公开(公告)号：US20220308125A1

公开(公告)日：2022-09-29

申请号：US17656761

申请日：2022-03-28

Applicant: Northeastern University

Inventor： Nian-Xiang Sun ,  Neville Sun ,  Xianfeng Lian ,  Huaihao Chen

IPC: G01R33/028 ,  H03H9/135

Abstract: A solidly mounted resonator (SMR)-based magnetoelectric (ME) antenna comprises a substrate, a Bragg reflector disposed on the substrate, a magnetostrictive/piezoelectric ME composite element disposed on the Bragg reflector, a first electrically conductive contact and a second electrically conductive contact. The first contact is disposed between the Bragg reflector and the magnetostrictive/piezoelectric ME composite element and electrically coupled to a bottom surface of the magnetostrictive/piezoelectric ME composite element. The second contact is disposed on top of the magnetostrictive/piezoelectric ME composite element and electrically coupled to the top of the magnetostrictive/piezoelectric ME composite element. The magnetostrictive/piezoelectric ME composite element comprises a magnetorestrictive multilayer deposited on a piezoelectric layer. The magnetorestrictive multilayer produces an in-plane uniaxial magnetic anisotropy (UMA). The UMA is a twofold UMA that exhibits a symmetric radiation pattern.

公开(公告)号：US20220006005A1

公开(公告)日：2022-01-06

申请号：US17365779

申请日：2021-07-01

Applicant: Northeastern University

Inventor： Nian-Xiang Sun ,  Nirjhar Bhattacharjee

IPC: H01L43/08 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A sputter growth method for a crystalline ordered topological insulator (TI) material on an amorphous substrate, which is possible to use at a CMOS-compatible temperature. The process can be integrated into CMOS fabrication processes for Spin Orbit Torque (SOT) devices. The resulting material can include a thin film crystalline ordered TI layer, sputter deposited on an amorphous substrate, and an adjacent ferromagnetic (FM) layer in which spin-orbit torque is provided by the TI layer, for example to cause switching in magnetic states in a magnetic memory device.

公开(公告)号：US20240110914A1

公开(公告)日：2024-04-04

申请号：US18260881

申请日：2022-01-26

Applicant: Northeastern University

Inventor： Shadi Emam ,  Nian-Xiang Sun

IPC: G01N33/569 ,  B01J20/26 ,  B01J20/28 ,  G01N27/12 ,  G01N33/543

CPC classification number: G01N33/56983 ,  B01J20/262 ,  B01J20/268 ,  B01J20/28035 ,  G01N27/126 ,  G01N33/5438 ,  G01N2333/165

Abstract: Described herein is a sensor comprising a doped silicon layer, a graphene layer on the doped silicon layer, a molecularly imprinted polymer (MIP) layer on the graphene layer, and electrodes in operative arrangement with the MIP layer and configured to provide a signal indicative of resistance. The MIP layer is derived from a MIP monomer and functional monomer. Also described herein is a detector comprising a sensor described herein as well as methods of making and using the sensors and detectors, e.g., to detect an analyte, such as a virus.

公开(公告)号：US20230140376A1

公开(公告)日：2023-05-04

申请号：US17515146

申请日：2021-10-29

Applicant: Northeastern University

Inventor： Hongli Zhu ,  Nian-Xiang Sun

IPC: B27K3/00 ,  B27K3/02 ,  B27K3/26 ,  B27K5/02

Abstract: Provided herein are compositions comprising wood and an inorganic magnetic material which is uniformly distributed throughout the wood, as well as methods of providing electromagnetic interference and/or shielding using the compositions (e.g., for use in construction, defense information security, and aerospace applications). Also provided herein is a process for preparing the compositions.

公开(公告)号：US12072396B2

公开(公告)日：2024-08-27

申请号：US17656761

申请日：2022-03-28

Applicant: Northeastern University

Inventor： Nian-Xiang Sun ,  Neville Sun ,  Xianfeng Lian ,  Huaihao Chen

IPC: G01R33/028 ,  H03H9/135 ,  H03H9/17

CPC classification number: G01R33/0286 ,  H03H9/135 ,  H03H9/175

Abstract: A solidly mounted resonator (SMR)-based magnetoelectric (ME) antenna comprises a substrate, a Bragg reflector disposed on the substrate, a magnetostrictive/piezoelectric ME composite element disposed on the Bragg reflector, a first electrically conductive contact and a second electrically conductive contact. The first contact is disposed between the Bragg reflector and the magnetostrictive/piezoelectric ME composite element and electrically coupled to a bottom surface of the magnetostrictive/piezoelectric ME composite element. The second contact is disposed on top of the magnetostrictive/piezoelectric ME composite element and electrically coupled to the top of the magnetostrictive/piezoelectric ME composite element. The magnetostrictive/piezoelectric ME composite element comprises a magnetorestrictive multilayer deposited on a piezoelectric layer. The magnetorestrictive multilayer produces an in-plane uniaxial magnetic anisotropy (UMA). The UMA is a twofold UMA that exhibits a symmetric radiation pattern.

