Optoelectronic semiconductor component having a contact structure, and method for producing a contact structure for an optoelectronic semiconductor component

    公开(公告)号:US11411140B2

    公开(公告)日:2022-08-09

    申请号:US16635464

    申请日:2018-07-04

    Abstract: A method for producing a contact structure for an optoelectronic semiconductor component is given, comprising the steps: a) providing a growth substrate having a semiconductor body which is grown thereon and comprises a first and a second region, and an active region, b) creating at least one first recess which, starting from the second region, extends completely through the active region into the first region and does not completely penetrate the first region, c) inserting a first electrically conductive contact material into the first recess, d) fixing the semiconductor body with the side facing away from the growth substrate on a support substrate, and detaching the growth substrate from the semiconductor body, e) creating at least one second recess extending from the first region to the first recess so that the first recess and the second recess form a feedthrough through the semiconductor body, f) introducing a second electrically conductive contact material into the second recess in such a way that the first and second contact materials form an electrically conductive contact structure through the semiconductor body. Furthermore, an optoelectronic semiconductor component with a contact structure is specified.

    OPTOELECTRONIC SEMICONDUCTOR COMPONENT WITH CONTACT ELEMENTS AND METHOD FOR PRODUCING THE SAME

    公开(公告)号:US20210305476A1

    公开(公告)日:2021-09-30

    申请号:US17268087

    申请日:2019-08-09

    Abstract: An optoelectronic semiconductor component may include a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a first contact element for making contact with the first semiconductor layer, and a second contact element for making contact with the second semiconductor layer. The first semiconductor layer may be arranged on a side facing away from a first main surface of the second semiconductor layer. Electromagnetic radiation may be output via the first main surface of the second semiconductor layer. The first contact element and the second contact element may each be arranged on a side of a first main surface of the first semiconductor layer. The first contact element may have a first section extending in a first direction, and a second section connected to the first section and extending in a second direction different from the first direction.

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