公开(公告)号：US20210305014A1

公开(公告)日：2021-09-30

申请号：US16886479

申请日：2020-05-28

Applicant: PSK INC.

Inventor： Geon Jong KIM ,  Tae Hwan YOUN ,  Jong Chan LEE

IPC: H01J37/32 ,  C23C16/458 ,  H01L21/67 ,  H01L21/687

Abstract: An apparatus for processing a substrate is provided. The apparatus for processing the substrate includes a housing having a process space, a gas supply unit to supply gas into the process space, a support unit including a chuck to support the substrate in the process space and a lower electrode to surround the chuck when viewed from a top, a temperature adjusting plate provided in the housing, a dielectric plate unit coupled to the temperature adjusting plate, and having a dielectric plate disposed in opposite to the substrate supported by the support unit in the process space, and an upper electrode unit coupled to the temperature adjusting plate, and having an upper electrode disposed in opposition to the lower electrode. The dielectric plate unit includes a first base disposed between the dielectric plate and the temperature adjusting plate.

公开(公告)号：US20210241997A1

公开(公告)日：2021-08-05

申请号：US16886543

申请日：2020-05-28

Applicant: PSK INC.

Inventor： Jong Chan LEE ,  Geon Jong KIM ,  Kwang Sung YOO ,  Seok June YUN

IPC: H01J37/32 ,  H01L21/687 ,  H05H1/46

Abstract: A substrate processing apparatus are provided. The substrate processing apparatus allows a supply flow rate per unit time for process gas supplied to the central area of a substrate to be greater than a supply flow rate per unit time for process gas supplied to an edge area of the substrate, when processing the edge area of the substrate supported by the chuck.

公开(公告)号：US20240297023A1

公开(公告)日：2024-09-05

申请号：US18026528

申请日：2021-12-02

Applicant: PSK INC.

Inventor： Kwang Sung YOO ,  Jong Chan LEE ,  Seong Min NAM

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32568 ,  H01J37/3244 ,  H01J37/32715 ,  H01L21/6831 ,  H01J2237/2007 ,  H01J2237/334

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a housing having an interior space, a lower electrode unit supporting a substrate in the interior space, an upper electrode unit facing the lower electrode unit, and a gas supply unit supplying a process gas to the interior space, wherein the upper electrode unit includes a dielectric plate facing an upper surface of the substrate supported by the lower electrode unit, a support body supporting the dielectric plate, wherein the support body and the dielectric plate are combined with each other to form a buffer space and the gas supply unit supplies the process gas to the interior space via the buffer space, and a baffle ring disposed on a flow path of the process gas flowing from the buffer space to the interior space.

公开(公告)号：US20240071783A1

公开(公告)日：2024-02-29

申请号：US18364626

申请日：2023-08-03

Applicant: PSK INC.

Inventor： Kwang Sung YOO ,  Jong Chan LEE

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/683

CPC classification number: H01L21/67069 ,  H01J37/32449 ,  H01J37/32568 ,  H01L21/3065 ,  H01L21/6833

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit configured to support a substrate at the treating space; and a gas supply unit configured to supply a gas which is excited to a plasma to the treating space, and wherein the support unit includes: a chuck supporting a center region of the substrate; and an edge electrode formed in a ring shape, and wherein the edge electrode includes: a body portion surrounding the chuck at an outer side of the chuck; and a protrusion portion formed protruding to an outer side of the body portion, and a hole is formed at the protrusion portion penetrating the protrusion portion and which exhausts an atmosphere of the treating space.