公开(公告)号：US12159956B2

公开(公告)日：2024-12-03

申请号：US17267575

申请日：2019-08-13

Applicant: OSRAM OLED GmbH

Inventor： Sebastian Pickel ,  Katharina Werner ,  Bernd Böhm ,  Anna Strozecka-Assig ,  Anna Nirschl

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/30 ,  H01L33/38

Abstract: Provided is an optoelectronic semiconductor chip including a semiconductor layer sequence having an active layer, a doped current spreading layer and an output coupling layer, which are arranged one above the other in this order. The active layer generates primary radiation during intended operation. The current spreading layer includes a larger lateral electrical conductivity than the output coupling layer. The output coupling layer includes output coupling structures for coupling out radiation on an exit side facing away from the active layer. The output coupling layer includes a lower absorption coefficient for primary radiation than the current spreading layer.

公开(公告)号：US11631787B2

公开(公告)日：2023-04-18

申请号：US16980910

申请日：2019-03-14

Applicant: OSRAM OLED GmbH

Inventor： Sebastian Pickel ,  Johannes Saric ,  Wolfgang Schmid ,  Anna Strozecka-Assig ,  Johannes Baur

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/46 ,  H01L33/42 ,  H01L33/30

Abstract: In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

公开(公告)号：US12255268B2

公开(公告)日：2025-03-18

申请号：US18619924

申请日：2024-03-28

Applicant: OSRAM OLED GmbH

Inventor： Sebastian Pickel ,  Johannes Saric ,  Wolfgang Schmid ,  Anna Strozecka-Assig ,  Johannes Baur

IPC: H01L33/46 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/30

Abstract: In one embodiment, the optoelectronic semiconductor chip includes a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

公开(公告)号：US12015107B2

公开(公告)日：2024-06-18

申请号：US18180992

申请日：2023-03-09

Applicant: OSRAM OLED GmbH

Inventor： Sebastian Pickel ,  Johannes Saric ,  Wolfgang Schmid ,  Anna Strozecka-Assig ,  Johannes Baur

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46 ,  H01L33/30

CPC classification number: H01L33/38 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/30 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

公开(公告)号：US20210320223A1

公开(公告)日：2021-10-14

申请号：US17267575

申请日：2019-08-13

Applicant: OSRAM OLED GmbH

Inventor： Sebastian Pickel ,  Katharina Werner ,  Bernd Böhm ,  Anna Strozecka-Assig ,  Anna Nirschl

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/30 ,  H01L33/38

Abstract: In at least one embodiment, the optoelectronic semiconductor chip (100) comprises a semiconductor layer sequence (1) having an active layer (10), a doped current spreading layer (11) and an output coupling layer (12), which are arranged one above the other in this order. The active layer generates primary radiation during intended operation. The current spreading layer comprises a larger lateral electrical conductivity than the output coupling layer. The output coupling layer comprises output coupling structures (121) for coupling out radiation on an exit side (120) facing away from the active layer. The output coupling layer comprises a lower absorption coefficient for primary radiation than the current spreading layer.