公开(公告)号：US20160350191A1

公开(公告)日：2016-12-01

申请号：US14818316

申请日：2015-08-05

Applicant: PHISON ELECTRONICS CORP.

Inventor： Jiann-Mou Chen

IPC: G06F11/20 ,  G06F3/06

CPC classification number: G06F11/2046 ,  G06F3/0616 ,  G06F3/064 ,  G06F3/0644 ,  G06F3/0679 ,  G06F2201/85

Abstract: A memory management method, a memory storage device and a memory control circuit unit are provided. The memory management method includes: detecting a replacement physical unit number of a rewritable non-volatile memory module; adjusting an available capacity of the rewritable non-volatile memory module from a first available capacity to a second available capacity if the replacement physical unit number meets a default condition. Therefore, a lifespan of the memory storage device may be prolonged by adjusting the available capacity of the rewritable non-volatile memory module.

Abstract translation: 提供存储器管理方法，存储器存储装置和存储器控制电路单元。 存储器管理方法包括：检测可重写非易失性存储器模块的替换物理单元号; 如果所述替换物理单元号满足默认条件，则将可重写非易失性存储器模块的可用容量从第一可用容量调整到第二可用容量。 因此，可以通过调整可重写非易失性存储器模块的可用容量来延长存储器存储设备的寿命。

公开(公告)号：US09946476B2

公开(公告)日：2018-04-17

申请号：US14645368

申请日：2015-03-11

Applicant: PHISON ELECTRONICS CORP.

Inventor： Jiann-Mou Chen

IPC: G06F12/00 ,  G06F3/06 ,  G06F12/02

CPC classification number: G06F3/0619 ,  G06F3/061 ,  G06F3/0659 ,  G06F3/0688 ,  G06F12/0246 ,  G06F2212/7201 ,  G06F2212/7211

Abstract: A memory management method for a rewritable non-volatile memory module is provided. The rewritable non-volatile memory module has a plurality of devices. The method includes dividing a plurality of memory logical units to a first logical unit group mapping to physical erasing unit of a first device and a second logical unit group mapping to physical erasing units of a second device; receiving first data stored into at least one first logical unit of the first logical unit group, and writing the first data into at least one first erasing unit, mapping to the at least one first logical unit, of the first device; and recording a wear value of every device. The method also includes performing a remapping operation corresponding to a predetermined condition if an operation status of the devices meets the predetermined condition.

公开(公告)号：US09760456B2

公开(公告)日：2017-09-12

申请号：US14818316

申请日：2015-08-05

Applicant: PHISON ELECTRONICS CORP.

Inventor： Jiann-Mou Chen

IPC: G06F11/20 ,  G06F3/06

CPC classification number: G06F11/2046 ,  G06F3/0616 ,  G06F3/064 ,  G06F3/0644 ,  G06F3/0679 ,  G06F2201/85

Abstract: A memory management method, a memory storage device and a memory control circuit unit are provided. The memory management method includes: detecting a replacement physical unit number of a rewritable non-volatile memory module; adjusting an available capacity of the rewritable non-volatile memory module from a first available capacity to a second available capacity if the replacement physical unit number meets a default condition. Therefore, a lifespan of the memory storage device may be prolonged by adjusting the available capacity of the rewritable non-volatile memory module.

公开(公告)号：US20160216906A1

公开(公告)日：2016-07-28

申请号：US14645368

申请日：2015-03-11

Applicant: PHISON ELECTRONICS CORP.

Inventor： Jiann-Mou Chen

IPC: G06F3/06 ,  G06F12/02

CPC classification number: G06F3/0619 ,  G06F3/061 ,  G06F3/0659 ,  G06F3/0688 ,  G06F12/0246 ,  G06F2212/7201 ,  G06F2212/7211

Abstract: A memory management method for a rewritable non-volatile memory module is provided. The rewritable non-volatile memory module has a plurality of devices. The method includes dividing a plurality of memory logical units to a first logical unit group mapping to physical erasing unit of a first device and a second logical unit group mapping to physical erasing units of a second device; receiving first data stored into at least one first logical unit of the first logical unit group, and writing the first data into at least one first erasing unit, mapping to the at least one first logical unit, of the first device; and recording a wear value of every device. The method also includes performing a remapping operation corresponding to a predetermined condition if an operation status of the devices meets the predetermined condition.

Abstract translation: 提供了一种用于可重写非易失性存储器模块的存储器管理方法。 可重写非易失性存储器模块具有多个设备。 该方法包括将多个存储器逻辑单元划分为映​​射到第一设备的物理擦除单元的第一逻辑单元组和映射到第二设备的物理擦除单元的第二逻辑单元组; 接收存储在所述第一逻辑单元组的至少一个第一逻辑单元中的第一数据，以及将所述第一数据写入到所述第一设备的至少一个第一逻辑单元的至少一个第一擦除单元中; 并记录每个设备的磨损值。 该方法还包括如果设备的操作状态满足预定条件，则执行对应于预定条件的重新映射操作。