公开(公告)号：US09346669B2

公开(公告)日：2016-05-24

申请号：US14719187

申请日：2015-05-21

Applicant: Newport Fab

Inventor： David J. Howard ,  Michael J. DeBar ,  Jeff Rose ,  Arjun Kar-Roy

IPC: H01L23/482 ,  B81C1/00 ,  B81B7/00 ,  H01L21/768 ,  B81B3/00 ,  H01L29/417 ,  H01L21/4763

CPC classification number: B81C1/00095 ,  B81B3/007 ,  B81B7/0006 ,  B81B2201/0207 ,  B81B2203/0361 ,  B81C1/00111 ,  B81C1/00166 ,  B81C1/00658 ,  H01L21/47635 ,  H01L21/76883 ,  H01L29/0676 ,  H01L29/417

Abstract: Self-supported MEMS structure and method for its formation are disclosed. An exemplary method includes forming a polymer layer over a MEMS plate over a substrate, forming a via collar along sidewalls of a first portion of a trench over the polymer layer, and forming a second portion of the trench within the polymer layer. The method also includes forming an oxide liner in the trench lining sidewalls of the via collar and sidewalls of the second portion of the trench, depositing a metallic filler in the trench to form a via, and forming a metal cap layer over the via collar and the metallic filler. The method further includes removing a portion of the metal cap layer to form a via cap, and removing the polymer layer such that the via is supported only on a bottom thereof by the substrate. An exemplary structure formed by the disclosed method is also disclosed.

Abstract translation: 公开了自支撑MEMS结构及其形成方法。 一种示例性方法包括在衬底上方的MEMS板上形成聚合物层，在聚合物层上形成沿沟槽第一部分的侧壁的通孔环，以及在聚合物层内形成沟槽的第二部分。 该方法还包括在通孔环的沟槽衬里和沟槽的第二部分的侧壁的沟槽衬里中形成氧化物衬垫，在沟槽中沉积金属填料以形成通孔，并在通孔环上形成金属盖层， 金属填料。 该方法还包括去除金属盖层的一部分以形成通孔盖，以及去除聚合物层，使得通孔仅由基底在其底部支撑。 还公开了通过公开的方法形成的示例性结构。

公开(公告)号：US20150368094A1

公开(公告)日：2015-12-24

申请号：US14719187

申请日：2015-05-21

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： David J. Howard ,  Michael J. DeBar ,  Jeff Rose ,  Arjun Kar-Roy

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00095 ,  B81B3/007 ,  B81B7/0006 ,  B81B2201/0207 ,  B81B2203/0361 ,  B81C1/00111 ,  B81C1/00166 ,  B81C1/00658 ,  H01L21/47635 ,  H01L21/76883 ,  H01L29/0676 ,  H01L29/417

Abstract: Self-supported MEMS structure and method for its formation are disclosed. An exemplary method includes forming a polymer layer over a MEMS plate over a substrate, forming a via collar along sidewalls of a first portion of a trench over the polymer layer, and forming a second portion of the trench within the polymer layer. The method also includes forming an oxide liner in the trench lining sidewalls of the via collar and sidewalls of the second portion of the trench, depositing a metallic filler in the trench to form a via, and forming a metal cap layer over the via collar and the metallic filler. The method further includes removing a portion of the metal cap layer to form a via cap, and removing the polymer layer such that the via is supported only on a bottom thereof by the substrate. An exemplary structure formed by the disclosed method is also disclosed.

Abstract translation: 公开了自支撑MEMS结构及其形成方法。 一种示例性方法包括在衬底上方的MEMS板上形成聚合物层，在聚合物层上形成沿沟槽第一部分的侧壁的通孔环，以及在聚合物层内形成沟槽的第二部分。 该方法还包括在通孔环的沟槽衬里和沟槽的第二部分的侧壁的沟槽衬里中形成氧化物衬垫，在沟槽中沉积金属填料以形成通孔，并在通孔环上形成金属盖层， 金属填料。 该方法还包括去除金属盖层的一部分以形成通孔盖，以及去除聚合物层，使得通孔仅由基底在其底部支撑。 还公开了通过公开的方法形成的示例性结构。

