-
公开(公告)号:US20190341267A1
公开(公告)日:2019-11-07
申请号:US16511396
申请日:2019-07-15
Applicant: NATIONAL SUN YAT-SEN UNIVERSITY
Inventor: Ting-Chang Chang , Kuan-Chang Chang , Chih-Cheng Shih , Chih-Hung Pan
IPC: H01L21/322 , H01L21/26
Abstract: A method for reducing defects of an electronic component using a supercritical fluid includes recrystallizing and rearranging grains in the electronic component by introducing the supercritical fluid doped with H2S together with an electromagnetic wave into a cavity. The cavity has a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.
-
2.
公开(公告)号:US20180227997A1
公开(公告)日:2018-08-09
申请号:US15597238
申请日:2017-05-17
Applicant: NATIONAL SUN YAT-SEN UNIVERSITY
Inventor: Ting-Chang Chang , Kuan-Chang Chang , Tsung-Ming Tsai , Chih-Cheng Shih , Bo-Wei Chen , Chung-I Yang
IPC: H05B33/08
CPC classification number: H05B33/0854 , H01L33/62
Abstract: A method for increasing the luminous intensity of an ultraviolet light emitting diode includes heating an ultraviolet light emitting diode to a working temperature, and supplying electricity to the ultraviolet light emitting diode at the working temperature to make the ultraviolet light emitting diode emit ultraviolet light. An apparatus for increasing the luminous intensity of an ultraviolet light emitting diode includes a substrate, an ultraviolet light emitting diode mounted on the substrate, an electric heater mounted on the substrate, a temperature sensor, and a controller electrically connected to the ultraviolet light emitting diode, the electric heater, and the temperature sensor. The controller can heat the ultraviolet light emitting diode through the substrate. When the temperature sensor detects that the temperature of the ultraviolet light emitting diode reaches a working temperature, the controller supplies electricity to the ultraviolet light emitting diode to make the ultraviolet light emitting diode emit ultraviolet light.
-
公开(公告)号:US20170317281A1
公开(公告)日:2017-11-02
申请号:US15213583
申请日:2016-07-19
Applicant: NATIONAL SUN YAT-SEN UNIVERSITY
Inventor: Ting-Chang Chang , Kuan-Chang Chang , Tsung-Ming Tsai , Chih-Cheng Shih , Chih-Hung Pan
IPC: H01L45/00
Abstract: A resistive random access memory overcomes the low durability of the conventional resistive random access memory. The resistive random access memory includes a first electrode, a second electrode, an enclosing layer and an oxygen-containing resistance changing layer. The first and second electrodes are separate from each other. The enclosing layer forms a first via-hole. The oxygen-containing resistance changing layer is arranged for the first via-hole. The first and second electrodes and the enclosing layer jointly enclose the oxygen-containing resistance changing layer. Each of the first electrode, the second electrode and the enclosing layer is made of an element not containing oxygen.
-
4.
公开(公告)号:US20190291401A1
公开(公告)日:2019-09-26
申请号:US16016802
申请日:2018-06-25
Applicant: NATIONAL SUN YAT-SEN UNIVERSITY
Inventor: Ting-Chang Chang , Chih-Cheng Shih , Ming-Hui Wang , Wen-Chung Chen , Chih-Yang Lin
Abstract: A method for bonding a first component to a second component includes placing the first and second components in a cavity. Each of the first and second components has a bonding portion, and the bonding portion of the first component faces the bonding portion of the second component. A supercritical fluid is then introduced into the cavity with a temperature of 40-400° C. and a pressure of 1,500-100,000 psi, and a pressure of 4-100,000 psi is applied on both the first and second components, assuring the bonding portion of the first component bond to the bonding portion of the second component. Moreover, a method for separating a first component from a second component includes placing a composite in a cavity. The composite includes the first component, the second component and a connecting layer by which the first component joins to the second component. The supercritical is then introduced into the cavity.
-
5.
公开(公告)号:US20170341050A1
公开(公告)日:2017-11-30
申请号:US15291577
申请日:2016-10-12
Applicant: NATIONAL SUN YAT-SEN UNIVERSITY
Inventor: Ting-Chang Chang , Kuan-Chang Chang , Tsung-Ming Tsai , Chih-Cheng Shih , Chih-Hung Pan
IPC: B01J19/00 , C07D473/12 , B01J3/00 , H01L45/00
CPC classification number: B01J19/0006 , B01J3/008 , B01J2219/00164 , B01J2219/00186 , B01J2219/00198 , B01J2219/00213 , B01J2219/00231 , B01J2219/0024 , C07D473/12 , H01L45/1641 , Y02P20/544
Abstract: The present disclosure provides a reaction method with homogeneous-phase supercritical fluid, including: preparing a supercritical fluid and a solute; supplying the supercritical fluid and the solute into a molecular sieve component to uniformly mix the supercritical fluid and the solute in the molecular sieve component, forming a homogeneous-phase supercritical fluid; and supplying the homogeneous-phase supercritical fluid into a reaction chamber for conducting a reaction. The present disclosure further provides an apparatus for homogeneous-phase supercritical fluid reaction, which can be utilized with the reaction method with homogeneous-phase supercritical fluid
-
公开(公告)号:US20170117465A1
公开(公告)日:2017-04-27
申请号:US14957658
申请日:2015-12-03
Applicant: NATIONAL SUN YAT-SEN UNIVERSITY
Inventor: Ting-Chang Chang , Kuan-Chang Chang , Tsung-Ming Tsai , Chih-Cheng Shih , Chih-Hung Pan
IPC: H01L45/00
CPC classification number: H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/1253 , H01L45/146
Abstract: A resistive random access memory does not encounter the undesired effects caused by sneak current which occurs when a conventional resistive random access memory operates in an integrated circuit. The resistive random access memory includes a first electrode layer, a first insulating layer, an oxygen-containing layer, a second insulating layer and a second electrode layer. The first insulating layer is arranged on the first electrode layer. The oxygen-containing layer is arranged on the first insulating layer and includes an oxide doped with a metal element. The metal element does not exceed 10% of the oxygen-containing layer. The second insulating layer is arranged on the oxygen-containing layer, and the second electrode layer is arranged on the second insulating layer. In this arrangement, the undesired effects caused by sneak current can be effectively eliminated.
