-
公开(公告)号:US20150185616A1
公开(公告)日:2015-07-02
申请号:US14591336
申请日:2015-01-07
Applicant: Pixelligent Technologies, LLC
Inventor: Gregory D. COOPER , Zhiyun CHEN , Z. Serpil GONEN WILLIAMS , Larry F. THOMPSON
IPC: G03F7/20
CPC classification number: G03F7/20 , G03F7/0043 , G03F7/0047 , G03F7/2002 , G03F7/2022 , G03F7/2041 , G03F7/2053 , Y10T428/24479 , Y10T428/31504
Abstract: New routes involving multi-step reversible photo-chemical reactions using two-step techniques to provide non-linear resist for lithography are described in this disclosure. They may provide exposure quadratically dependant on the intensity of the light. Several specific examples, including but not limited to using nanocrystals, are also described. Combined with double patterning, these approaches may create sub-diffraction limit feature density.
Abstract translation: 本公开描述了涉及使用两步技术提供用于光刻的非线性抗蚀剂的多步可逆光化学反应的新途径。 它们可以根据光的强度二次提供曝光。 还描述了几个具体实例,包括但不限于使用纳米晶体。 结合双重图案化,这些方法可能产生亚衍射极限特征密度。
-
公开(公告)号:US20130136897A1
公开(公告)日:2013-05-30
申请号:US13748267
申请日:2013-01-23
Applicant: Pixelligent Technologies, LLC
Inventor: Gregory D. COOPER , Zhiyun CHEN , Z. Serpil GONEN WILLIAMS , Larry F. THOMPSON
IPC: G03F7/20
CPC classification number: G03F7/20 , G03F7/0043 , G03F7/0047 , G03F7/2002 , G03F7/2022 , G03F7/2041 , G03F7/2053 , Y10T428/24479 , Y10T428/31504
Abstract: New routes involving multi-step reversible photo-chemical reactions using two-step techniques to provide non-linear resist for lithography are described in this disclosure. They may provide exposure quadratically dependant on the intensity of the light. Several specific examples, including but not limited to using nanocrystals, are also described. Combined with double patterning, these approaches may create sub-diffraction limit feature density.
-
公开(公告)号:US20130207238A1
公开(公告)日:2013-08-15
申请号:US13764514
申请日:2013-02-11
Applicant: Pixelligent Technologies, LLC
Inventor: Gregory D. COOPER , Brian L. WEHRENBERG
CPC classification number: H01L21/0274 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/004 , G03F7/039 , G03F7/20 , G03F7/38 , H01L21/0271 , H01L21/324 , H01L21/82 , H01L27/04 , H01L29/06
Abstract: An integrated circuit is made by depositing a pinning layer on a substrate. A block copolymer photoresist is formed on the pinning layer. The block copolymer has two blocks A and B that do not self-assemble under at least some annealing conditions. The exposed block copolymer photoresist is processed to cleave at least some block copolymer bonds in the exposed selected regions. The exposed pinning layer is processed to create a chemical epitaxial pattern to direct the local self assembly of the block copolymer.
-
公开(公告)号:US20190006630A1
公开(公告)日:2019-01-03
申请号:US16019300
申请日:2018-06-26
Applicant: PIXELLIGENT TECHNOLOGIES, LLC
Inventor: Zhiyun CHEN , Gregory D. COOPER
CPC classification number: H01L51/5275 , G02B3/0056 , G02B3/0087 , H01L27/3211 , H01L27/3244 , H01L51/5253
Abstract: Light-emitting devices and methods of making the same are described whereby lenses of any array include a material with a higher refractive index than an encapsulation layer of a substrate layer, the refractive index of the material being in a range of greater than 1.7 to 1.9 at 400 nm. The material forming the lenses includes nanocomposite comprised of inorganic nanocrystals and a polymeric matrix, wherein the nanocrystals are selected from the group consisting of ZrO2, ZnO, MgO, HfO2, NbO5, Ta2O5 and Y2O3. A 3-4 micron thick sample of the nanocomposite has an optical transmittance of at least 80% over a range of 440 nm to 800 nm.
-
公开(公告)号:US20150168842A1
公开(公告)日:2015-06-18
申请号:US14636433
申请日:2015-03-03
Applicant: Pixelligent Technologies, LLC
Inventor: Gregory D. COOPER , Brian L. WEHRENBERG
IPC: G03F7/38 , H01L27/04 , H01L21/82 , H01L21/324 , H01L21/027
CPC classification number: H01L21/0274 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/004 , G03F7/039 , G03F7/20 , G03F7/38 , H01L21/0271 , H01L21/324 , H01L21/82 , H01L27/04 , H01L29/06
Abstract: An integrated circuit is made by depositing a pinning layer on a substrate. A block copolymer photoresist is formed on the pinning layer. The block copolymer has two blocks A and B that do not self-assemble under at least some annealing conditions. The exposed block copolymer photoresist is processed to cleave at least some block copolymer bonds in the exposed selected regions. The exposed pinning layer is processed to create a chemical epitaxial pattern to direct the local self assembly of the block copolymer.
