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1.
公开(公告)号:US12255268B2
公开(公告)日:2025-03-18
申请号:US18619924
申请日:2024-03-28
Applicant: OSRAM OLED GmbH
Inventor: Sebastian Pickel , Johannes Saric , Wolfgang Schmid , Anna Strozecka-Assig , Johannes Baur
Abstract: In one embodiment, the optoelectronic semiconductor chip includes a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.
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2.
公开(公告)号:US12015107B2
公开(公告)日:2024-06-18
申请号:US18180992
申请日:2023-03-09
Applicant: OSRAM OLED GmbH
Inventor: Sebastian Pickel , Johannes Saric , Wolfgang Schmid , Anna Strozecka-Assig , Johannes Baur
CPC classification number: H01L33/38 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/30 , H01L2933/0016 , H01L2933/0025
Abstract: In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.
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公开(公告)号:US11411140B2
公开(公告)日:2022-08-09
申请号:US16635464
申请日:2018-07-04
Applicant: OSRAM OLED GMBH
Inventor: Wolfgang Schmid , Markus Bröll
IPC: H01L33/38 , H01L33/00 , H01L31/0216 , H01L31/0224 , H01L31/0352 , H01L31/18 , H01L33/20 , H01L33/44
Abstract: A method for producing a contact structure for an optoelectronic semiconductor component is given, comprising the steps: a) providing a growth substrate having a semiconductor body which is grown thereon and comprises a first and a second region, and an active region, b) creating at least one first recess which, starting from the second region, extends completely through the active region into the first region and does not completely penetrate the first region, c) inserting a first electrically conductive contact material into the first recess, d) fixing the semiconductor body with the side facing away from the growth substrate on a support substrate, and detaching the growth substrate from the semiconductor body, e) creating at least one second recess extending from the first region to the first recess so that the first recess and the second recess form a feedthrough through the semiconductor body, f) introducing a second electrically conductive contact material into the second recess in such a way that the first and second contact materials form an electrically conductive contact structure through the semiconductor body. Furthermore, an optoelectronic semiconductor component with a contact structure is specified.
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公开(公告)号:US11705370B2
公开(公告)日:2023-07-18
申请号:US17255435
申请日:2019-06-27
Applicant: OSRAM OLED GmbH
Inventor: Benjamin Michaelis , Markus Broell , Robert Walter , Franz Eberhard , Michael Huber , Wolfgang Schmid
IPC: H01L21/78 , H01L33/00 , H01L23/50 , H01L23/00 , H01L31/02 , H01L31/0216 , H01L31/18 , H01L33/44 , H01L33/62
CPC classification number: H01L21/78 , H01L23/50 , H01L24/94 , H01L31/02002 , H01L31/0216 , H01L31/186 , H01L33/0093 , H01L33/0095 , H01L33/44 , H01L33/62 , H01L24/32 , H01L24/83 , H01L2224/32225 , H01L2224/83192 , H01L2224/83801
Abstract: A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.
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公开(公告)号:US11631787B2
公开(公告)日:2023-04-18
申请号:US16980910
申请日:2019-03-14
Applicant: OSRAM OLED GmbH
Inventor: Sebastian Pickel , Johannes Saric , Wolfgang Schmid , Anna Strozecka-Assig , Johannes Baur
Abstract: In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.
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公开(公告)号:US20210265213A1
公开(公告)日:2021-08-26
申请号:US17255435
申请日:2019-06-27
Applicant: OSRAM OLED GmbH
Inventor: Benjamin Michaelis , Markus Broell , Robert Walter , Franz Eberhard , Michael Huber , Wolfgang Schmid
IPC: H01L21/78 , H01L33/44 , H01L31/0216 , H01L23/50 , H01L33/62 , H01L31/02 , H01L23/00 , H01L33/00 , H01L31/18
Abstract: A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.
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7.
公开(公告)号:US20210305476A1
公开(公告)日:2021-09-30
申请号:US17268087
申请日:2019-08-09
Applicant: OSRAM OLED GMBH
Inventor: Wolfgang Schmid , Christoph Klemp , Isabel Otto
Abstract: An optoelectronic semiconductor component may include a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a first contact element for making contact with the first semiconductor layer, and a second contact element for making contact with the second semiconductor layer. The first semiconductor layer may be arranged on a side facing away from a first main surface of the second semiconductor layer. Electromagnetic radiation may be output via the first main surface of the second semiconductor layer. The first contact element and the second contact element may each be arranged on a side of a first main surface of the first semiconductor layer. The first contact element may have a first section extending in a first direction, and a second section connected to the first section and extending in a second direction different from the first direction.
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8.
公开(公告)号:US11949054B2
公开(公告)日:2024-04-02
申请号:US17268087
申请日:2019-08-09
Applicant: OSRAM OLED GMBH
Inventor: Wolfgang Schmid , Christoph Klemp , Isabel Otto
CPC classification number: H01L33/62 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44 , H01L33/505 , H01L33/54 , H01L2933/0016 , H01L2933/005 , H01L2933/0066
Abstract: An optoelectronic semiconductor component may include a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a first contact element for making contact with the first semiconductor layer, and a second contact element for making contact with the second semiconductor layer. The first semiconductor layer may be arranged on a side facing away from a first main surface of the second semiconductor layer. Electromagnetic radiation may be output via the first main surface of the second semiconductor layer. The first contact element and the second contact element may each be arranged on a side of a first main surface of the first semiconductor layer. The first contact element may have a first section extending in a first direction, and a second section connected to the first section and extending in a second direction different from the first direction.
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