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    Resistive Random Access Memory
    1.
    发明申请
    Resistive Random Access Memory 审中-公开

    公开(公告)号：US20170317281A1

    公开(公告)日：2017-11-02

    申请号：US15213583

    申请日：2016-07-19

    Applicant: NATIONAL SUN YAT-SEN UNIVERSITY

    Inventor： Ting-Chang Chang ,  Kuan-Chang Chang ,  Tsung-Ming Tsai ,  Chih-Cheng Shih ,  Chih-Hung Pan

    IPC: H01L45/00

    Abstract: A resistive random access memory overcomes the low durability of the conventional resistive random access memory. The resistive random access memory includes a first electrode, a second electrode, an enclosing layer and an oxygen-containing resistance changing layer. The first and second electrodes are separate from each other. The enclosing layer forms a first via-hole. The oxygen-containing resistance changing layer is arranged for the first via-hole. The first and second electrodes and the enclosing layer jointly enclose the oxygen-containing resistance changing layer. Each of the first electrode, the second electrode and the enclosing layer is made of an element not containing oxygen.

    Resistive random access memory having stable forming voltage
    2.
    发明授权
    Resistive random access memory having stable forming voltage 有权

    公开(公告)号：US09711720B2

    公开(公告)日：2017-07-18

    申请号：US14734809

    申请日：2015-06-09

    Applicant: NATIONAL SUN YAT-SEN UNIVERSITY

    Inventor： Ting-Chang Chang ,  Kuan-Chang Chang ,  Tsung-Ming Tsai ,  Tian-Jian Chu ,  Chih-Hung Pan

    IPC: H01L45/00

    CPC classification number: H01L45/1253 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146

    Abstract: A resistive random access memory including a first electrode, a separating medium, a resistance changing layer and a second electrode is disclosed. The first electrode has a mounting face. The separating medium is arranged on the first electrode and forms a through hole. A part of the first electrode is not covered by the separating medium. The separating medium has a first dielectric. The resistance changing layer extends along the part of the first electrode as well as along an inner face and the second face of the separating medium. The resistance changing layer has a second dielectric having a dielectric constant larger than a dielectric constant of the first dielectric by 2 or less. The second electrode is arranged on the resistance changing layer. In this arrangement, the problem of unstable forming voltage of the conventional resistive random access memory can be solved.

    Resistive random access memory device with reduced power consumption
    4.
    发明授权
    Resistive random access memory device with reduced power consumption 有权

    公开(公告)号：US09853214B2

    公开(公告)日：2017-12-26

    申请号：US15393983

    申请日：2016-12-29

    Applicant: NATIONAL SUN YAT-SEN UNIVERSITY

    Inventor： Ting-Chang Chang ,  Kuan-Chang Chang ,  Tsung-Ming Tsai ,  Tian-Jian Chu ,  Chih-Hung Pan

    IPC: H01L45/00

    CPC classification number: H01L45/1253 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146

    Abstract: A resistive random access memory includes a first electrode, a separating medium, a resistance changing layer and a second electrode. The first electrode has a mounting face. The separating medium has a first face in contact with the mounting face, a second face opposite to the first face, and an inner face extending between the first and second faces. The separating medium forms a through hole extending from the first to second face. A part of the mounting face is not covered by the separating medium. The separating medium has a first dielectric. The resistance changing layer extends along the part of the mounting face as well as the inner and second faces. The resistance changing layer has a second dielectric having a dielectric constant larger than a dielectric constant of the first dielectric by 2 or less. The second electrode is arranged on the resistance changing layer.