Abstract translation: 通过在衬底上沉积钉扎层来制成集成电路。 在钉扎层上形成嵌段共聚物光致抗蚀剂。 嵌段共聚物具有在至少一些退火条件下不自组装的两个嵌段A和B。 处理暴露的嵌段共聚物光致抗蚀剂以在暴露的所选区域中切割至少一些嵌段共聚物键。 处理暴露的钉扎层以产生化学外延图案以引导嵌段共聚物的局部自组装。
-
公开(公告)号:US20140322549A1
公开(公告)日:2014-10-30
申请号:US14211971
申请日:2014-03-14
Applicant: PIXELLIGENT TECHNOLOGIES LLC
Inventor: Wei XU , Selina Thomas MONICKAM , Jin-O CHOI , Xia BAI , Linfeng GOU , Zehra Serpil GONEN-WILLIAMS , Zhiyun CHEN , Gregory D. COOPER
IPC: C09D7/12
CPC classification number: C09D5/00 , C09D4/00 , C09D7/62 , Y10T428/31645 , Y10T428/31667 , Y10T428/31786 , Y10T428/31909 , Y10T428/31938 , C08F220/10
Abstract: The current disclosure relates to a nanocomposites coating including metal oxide nanocrystals, the nanocomposites further include a mixture of acrylates monomers and oligomers to provide a curable coating that provides high refractive index, high transmittance, and high temperature stability.
Abstract translation: 本公开涉及包括金属氧化物纳米晶体的纳米复合材料涂层,纳米复合材料还包括丙烯酸酯单体和低聚物的混合物,以提供提供高折射率,高透射率和高温稳定性的可固化涂层。
-
公开(公告)号:US20200083485A1
公开(公告)日:2020-03-12
申请号:US16685862
申请日:2019-11-15
Applicant: PIXELLIGENT TECHNOLOGIES, LLC
Inventor: Zhiyun CHEN , Gregory D. COOPER
Abstract: Light-emitting devices and methods of making the same are described whereby lenses of any array include a material with a higher refractive index than an encapsulation layer of a substrate layer, the refractive index of the material being in a range of greater than 1.7 to 1.9 at 400 nm. The material forming the lenses includes nanocomposite comprised of inorganic nanocrystals and a polymeric matrix, wherein the nanocrystals are selected from the group consisting of ZrO2, ZnO, MgO, HfO2, NbO5, Ta2O5 and Y2O3. A 3-4 micron thick sample of the nanocomposite has an optical transmittance of at least 80% over a range of 440 nm to 800 nm.
-
公开(公告)号:US20180342703A1
公开(公告)日:2018-11-29
申请号:US16035494
申请日:2018-07-13
Applicant: PIXELLIGENT TECHNOLOGIES LLC
Inventor: Zhiyun CHEN , Gregory D. COOPER
CPC classification number: H01L51/5275 , G02B3/0056 , G02B3/0087 , H01L27/3211 , H01L27/3244 , H01L51/5253
Abstract: This presently disclosed technology relates Organic Light Emitting Diodes (OLEDs), more particularly it relates to OLED display light extraction and nanocomposite formulations that can be used for the light extraction structure.
-
公开(公告)号:US20160149163A1
公开(公告)日:2016-05-26
申请号:US14903822
申请日:2014-07-08
Applicant: PIXELLIGENT TECHNOLOGIES LLC
Inventor: Zhiyun CHEN , Gregory D. COOPER
CPC classification number: H01L51/5275 , G02B3/0056 , G02B3/0087 , H01L27/3211 , H01L51/5253
Abstract: This presently disclosed technology relates to Organic Light Emitting Diodes (OLEDs), more particularly it relates to OLED display extraction and nanocomposite formulations that can be used for the light extraction structure. The OLEDs comprise, in order, an encapsulation layer or a substrate layer, an array of lenses, and an array of light emitting pixels at least partially covered by said array of lenses, wherein at least one of the lenses covers at least one of the pixel, and said lenses comprises a material with higher refractive index than the encapsulation layer or substrate layer.
Abstract translation: 本公开的技术涉及有机发光二极管(OLED),更具体地说,涉及可用于光提取结构的OLED显示提取和纳米复合材料制剂。 OLED依次包括封装层或衬底层,透镜阵列和至少部分被所述透镜阵列所覆盖的发光像素阵列,其中透镜中的至少一个覆盖至少一个透镜 像素,并且所述透镜包括具有比封装层或衬底层更高的折射率的材料。
-
公开(公告)号:US20150380239A1
公开(公告)日:2015-12-31
申请号:US14848104
申请日:2015-09-08
Applicant: Pixelligent Technologies, LLC
Inventor: Gregory D. COOPER , Brian L. WEHRENBERG
IPC: H01L21/027 , H01L21/324 , H01L27/04
CPC classification number: H01L21/0274 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/004 , G03F7/039 , G03F7/20 , G03F7/38 , H01L21/0271 , H01L21/324 , H01L21/82 , H01L27/04 , H01L29/06
Abstract: An integrated circuit is made by depositing a pinning layer on a substrate. A block copolymer photoresist is formed on the pinning layer. The block copolymer has two blocks A and B that do not self-assemble under at least some annealing conditions. The exposed block copolymer photoresist is processed to cleave at least some block copolymer bonds in the exposed selected regions. The exposed pinning layer is processed to create a chemical epitaxial pattern to direct the local self assembly of the block copolymer.
-
-
-
-
-
-
-
-
-