公开(公告)号：US20210249843A1

公开(公告)日：2021-08-12

申请号：US16973452

申请日：2019-06-06

Applicant: OSRAM OLED GmbH

Inventor： Bernhard STOJETZ ,  Christoph EICHLER ,  Alfred LELL ,  Sven GERHARD

IPC: H01S5/183 ,  H01S5/04 ,  H01S5/40

Abstract: An optoelectronic semiconductor component is provided that includes a primary light source and a secondary light source. The primary light source and the secondary light source are monolithically integrated in the semiconductor component so that only condensed matter is located between them. The primary light source includes a first resonator containing a semiconductor layer sequence which is electrically pumped during operation. A first resonator axis of the first resonator is oriented parallel to a growth direction (G) of the semiconductor layer sequence. The primary light source is configured to generate pump laser radiation (P). The secondary light source includes a pump medium for generating secondary radiation (S) and the pump medium is optically pumped by the pump laser radiation (P). The first resonator axis points past the pump medium.

公开(公告)号：US20200259309A1

公开(公告)日：2020-08-13

申请号：US16647324

申请日：2018-09-12

Applicant: OSRAM OLED GMBH

Inventor： Alfred LELL ,  Muhammad ALI ,  Bernhard STOJETZ ,  Harald KÖNIG

IPC: H01S5/024 ,  H01S5/40 ,  H01S5/30 ,  H01S5/00

Abstract: A light-emitting semiconductor component (99) comprising a laser bar (100) comprising at least two individual emitters (2), and a conversion element (300) arranged downstream of the laser bar (100) in the beam path, wherein at least some of the individual emitters (2) are arranged side by side in a lateral transverse direction (X), the laser bar (100) is formed with a nitride compound semiconductor material, the individual emitters (2) are configured to emit primary radiation (L1) during normal operation and the conversion element (300) is configured to convert at least part of the primary radiation (L1) into secondary radiation (L2), the secondary radiation (L2) having a longer wavelength than the primary radiation (L1).

公开(公告)号：US20240088622A1

公开(公告)日：2024-03-14

申请号：US18515928

申请日：2023-11-21

Applicant: OSRAM OLED GmbH

Inventor： Jörg Erich SORG ,  Harald KÖNIG ,  Alfred LELL ,  Florian PESKOLLER ,  Karsten AUEN ,  Roland SCHULZ ,  Herbert BRUNNER ,  Frank SINGER ,  Roland HÜTTINGER

IPC: H01S5/028 ,  H01S5/02253 ,  H01S5/02326 ,  H01S5/0236

CPC classification number: H01S5/028 ,  H01S5/02253 ,  H01S5/02326 ,  H01S5/0236 ,  H01S5/0087

Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 μm. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

公开(公告)号：US20230068945A1

公开(公告)日：2023-03-02

申请号：US17971156

申请日：2022-10-21

Applicant: OSRAM OLED GmbH

Inventor： Jörg Erich SORG ,  Harald KÖNIG ,  Alfred LELL ,  Florian PESKOLLER ,  Karsten AUEN ,  Roland SCHULZ ,  Herbert BRUNNER ,  Frank SINGER ,  Roland HÜTTINGER

IPC: H01S5/028 ,  H01S5/0236 ,  H01S5/02253 ,  H01S5/02326

Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 μm. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

公开(公告)号：US20200313399A1

公开(公告)日：2020-10-01

申请号：US16754723

申请日：2018-10-08

Applicant: OSRAM OLED GmbH

Inventor： Jörg Erich SORG ,  Harald KÖNIG ,  Alfred LELL ,  Florian PESKOLLER ,  Karsten AUEN ,  Roland SCHULZ ,  Herbert BRUNNER ,  Frank SINGER ,  Roland HÜTTINGER

IPC: H01S5/40 ,  H01S5/022 ,  H01S5/028

Abstract: In one embodiment the semiconductor laser (1) comprises a carrier (2) and an edge-emitting laser diode (3) which is mounted on the carrier (2) and which comprises an active zone (33) for generating a laser radiation (L) and a facet (30) with a radiation exit region (31). The semiconductor laser (1) further comprises a protective cover (4), preferably a lens for collimation of the laser radiation (L). The protective cover (4) is fastened to the facet (30) and to a side surface (20) of the carrier (2) by means of an adhesive (5). A mean distance between a light entrance side (41) of the protective cover (4) and the facet (30) is at most 60 μm. The semiconductor laser (1) is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

公开(公告)号：US20210257812A1

公开(公告)日：2021-08-19

申请号：US16973458

申请日：2019-06-12

Applicant: OSRAM OLED GmbH

Inventor： Sven GERHARD ,  Christoph EICHLER ,  Alfred LELL ,  Muhammad ALI

IPC: H01S5/22 ,  H01S5/042 ,  H01S5/028 ,  H01S5/026 ,  H01S5/02

Abstract: A semiconductor laser (1) is provided that includes a semiconductor layer sequence in which an active zone for generating laser radiation is located. A ridge waveguide is formed as an elevation from the semiconductor layer sequence. An electrical contact layer is located directly on the ridge waveguide. A metallic electrical connection region is located directly on the contact layer and is configured for external electrical connection of the semiconductor laser. A metallic breakage coating extends directly to facets of the semiconductor layer sequence and is arranged on the ridge waveguide. The breakage coating is electrically functionless and includes a lower speed of sound for a breaking wave than the semiconductor layer sequence in the region of the ridge waveguide.