Abstract: A method of forming a non-optically detectable identifiable mark at an outer surface of an article formed from a solid state material, said method including the steps of forming a plurality of recesses within a predetermined region of a photoresist 5 applied to an outer surface of an article formed from a solid state material, wherein said plurality of recesses is formed by two-photon absorption lithography and wherein said one or more recesses extend at least partially through the photoresist and from an outer surface of the photoresist and towards said outer surface of the article 10 formed from a solid state material; and applying an etching process such that at least a portion of the outer surface of said article is exposed and etched so as to form a plurality of etched portions extending into said article from the outer surface of the article and corresponding to said plurality of recesses; wherein said predetermined region of said photoresist defines an identifiable mark to be applied to the outer 15 surface of said article; wherein said plurality of etched portions forms the nonoptically identifiable mark on the outer surface of said article; and wherein the maximum width of the etched portions of is less than 200 nm such that the identifiable mark is non-optically detectable in the visible light spectrum.

    METHOD OF MANUFACTURE OF MICRO COMPONENTS, AND COMPONENTS FORMED BY SUCH A PROCESS
    4.
    发明申请
    METHOD OF MANUFACTURE OF MICRO COMPONENTS, AND COMPONENTS FORMED BY SUCH A PROCESS 审中-公开
    微量组分的制备方法，以及这些方法形成的组分

    公开(公告)号：US20170043501A1

    公开(公告)日：2017-02-16

    申请号：US15306477

    申请日：2015-04-22

    Applicant: Master Dynamic Limited

    Inventor： Yingnan WANG ,  Jianxing HUANG

    IPC: B28D5/04 ,  C09K13/08 ,  G03F7/40

    CPC classification number: B28D5/04 ,  B81C1/00626 ,  B81C2201/0132 ,  C09K13/08 ,  G03F7/405

    Abstract: A method of forming a multi-level component includes the step of forming at least one arrangement of micro trenches in a predetermined arrangement in a mask material by a lithography process. Another step involves applying one or more etching processes to a surface of a component upon which the mask is applied. The micro trenches have either first or second different aspect ratios. In the applying step, the component is etched by an aspect ratio dependent etch (ARDE) process so as to form an arrangement of micro trenches and micro pillars between adjacent micro trenches. Another step involves removing the arrangement of micro pillars from the component by a removal process. There is also a multi-level component made according to the above method with a first portion at a first level and a further portion of a further level different from the first level.

    Abstract translation: 形成多级部件的方法包括通过光刻工艺在掩模材料中以预定布置形成至少一个微沟槽布置的步骤。 另一步骤包括对施加掩模的部件的表面施加一个或多个蚀刻工艺。 微沟槽具有第一或第二不同的纵横比。 在施加步骤中，通过纵横比依赖蚀刻（ARDE）工艺来蚀刻部件，以便在相邻的微沟槽之间形成微沟槽和微柱的布置。 另一个步骤是通过移除过程从组件中移除微柱的排列。 还有根据上述方法制造的多级组件，其中第一部分处于第一级，而另一部分又与第一级不同。

    METHOD OF MARKING A SOLID-STATE MATERIAL, MARKINGS FORMED FROM SUCH METHODS AND SOLID-STATE MATERIALS MARKED ACCORDING TO SUCH A METHOD
    6.
    发明申请
    METHOD OF MARKING A SOLID-STATE MATERIAL, MARKINGS FORMED FROM SUCH METHODS AND SOLID-STATE MATERIALS MARKED ACCORDING TO SUCH A METHOD 有权

    公开(公告)号：US20210146716A1

    公开(公告)日：2021-05-20

    申请号：US16622606

    申请日：2019-02-22

    Applicant: Master Dynamic Limited

    Inventor： Siu Lung LUI ,  Yingnan WANG ,  Jianxing HUANG

    IPC: B44C1/22 ,  B44B3/00 ,  B41M5/26 ,  A44C17/00 ,  B28D5/00

    Abstract: A method of forming a non-optically detectable identifiable marking invisible to the naked eye is formed from plural recesses of multiple levels at an outer surface of an article formed from a solid-state material. The method includes forming plural recesses of multiple levels within a predetermined region of a photoresist applied to an outer surface of an article formed from a solid-state material. The plural recesses are formed by grayscale lithography and the recesses extend at least partially through the photoresist and towards the outer surface of the article formed from a solid-state material. The method also includes applying an etching process such that at least a portion of the outer surface of said article is exposed and etched to form plural etched portions extending into the article from its outer surface and corresponding to plural recesses; wherein said predetermined region of said photoresist defines an identifiable marking to be applied to the outer surface of said article; wherein said plurality of etched portions forms the non-optically identifiable marking on the outer surface of said article.

    LIGA FABRICATION PROCESS
    7.
    发明申请
    LIGA FABRICATION PROCESS 审中-公开

    公开(公告)号：US20190032233A1

    公开(公告)日：2019-01-31

    申请号：US16080656

    申请日：2017-03-01

    Applicant: Master Dynamic Limited

    Inventor： Yingnan WANG ,  Ching Tom KONG

    IPC: C25D1/00 ,  G03F7/00

    Abstract: A process of forming a three-dimensional micro component includes the step of forming a three-dimensional (3D) geometry contour within a photoresist material using two-photon absorption polymerization. The three-dimensional geometry contour forms a cross-linked polymeric contour defining an outer surface portion of a micro component upon baking of the three-dimensional geometry portion formed in the photoresist. Another step involves applying a UV (ultraviolet) polymerization process so as to cross-link polymeric material of the photoresist adjacent the three-dimensional geometry contour.

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