公开(公告)号：US20240313142A1

公开(公告)日：2024-09-19

申请号：US18222292

申请日：2023-07-14

Applicant: Maxeon Solar Pte. Ltd.

Inventor： RICHARD HAMILTON SEWELL ,  DAVID AARON RANDOLPH BARKHOUSE ,  DOUGLAS ROSE ,  LEWIS ABRA

IPC: H01L31/05 ,  H01L31/02 ,  H01L31/18

CPC classification number: H01L31/0516 ,  H01L31/02013 ,  H01L31/0508 ,  H01L31/188

Abstract: Wire-based metallization and stringing techniques for solar cells, and the resulting solar cells, modules, and equipment, are described. In an example, a substrate has a surface. A plurality of N-type and P-type semiconductor regions is disposed in or above the surface of the substrate. A conductive contact structure is disposed on the plurality of N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of conductive wires, each conductive wire of the plurality of conductive wires essentially continuously bonded directly to a corresponding one of the N-type and P-type semiconductor regions.

公开(公告)号：US20240088317A1

公开(公告)日：2024-03-14

申请号：US18513256

申请日：2023-11-17

Applicant: Maxeon Solar Pte. Ltd.

Inventor： RICHARD HAMILTON SEWELL ,  DAVID FREDRIC JOEL KAVULAK ,  LEWIS ABRA ,  THOMAS P. PASS ,  TAESEOK KIM ,  MATTHIEU MOORS ,  BENJAMIN IAN HSIA ,  GABRIEL HARLEY

IPC: H01L31/05 ,  H01L31/0224 ,  H01L31/068

CPC classification number: H01L31/0516 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/05 ,  H01L31/0504 ,  H01L31/0508 ,  H01L31/0682 ,  Y02E10/50 ,  Y02E10/546 ,  Y02E10/547

Abstract: Approaches for fabricating one-dimensional metallization for solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate and parallel along a first direction to form a one-dimensional layout of emitter regions for the solar cell. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal lines corresponding to the plurality of alternating N-type and P-type semiconductor regions. The plurality of metal lines is parallel along the first direction to form a one-dimensional layout of a metallization layer for the solar cell.