公开(公告)号：US20150255846A1

公开(公告)日：2015-09-10

申请号：US14430659

申请日：2013-09-27

Applicant: NORTHEASTERN UNIVERSITY

Inventor： Nian-Xiang Sun ,  Jing Wu ,  Xi Yang

IPC: H01P1/215

CPC classification number: H01P1/215 ,  H01P1/218 ,  H01P1/32 ,  H01P1/37

Abstract: A nonreciprocal tunable bandpass filter includes a transducer comprising parallel coupled conductive lines; and a ferrite body having at least two opposing parallel edges, the ferrite body disposed over the microstrip transducer such that the parallel edges of the ferrite layer are tilted at a non-zero angle Θ with respect to the parallel coupled microstrip lines of the microstrip transducer.

Abstract translation: 不可逆可调带通滤波器包括：包括并联耦合的导线的换能器; 以及具有至少两个相对的平行边缘的铁氧体，所述铁氧体主体设置在所述微带传感器的上方，使得所述铁氧体层的平行边缘相对于所述微带传感器的并联耦合微带线以非零角度θ倾斜 。

公开(公告)号：US12178140B2

公开(公告)日：2024-12-24

申请号：US17457348

申请日：2021-12-02

Applicant: Northeastern University

Inventor： Nian-Xiang Sun ,  Nirjhar Bhattacharjee

IPC: H10N52/00 ,  G11C11/16 ,  G11C11/18 ,  H10N50/80 ,  H10N50/85 ,  H10N52/01 ,  H10N52/80

Abstract: A thin film heterostructure of a topological insulator (TI) with a normal metal (NM) is used as a highly energy efficient and low power dissipation spin Hall Material (SHM). The TI material is sputter deposited onto a substrate and cooled in high vacuum, and an NM material is sputter deposited onto the TI film. The structure and method is compatible with complementary metal oxide (CMOS) processes, and with growth of large-area TI films for wafer-level device fabrication.

公开(公告)号：US11968905B2

公开(公告)日：2024-04-23

申请号：US17365779

申请日：2021-07-01

Applicant: Northeastern University

Inventor： Nian-Xiang Sun ,  Nirjhar Bhattacharjee

IPC: H10N50/10 ,  G11C11/16 ,  H10B61/00 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

CPC classification number: H10N50/10 ,  G11C11/161 ,  H10B61/00 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

Abstract: A sputter growth method for a crystalline ordered topological insulator (TI) material on an amorphous substrate, which is possible to use at a CMOS-compatible temperature. The process can be integrated into CMOS fabrication processes for Spin Orbit Torque (SOT) devices. The resulting material can include a thin film crystalline ordered TI layer, sputter deposited on an amorphous substrate, and an adjacent ferromagnetic (FM) layer in which spin-orbit torque is provided by the TI layer, for example to cause switching in magnetic states in a magnetic memory device.

公开(公告)号：US20230296597A1

公开(公告)日：2023-09-21

申请号：US18040920

申请日：2021-01-20

Applicant: Northeastern University

Inventor： Nian-Xiang Sun ,  Shadi Emam ,  Mehdi Nasrollahpour

IPC: G01N33/543 ,  G01N33/569 ,  G01N27/12

CPC classification number: G01N33/5438 ,  G01N33/56983 ,  G01N27/125 ,  G01N2333/165 ,  G01N2333/08

Abstract: Devices and methods for the detection of an analyte, e.g, from exhaled breath or air are provided. A sensor includes a polymer layer molecularly imprinted for the analyte, a metal layer, and an electrocatalytic layer disposed between the polymer layer and the metal layer. The electrocatalytic layer is functionalized with at least one chemical compound that provides for noncovalent interaction with the analyte. The sensor further includes electrodes in operative arrangement with the polymer layer and configured to provide a signal indicative of a resistance. A change in resistance of the device can indicate the presence of the analyte in the sample.

公开(公告)号：US20220173307A1

公开(公告)日：2022-06-02

申请号：US17457348

申请日：2021-12-02

Applicant: Northeastern University

Inventor： Nian-Xiang Sun ,  Nirjhar Bhattacharjee

IPC: H01L43/06 ,  G11C11/16 ,  H01L43/04 ,  H01L43/14 ,  H01L27/22 ,  H01L43/10

Abstract: A thin film heterostructure of a topological insulator (TI) with a normal metal (NM) is used as a highly energy efficient and low power dissipation spin Hall Material (SHM). The TI material is sputter deposited onto a substrate and cooled in high vacuum, and an NM material is sputter deposited onto the TI film. The structure and method is compatible with complementary metal oxide (CMOS) processes, and with growth of large-area TI films for wafer-level device fabrication.