    Resistive random access memory
    6.
    发明授权
    Resistive random access memory 有权

    公开(公告)号：US10461252B2

    公开(公告)日：2019-10-29

    申请号：US15213583

    申请日：2016-07-19

    Applicant: NATIONAL SUN YAT-SEN UNIVERSITY

    Inventor： Ting-Chang Chang ,  Kuan-Chang Chang ,  Tsung-Ming Tsai ,  Chih-Cheng Shih ,  Chih-Hung Pan

    IPC: H01L27/24 ,  H01L45/00

    Abstract: A resistive random access memory overcomes the low durability of the conventional resistive random access memory. The resistive random access memory includes a first electrode, a second electrode, an enclosing layer and an oxygen-containing resistance changing layer. The first and second electrodes are separate from each other. The enclosing layer forms a first via-hole. The oxygen-containing resistance changing layer is arranged for the first via-hole. The first and second electrodes and the enclosing layer jointly enclose the oxygen-containing resistance changing layer. Each of the first electrode, the second electrode and the enclosing layer is made of an element not containing oxygen.

    RESISTIVE RANDOM ACCESS MEMORY
    9.
    发明申请
    RESISTIVE RANDOM ACCESS MEMORY 审中-公开

    公开(公告)号：US20170110658A1

    公开(公告)日：2017-04-20

    申请号：US15393983

    申请日：2016-12-29

    Applicant: NATIONAL SUN YAT-SEN UNIVERSITY

    Inventor： Ting-Chang Chang ,  Kuan-Chang Chang ,  Tsung-Ming Tsai ,  Tian-Jian Chu ,  Chih-Hung Pan

    IPC: H01L45/00

    CPC classification number: H01L45/1253 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146

    Abstract: A resistive random access memory includes a first electrode, a separating medium, a resistance changing layer and a second electrode. The first electrode has a mounting face. The separating medium has a first face in contact with the mounting face, a second face opposite to the first face, and an inner face extending between the first and second faces. The separating medium forms a through hole extending from the first to second face. A part of the mounting face is not covered by the separating medium. The separating medium has a first dielectric. The resistance changing layer extends along the part of the mounting face as well as the inner and second faces. The resistance changing layer has a second dielectric having a dielectric constant larger than a dielectric constant of the first dielectric by 2 or less. The second electrode is arranged on the resistance changing layer.

    Resistive random access memory and method for producing same
    10.
    发明授权
    Resistive random access memory and method for producing same 有权
    电阻随机存取存储器及其制造方法

    公开(公告)号：US09287501B1

    公开(公告)日：2016-03-15

    申请号：US14573905

    申请日：2014-12-17

    Applicant: NATIONAL SUN YAT-SEN UNIVERSITY

    Inventor： Ting-Chang Chang ,  Kuan-Chang Chang ,  Tsung-Ming Tsai ,  Chih-Hung Pan

    IPC: H01L29/10 ,  H01L45/00

    CPC classification number: H01L45/146 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/1625

    Abstract: A resistive random access memory includes an oxygen-poor layer disposed on a first electrode layer and formed by indium tin oxide, indium oxide, tin dioxide, or zinc oxide. An insulating layer is disposed on the oxygen-poor layer and is formed by silicon dioxide or hafnium oxide. A second electrode layer is disposed on the insulating layer. A method for producing a resistive random access memory includes preparing a first electrode layer. An oxygen-poor layer is then formed on the first electrode layer. The oxygen-poor layer is formed by indium tin oxide, indium oxide, tin dioxide, or zinc oxide. Next, an insulating layer is formed on the oxygen-poor layer. The insulating layer formed by silicon dioxide or hafnium oxide. A second electrode layer is then formed on the insulating layer.

    Abstract translation: 电阻随机存取存储器包括设置在第一电极层上并由氧化铟锡，氧化铟，二氧化锡或氧化锌形成的贫氧层。 绝缘层设置在无氧层上并由二氧化硅或氧化铪形成。 第二电极层设置在绝缘层上。 一种制造电阻随机存取存储器的方法包括制备第一电极层。 然后在第一电极层上形成贫氧层。 氧不良层由氧化铟锡，氧化铟，二氧化锡或氧化锌形成。 接下来，在不透氧层上形成绝缘层。 由二氧化硅或氧化铪形成的绝缘层。 然后在绝缘层上形成第二电极层。

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