公开(公告)号：US20210305014A1

公开(公告)日：2021-09-30

申请号：US16886479

申请日：2020-05-28

Applicant: PSK INC.

Inventor： Geon Jong KIM ,  Tae Hwan YOUN ,  Jong Chan LEE

IPC: H01J37/32 ,  C23C16/458 ,  H01L21/67 ,  H01L21/687

Abstract: An apparatus for processing a substrate is provided. The apparatus for processing the substrate includes a housing having a process space, a gas supply unit to supply gas into the process space, a support unit including a chuck to support the substrate in the process space and a lower electrode to surround the chuck when viewed from a top, a temperature adjusting plate provided in the housing, a dielectric plate unit coupled to the temperature adjusting plate, and having a dielectric plate disposed in opposite to the substrate supported by the support unit in the process space, and an upper electrode unit coupled to the temperature adjusting plate, and having an upper electrode disposed in opposition to the lower electrode. The dielectric plate unit includes a first base disposed between the dielectric plate and the temperature adjusting plate.

公开(公告)号：US20250079133A1

公开(公告)日：2025-03-06

申请号：US18026619

申请日：2021-12-02

Applicant: PSK INC.

Inventor： Kwang Sung YOO ,  Tae Hwan YOUN ,  Geon Jong KIM

IPC: H01J37/32

Abstract: The present disclosure provides an apparatus for treating a substrate. The apparatus includes a chuck supporting the substrate, a gas supply unit configured to supply a process gas to an edge region of the substrate, and an edge electrode provided to surround the substrate supported by the chuck when viewed from a top and configured to generate plasma from the gas, in which the edge electrode has a ring shape and a groove recessed from an inner circumference of the edge electrode to an outer circumference of the edge electrode when viewed from the top is formed in the edge electrode.

公开(公告)号：US20210241997A1

公开(公告)日：2021-08-05

申请号：US16886543

申请日：2020-05-28

Applicant: PSK INC.

Inventor： Jong Chan LEE ,  Geon Jong KIM ,  Kwang Sung YOO ,  Seok June YUN

IPC: H01J37/32 ,  H01L21/687 ,  H05H1/46

Abstract: A substrate processing apparatus are provided. The substrate processing apparatus allows a supply flow rate per unit time for process gas supplied to the central area of a substrate to be greater than a supply flow rate per unit time for process gas supplied to an edge area of the substrate, when processing the edge area of the substrate supported by the chuck.