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公开(公告)号:US20250169201A1
公开(公告)日:2025-05-22
申请号:US19030278
申请日:2025-01-17
Applicant: Maxeon Solar Pte. Ltd.
Inventor: DAVID D. SMITH , JEFFREY EL COTTER , DAVID AARON RANDOLPH BARKHOUSE , TAESEOK KIM
IPC: H10F19/80 , H10F10/174 , H10F71/00 , H10F77/20
Abstract: A solar cell, and methods of fabricating said solar cell, are disclosed. The solar cell can include a first emitter region over a substrate, the first emitter region having a perimeter around a portion of the substrate. A first conductive contact is electrically coupled to the first emitter region at a location outside of the perimeter of the first emitter region.
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公开(公告)号:US20240313142A1
公开(公告)日:2024-09-19
申请号:US18222292
申请日:2023-07-14
Applicant: Maxeon Solar Pte. Ltd.
Inventor: RICHARD HAMILTON SEWELL , DAVID AARON RANDOLPH BARKHOUSE , DOUGLAS ROSE , LEWIS ABRA
CPC classification number: H01L31/0516 , H01L31/02013 , H01L31/0508 , H01L31/188
Abstract: Wire-based metallization and stringing techniques for solar cells, and the resulting solar cells, modules, and equipment, are described. In an example, a substrate has a surface. A plurality of N-type and P-type semiconductor regions is disposed in or above the surface of the substrate. A conductive contact structure is disposed on the plurality of N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of conductive wires, each conductive wire of the plurality of conductive wires essentially continuously bonded directly to a corresponding one of the N-type and P-type semiconductor regions.
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公开(公告)号:US20240379884A1
公开(公告)日:2024-11-14
申请号:US18783283
申请日:2024-07-24
Applicant: Maxeon Solar Pte. Ltd.
Inventor: RICHARD HAMILTON SEWELL , DAVID AARON RANDOLPH BARKHOUSE , JUNBO WU , MICHAEL CUDZINOVIC , PAUL LOSCUTOFF , JOSEPH BEHNKE , MICHEL ARSÈNE OLIVIER NGAMO TOKO
IPC: H01L31/0224 , H01L31/02 , H01L31/068 , H01L31/0745
Abstract: Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a barrier layer on a semiconductor region disposed in or above a substrate. The semiconductor region includes monocrystalline or polycrystalline silicon. The method also involves forming a conductive paste layer on the barrier layer. The method also involves forming a conductive layer from the conductive paste layer. The method also involves forming a contact structure for the semiconductor region of the solar cell, the contact structure including at least the conductive layer.
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