公开(公告)号：US20210320223A1

公开(公告)日：2021-10-14

申请号：US17267575

申请日：2019-08-13

Applicant: OSRAM OLED GmbH

Inventor： Sebastian Pickel ,  Katharina Werner ,  Bernd Böhm ,  Anna Strozecka-Assig ,  Anna Nirschl

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/30 ,  H01L33/38

Abstract: In at least one embodiment, the optoelectronic semiconductor chip (100) comprises a semiconductor layer sequence (1) having an active layer (10), a doped current spreading layer (11) and an output coupling layer (12), which are arranged one above the other in this order. The active layer generates primary radiation during intended operation. The current spreading layer comprises a larger lateral electrical conductivity than the output coupling layer. The output coupling layer comprises output coupling structures (121) for coupling out radiation on an exit side (120) facing away from the active layer. The output coupling layer comprises a lower absorption coefficient for primary radiation than the current spreading layer.

公开(公告)号：US12159956B2

公开(公告)日：2024-12-03

申请号：US17267575

申请日：2019-08-13

Applicant: OSRAM OLED GmbH

Inventor： Sebastian Pickel ,  Katharina Werner ,  Bernd Böhm ,  Anna Strozecka-Assig ,  Anna Nirschl

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/30 ,  H01L33/38

Abstract: Provided is an optoelectronic semiconductor chip including a semiconductor layer sequence having an active layer, a doped current spreading layer and an output coupling layer, which are arranged one above the other in this order. The active layer generates primary radiation during intended operation. The current spreading layer includes a larger lateral electrical conductivity than the output coupling layer. The output coupling layer includes output coupling structures for coupling out radiation on an exit side facing away from the active layer. The output coupling layer includes a lower absorption coefficient for primary radiation than the current spreading layer.