公开(公告)号：US20230304857A1

公开(公告)日：2023-09-28

申请号：US18011394

申请日：2021-04-07

Applicant: NANJING UNIVERSITY

Inventor： Labao ZHANG ,  Rui YIN ,  Biao ZHANG ,  Qi CHEN ,  Jiayu LV ,  Rui GE ,  Lin KANG ,  Peiheng WU

IPC: G01J1/44 ,  H10N60/83

CPC classification number: G01J1/44 ,  H10N60/83 ,  G01J2001/442 ,  G01J2001/4446 ,  G01J2001/444

Abstract: The present invention discloses a design for reducing a dark count rate of a superconducting nanowire single photon detector (SNSPD) based on a two-wire structure, which includes: intertwining two niobium nitride nanowires that are not crossed to form an SNSPD of a two-wire structure; regulating and controlling behaviors of one nanowire by adopting the other nanowire, and regulating bias current to be close to superconducting critical current; introducing an optical signal into a photosensitive area of the detector by adopting an optical fiber; outputting two channels of signals respectively through the two nanowires to make the dark count rates of the two nanowires mutually excited; and through a voltage comparator and an exclusive-OR gate, reducing a dark count rate signal, and retaining a photon response signal. The generation of the dark count rate of the detector can be inhibited effectively by the unique performance of the SNSPD of the two-wire structure; and by improving the process latter, the coupling efficiency of the dark count rate of the SNSPD is further improved, which is expected to completely inhibit the dark count rate of the SNSPD system and greatly increase the signal-to-noise ratio of the detector.

公开(公告)号：US20220267889A1

公开(公告)日：2022-08-25

申请号：US17596204

申请日：2020-10-26

Applicant: NANJING UNIVERSITY

Inventor： Xuecou TU ,  Mengxin LIU ,  Lin KANG ,  Labao ZHANG ,  Xiaoqing JIA ,  Qingyuan ZHAO ,  Jian CHEN ,  Peiheng WU

IPC: C23C14/16 ,  C23C14/30 ,  C23C14/02 ,  C23C14/58

Abstract: A fabrication method of a silicon nanoneedle array with ultra-high aspect ratio includes the following steps: spin-coating two photoresist layers of methyl methacrylate (MMA) and polymethyl methacrylate (PMMA) A2 on a silicon substrate; subjecting the silicon substrate coated with the two photoresist layers of MMA and PMMA A2 to electron beam lithography to form a photoresist pattern on the silicon substrate; subjecting the silicon substrate on which the photoresist pattern is formed to electron beam evaporation (EBE) to deposit an Al film layer on the silicon substrate; subjecting the silicon substrate on which the Al film layer is deposited to stripping to obtain an Al film array deposited on the silicon substrate, which provides a mask for the subsequent inductively coupled plasma (ICP) etching process; and subjecting the silicon substrate covered with the Al mask to ICP silicon etching to obtain a silicon nanoneedle array structure.