公开(公告)号：US20230071724A1

公开(公告)日：2023-03-09

申请号：US17498771

申请日：2021-10-12

Applicant: PHISON ELECTRONICS CORP.

Inventor： Jia-Fan Chien ,  Wei Lin ,  Yu-Cheng Hsu ,  Yu-Siang Yang

IPC: G06F3/06 ,  G06F11/30

Abstract: A memory management method, a memory storage device, and a memory control circuit unit are provided. The method includes: detecting a first temperature status of a rewritable non-volatile memory module; performing a first write operation on a first physical unit under the first temperature status to store first data to the first physical unit; after performing the first write operation, detecting a second temperature status of the rewritable non-volatile memory module; in response to the first temperature status and the second temperature status meeting a first condition, performing a data refresh operation on the first physical unit under the second temperature status to re-store the first data to a second physical unit different from the first physical unit.