公开(公告)号：US20200259309A1

公开(公告)日：2020-08-13

申请号：US16647324

申请日：2018-09-12

Applicant: OSRAM OLED GMBH

Inventor： Alfred LELL ,  Muhammad ALI ,  Bernhard STOJETZ ,  Harald KÖNIG

IPC: H01S5/024 ,  H01S5/40 ,  H01S5/30 ,  H01S5/00

Abstract: A light-emitting semiconductor component (99) comprising a laser bar (100) comprising at least two individual emitters (2), and a conversion element (300) arranged downstream of the laser bar (100) in the beam path, wherein at least some of the individual emitters (2) are arranged side by side in a lateral transverse direction (X), the laser bar (100) is formed with a nitride compound semiconductor material, the individual emitters (2) are configured to emit primary radiation (L1) during normal operation and the conversion element (300) is configured to convert at least part of the primary radiation (L1) into secondary radiation (L2), the secondary radiation (L2) having a longer wavelength than the primary radiation (L1).

公开(公告)号：US20240088622A1

公开(公告)日：2024-03-14

申请号：US18515928

申请日：2023-11-21

Applicant: OSRAM OLED GmbH

Inventor： Jörg Erich SORG ,  Harald KÖNIG ,  Alfred LELL ,  Florian PESKOLLER ,  Karsten AUEN ,  Roland SCHULZ ,  Herbert BRUNNER ,  Frank SINGER ,  Roland HÜTTINGER

IPC: H01S5/028 ,  H01S5/02253 ,  H01S5/02326 ,  H01S5/0236

CPC classification number: H01S5/028 ,  H01S5/02253 ,  H01S5/02326 ,  H01S5/0236 ,  H01S5/0087

Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 μm. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

公开(公告)号：US20230068945A1

公开(公告)日：2023-03-02

申请号：US17971156

申请日：2022-10-21

Applicant: OSRAM OLED GmbH

Inventor： Jörg Erich SORG ,  Harald KÖNIG ,  Alfred LELL ,  Florian PESKOLLER ,  Karsten AUEN ,  Roland SCHULZ ,  Herbert BRUNNER ,  Frank SINGER ,  Roland HÜTTINGER

IPC: H01S5/028 ,  H01S5/0236 ,  H01S5/02253 ,  H01S5/02326

Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 μm. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

公开(公告)号：US20200313399A1

公开(公告)日：2020-10-01

申请号：US16754723

申请日：2018-10-08

Applicant: OSRAM OLED GmbH

Inventor： Jörg Erich SORG ,  Harald KÖNIG ,  Alfred LELL ,  Florian PESKOLLER ,  Karsten AUEN ,  Roland SCHULZ ,  Herbert BRUNNER ,  Frank SINGER ,  Roland HÜTTINGER

IPC: H01S5/40 ,  H01S5/022 ,  H01S5/028

Abstract: In one embodiment the semiconductor laser (1) comprises a carrier (2) and an edge-emitting laser diode (3) which is mounted on the carrier (2) and which comprises an active zone (33) for generating a laser radiation (L) and a facet (30) with a radiation exit region (31). The semiconductor laser (1) further comprises a protective cover (4), preferably a lens for collimation of the laser radiation (L). The protective cover (4) is fastened to the facet (30) and to a side surface (20) of the carrier (2) by means of an adhesive (5). A mean distance between a light entrance side (41) of the protective cover (4) and the facet (30) is at most 60 μm. The semiconductor laser (1) is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.