公开(公告)号：US09481568B2

公开(公告)日：2016-11-01

申请号：US14695494

申请日：2015-04-24

Applicant: Newport Fab, LLC

Inventor： Michael J. DeBar ,  David J. Howard ,  Jeff Rose

IPC: H01L27/11 ,  B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00246 ,  B81B2207/015 ,  B81C1/00833 ,  B81C2203/0771

Abstract: Integration of active devices with passive components and MEMS devices is disclosed. An integrated semiconductor structure includes an active device having a device top electrode connected to a conductive jumper by a device-side via/interconnect metal stack. The integrated semiconductor structure also includes a passive component having a component bottom plate connected to the conductive jumper by a component-side via/interconnect metal stack. The component bottom plate is situated at an intermediate metal level higher than the device top electrode, and the conductive jumper is situated at a connecting metal level higher than the component bottom plate. The conductive jumper reduces undesirable charge flow into the active device during fabrication of the passive component. The passive component can be, for example, a MEMS device.

Abstract translation: 公开了有源器件与无源器件和MEMS器件的集成。 集成半导体结构包括具有通过器件侧通孔/互连金属叠层连接到导电跳线的器件顶部电极的有源器件。 集成半导体结构还包括具有通过组件侧通孔/互连金属堆叠连接到导电跳线的部件底板的无源部件。 部件底板位于高于器件顶部电极的中间金属水平处，并且导电跳线位于高于部件底板的连接金属水平处。 导电跳线在制造无源部件期间减少不期望的充电流入有源器件。 无源部件可以是例如MEMS器件。

公开(公告)号：US20160289065A1

公开(公告)日：2016-10-06

申请号：US14695494

申请日：2015-04-24

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： Michael J. DeBar ,  David J. Howard ,  Jeff Rose

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00246 ,  B81B2207/015 ,  B81C1/00833 ,  B81C2203/0771

Abstract: Integration of active devices with passive components and MEMS devices is disclosed. An integrated semiconductor structure includes an active device having a device top electrode connected to a conductive jumper by a device-side via/interconnect metal stack. The integrated semiconductor structure also includes a passive component having a component bottom plate connected to the conductive jumper by a component-side via/interconnect metal stack. The component bottom plate is situated at an intermediate metal level higher than the device top electrode, and the conductive jumper is situated at a connecting metal level higher than the component bottom plate. The conductive jumper reduces undesirable charge flow into the active device during fabrication of the passive component. The passive component can be, for example, a MEMS device.

Abstract translation: 公开了有源器件与无源器件和MEMS器件的集成。 集成半导体结构包括具有通过器件侧通孔/互连金属叠层连接到导电跳线的器件顶部电极的有源器件。 集成半导体结构还包括具有通过组件侧通孔/互连金属堆叠连接到导电跳线的部件底板的无源部件。 部件底板位于高于器件顶部电极的中间金属水平处，并且导电跳线位于高于部件底板的连接金属水平处。 导电跳线在制造无源部件期间减少不期望的充电流入有源器件。 无源部件可以是例如MEMS器件。

公开(公告)号：US09751753B2

公开(公告)日：2017-09-05

申请号：US15256340

申请日：2016-09-02

Applicant: Newport Fab, LLC

Inventor： Michael J. DeBar ,  David J. Howard ,  Jeff Rose

IPC: B81C1/00

CPC classification number: B81C1/00246 ,  B81B2207/015 ,  B81C1/00833 ,  B81C2203/0771

Abstract: Integration of active devices with passive components and MEMS devices is disclosed. An integrated semiconductor structure includes an active device having a device top electrode connected to a conductive jumper by a device-side via/interconnect metal stack. The integrated semiconductor structure also includes a passive component having a component bottom plate connected to the conductive jumper by a component side via/interconnect metal stack. The component bottom plate is situated at an intermediate metal level higher than the device top electrode, and the conductive jumper is situated at a connecting metal level higher than the component bottom plate. The conductive jumper reduces undesirable charge flow into the active device during fabrication of the passive component. The passive component can be, for example, a MEMS device.

