公开(公告)号：US09069253B2

公开(公告)日：2015-06-30

申请号：US13801945

申请日：2013-03-13

Applicant: Nanya Technology Corp.

Inventor： Yu-Mei Ni ,  Chun-Yen Huang ,  Pei-Cheng Fan

IPC: G03F1/22 ,  G03F1/24

CPC classification number: G03F1/22 ,  G03F1/24

Abstract: A mask structure, including a substrate; an absorber layer formed on the substrate; and a patterned reflection layer formed on the absorber layer. Optionally, the mask structure may further include a buffer layer, a conductive coating, or combinations thereof. The buffer layer may be formed between the absorber layer and the reflection layer, and the conductive coating may be formed at a back side of the substrate.

Abstract translation: 一种掩模结构，包括基底; 形成在所述基板上的吸收体层; 以及形成在吸收体层上的图案化反射层。 任选地，掩模结构还可以包括缓冲层，导电涂层或其组合。 缓冲层可以形成在吸收层和反射层之间，并且导电涂层可以形成在衬底的背面。

公开(公告)号：US20140272674A1

公开(公告)日：2014-09-18

申请号：US13801945

申请日：2013-03-13

Applicant: NANYA TECHNOLOGY CORP.

Inventor： Yu-Mei Ni ,  Chun-Yen Huang ,  Pei-Cheng Fan

IPC: G03F1/22

CPC classification number: G03F1/22 ,  G03F1/24

Abstract: A mask structure, including a substrate; an absorber layer formed on the substrate; and a patterned reflection layer formed on the absorber layer. Optionally, the mask structure may further include a buffer layer, a conductive coating, or combinations thereof. The buffer layer may be formed between the absorber layer and the reflection layer, and the conductive coating may be formed at a back side of the substrate.

Abstract translation: 一种掩模结构，包括基底; 形成在所述基板上的吸收体层; 以及形成在吸收体层上的图案化反射层。 任选地，掩模结构还可以包括缓冲层，导电涂层或其组合。 缓冲层可以形成在吸收层和反射层之间，并且导电涂层可以形成在衬底的背面。