-
公开(公告)号:US10461252B2
公开(公告)日:2019-10-29
申请号:US15213583
申请日:2016-07-19
Applicant: NATIONAL SUN YAT-SEN UNIVERSITY
Inventor: Ting-Chang Chang , Kuan-Chang Chang , Tsung-Ming Tsai , Chih-Cheng Shih , Chih-Hung Pan
Abstract: A resistive random access memory overcomes the low durability of the conventional resistive random access memory. The resistive random access memory includes a first electrode, a second electrode, an enclosing layer and an oxygen-containing resistance changing layer. The first and second electrodes are separate from each other. The enclosing layer forms a first via-hole. The oxygen-containing resistance changing layer is arranged for the first via-hole. The first and second electrodes and the enclosing layer jointly enclose the oxygen-containing resistance changing layer. Each of the first electrode, the second electrode and the enclosing layer is made of an element not containing oxygen.
-
公开(公告)号:US20190009239A1
公开(公告)日:2019-01-10
申请号:US16128802
申请日:2018-09-12
Applicant: NATIONAL SUN YAT-SEN UNIVERSITY
Inventor: Ting-Chang Chang , Chih-Yang Lin , Tsung-Ming Tsai , Chih-Cheng Shih , Ming-Hui Wang
CPC classification number: B01J19/0006 , B01F3/0092 , B01F2003/0064 , B01J3/008 , B01J2219/00051 , B01J2219/00162 , B01J2219/00164 , B01J2219/00186
Abstract: A reaction method with a homogeneous-phase supercritical fluid includes introducing a first fluid into a mixing chamber. A mass is less than or equal to that can be absorbed by the molecular sieve component, totally absorbing the first fluid by the molecular sieve component. A second fluid is introduced into the mixing chamber with a mass being greater than that can be absorbed by the molecular sieve component. A temperature and a pressure in the mixing chamber are adjusted to a critical temperature and a critical pressure of the second fluid, respectively, releasing the first fluid in supercritical phase from the molecular sieve component into the mixing chamber, followed by homogeneously mixing with the second fluid in supercritical phase in the mixing chamber to obtain a homogeneous-phase mixing fluid. The homogeneous-phase mixing fluid is then introduced into a reaction chamber connected to the mixing chamber.
-
9.
公开(公告)号:US10045414B1
公开(公告)日:2018-08-07
申请号:US15597238
申请日:2017-05-17
Applicant: NATIONAL SUN YAT-SEN UNIVERSITY
Inventor: Ting-Chang Chang , Kuan-Chang Chang , Tsung-Ming Tsai , Chih-Cheng Shih , Bo-Wei Chen , Chung-I Yang
Abstract: A method for increasing the luminous intensity of an ultraviolet light emitting diode includes heating an ultraviolet light emitting diode to a working temperature, and supplying electricity to the ultraviolet light emitting diode at the working temperature to make the ultraviolet light emitting diode emit ultraviolet light. An apparatus for increasing the luminous intensity of an ultraviolet light emitting diode includes a substrate, an ultraviolet light emitting diode mounted on the substrate, an electric heater mounted on the substrate, a temperature sensor, and a controller electrically connected to the ultraviolet light emitting diode, the electric heater, and the temperature sensor. The controller can heat the ultraviolet light emitting diode through the substrate. When the temperature sensor detects that the temperature of the ultraviolet light emitting diode reaches a working temperature, the controller supplies electricity to the ultraviolet light emitting diode to make the ultraviolet light emitting diode emit ultraviolet light.
-
公开(公告)号:US11191873B2
公开(公告)日:2021-12-07
申请号:US15819660
申请日:2017-11-21
Applicant: NATIONAL SUN YAT-SEN UNIVERSITY
Inventor: Ting-Chang Chang , Kuan-Chang Chang , Chih-Cheng Shih , Chih-Hung Pan , Chih-Yang Lin
IPC: A61L24/00 , A61L27/30 , A61L15/18 , A61L24/02 , A61L31/08 , A61L17/14 , A61L31/14 , A61L15/42 , A61L27/50 , A61L29/14
Abstract: A method for processing a biomedical material using a supercritical fluid includes introducing the supercritical fluid into a cavity. The supercritical fluid is doped with a hydrogen isotope-labeled compound, an organic metal compound, an element selecting from a halogen element, oxygen, sulfur, selenium, phosphorus or arsenic, or a compound containing the element. The biomedical material in the cavity is modified by the supercritical fluid at a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.
-
-
-
-
-
-
-
-
-