公开(公告)号：US20160368764A1

公开(公告)日：2016-12-22

申请号：US15256340

申请日：2016-09-02

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： Michael J. DeBar ,  David J. Howard ,  Jeff Rose

IPC: B81C1/00

CPC classification number: B81C1/00246 ,  B81B2207/015 ,  B81C1/00833 ,  B81C2203/0771

Abstract: Integration of active devices with passive components and MEMS devices is disclosed. An integrated semiconductor structure includes an active device having a device top electrode connected to a conductive jumper by a device-side via/interconnect metal stack. The integrated semiconductor structure also includes a passive component having a component bottom plate connected to the conductive jumper by a component side via/interconnect metal stack. The component bottom plate is situated at an intermediate metal level higher than the device top electrode, and the conductive jumper is situated at a connecting metal level higher than the component bottom plate. The conductive jumper reduces undesirable charge flow into the active device during fabrication of the passive component. The passive component can be, for example, a MEMS device.

Abstract translation: 公开了有源器件与无源器件和MEMS器件的集成。 集成半导体结构包括具有通过器件侧通孔/互连金属叠层连接到导电跳线的器件顶部电极的有源器件。 集成半导体结构还包括具有通过部件侧通孔/互连金属叠层连接到导电跳线的部件底板的无源部件。 部件底板位于高于器件顶部电极的中间金属水平处，并且导电跳线位于高于部件底板的连接金属水平处。 导电跳线在制造无源部件期间减少不期望的充电流入有源器件。 无源部件可以是例如MEMS器件。

公开(公告)号：US09377350B2

公开(公告)日：2016-06-28

申请号：US14827112

申请日：2015-08-14

Applicant: Newport Fab, LLC

Inventor： David J. Howard ,  Jeff Rose ,  Arjun Kar-Roy ,  Michael J. DeBar

IPC: G01J1/04

CPC classification number: G01J1/0414 ,  G01J5/0225 ,  G01J5/024 ,  G01J5/20

Abstract: A light sensor having a chemically resistant and robust reflector stack is disclosed. The reflector stack is formed over a substrate, and includes an adhesion layer, a patterned reflector layer over the adhesion layer, and a smoothing layer over the patterned reflector layer. The patterned reflector layer has a substantially flat top surface. A conformal passivation layer covers the reflector stack. An absorbing layer is situated above the reflector stack and separated from the reflector stack. The absorbing layer is supported by vias over the substrate. The absorbing layer is connected to at least one resistor, where a resistance of the at least one resistor varies in response to light absorbed by the absorbing layer. The vias are disposed on via landing pads on the substrate.

Abstract translation: 公开了一种具有耐化学腐蚀和坚固的反射器叠层的光传感器。 反射器堆叠形成在衬底上，并且包括粘合层，在粘合层上的图案化反射层，以及在图案化反射器层上方的平滑层。 图案化的反射层具有基本平坦的顶表面。 保形钝化层覆盖反射层。 吸收层位于反射器叠层上方并与反射器叠层分离。 吸收层由衬底上的通孔支撑。 吸收层连接到至少一个电阻器，其中至少一个电阻器的电阻响应于吸收层吸收的光而变化。 通孔设置在基板上的通路板上。

公开(公告)号：US09458011B2

公开(公告)日：2016-10-04

申请号：US14719087

申请日：2015-05-21

Applicant: Newport Fab, LLC

Inventor： David J. Howard ,  Michael J. DeBar ,  Jeff Rose ,  Arjun Kar-Roy

IPC: H01L21/4763 ,  B81C1/00 ,  B81B3/00 ,  H01L29/417 ,  H01L21/768

CPC classification number: B81C1/00111 ,  B81B3/007 ,  B81B2203/0307 ,  B81C1/00166 ,  B81C1/00658 ,  H01L21/47635 ,  H01L21/76883 ,  H01L29/417

Abstract: Self-supported MEMS structure and method for its formation are disclosed. An exemplary method includes forming a polymer layer over a MEMS plate over a substrate, forming a trench over the MEMS plate, forming an oxide liner in the trench on sidewalls of the trench, forming a metal liner over the oxide liner in the trench, and depositing a metallic filler in the trench to form a via. The method further includes removing the polymer layer such that the via and the MEMS plate form the self-supported MEMS structure, where the oxide liner provides mechanical rigidity for the metallic filler of the via. An exemplary structure formed by the disclosed method is also disclosed.

Abstract translation: 公开了自支撑MEMS结构及其形成方法。 示例性方法包括在衬底上方的MEMS板上形成聚合物层，在MEMS板上形成沟槽，在沟槽的侧壁上形成沟槽中的氧化物衬垫，在沟槽中的氧化物衬垫上形成金属衬垫，以及 在沟槽中沉积金属填料以形成通孔。 该方法还包括去除聚合物层，使得通孔和MEMS板形成自支撑的MEMS结构，其中氧化物衬垫为通孔的金属填料提供机械刚性。 还公开了通过公开的方法形成的示例性结构。

公开(公告)号：US20160069739A1

公开(公告)日：2016-03-10

申请号：US14827112

申请日：2015-08-14

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： David J. Howard ,  Jeff Rose ,  Arjun Kar-Roy ,  Michael J. DeBar

IPC: G01J1/04

CPC classification number: G01J1/0414 ,  G01J5/0225 ,  G01J5/024 ,  G01J5/20

Abstract: A light sensor having a chemically resistant and robust reflector stack is disclosed. The reflector stack is formed over a substrate, and includes an adhesion layer, a patterned reflector layer over the adhesion layer, and a smoothing layer over the patterned reflector layer. The patterned reflector layer has a substantially flat top surface. A conformal passivation layer covers the reflector stack. An absorbing layer is situated above the reflector stack and separated from the reflector stack. The absorbing layer is supported by vias over the substrate. The absorbing layer is connected to at least one resistor, where a resistance of the at least one resistor varies in response to light absorbed by the absorbing layer. The vias are disposed on via landing pads on the substrate.

Abstract translation: 公开了一种具有耐化学腐蚀和坚固的反射器叠层的光传感器。 反射器堆叠形成在衬底上，并且包括粘合层，在粘合层上的图案化反射层，以及在图案化反射器层上方的平滑层。 图案化的反射层具有基本平坦的顶表面。 保形钝化层覆盖反射层。 吸收层位于反射器叠层上方并与反射器叠层分离。 吸收层由衬底上的通孔支撑。 吸收层连接到至少一个电阻器，其中至少一个电阻器的电阻响应于吸收层吸收的光而变化。 通孔设置在基板上的通路板上。

公开(公告)号：US20150368092A1

公开(公告)日：2015-12-24

申请号：US14719087

申请日：2015-05-21

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： David J. Howard ,  Michael J. DeBar ,  Jeff Rose ,  Arjun Kar-Roy

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81C1/00111 ,  B81B3/007 ,  B81B2203/0307 ,  B81C1/00166 ,  B81C1/00658 ,  H01L21/47635 ,  H01L21/76883 ,  H01L29/417

Abstract: Self-supported MEMS structure and method for its formation are disclosed. An exemplary method includes forming a polymer layer over a MEMS plate over a substrate, forming a trench over the MEMS plate, forming an oxide liner in the trench on sidewalls of the trench, forming a metal liner over the oxide liner in the trench, and depositing a metallic filler in the trench to form a via. The method further includes removing the polymer layer such that the via and the MEMS plate form the self-supported MEMS structure, where the oxide liner provides mechanical rigidity for the metallic filler of the via. An exemplary structure formed by the disclosed method is also disclosed.

Abstract translation: 公开了自支撑MEMS结构及其形成方法。 示例性方法包括在衬底上方的MEMS板上形成聚合物层，在MEMS板上形成沟槽，在沟槽的侧壁上形成沟槽中的氧化物衬垫，在沟槽中的氧化物衬垫上形成金属衬垫，以及 在沟槽中沉积金属填料以形成通孔。 该方法还包括去除聚合物层，使得通孔和MEMS板形成自支撑的MEMS结构，其中氧化物衬垫为通孔的金属填料提供机械刚性。 还公开了通过公开的方法形成的示例性结构。