公开(公告)号：US4605946A

公开(公告)日：1986-08-12

申请号：US641146

申请日：1984-08-16

Applicant: Paul A. Robinson, Jr.

Inventor： Paul A. Robinson, Jr.

IPC: G01T1/29 ,  H01J49/02 ,  H01J49/28 ,  H01L29/49 ,  H01L29/788 ,  H01L29/78 ,  H01L27/14

CPC classification number: H01J49/28 ,  G01T1/2928 ,  H01J49/025 ,  H01L29/495 ,  H01L29/7881

Abstract: A MOSFET structure having a biased gate covered with an insulator of such a thickness as to render the structure capable of giving a measure of accumulated charge and usable in a stacked structure as a particle spectrometer.

Abstract translation: MOSFET结构，其具有被绝缘体覆盖的偏置栅极，该绝缘体具有这样的厚度，使得该结构能够提供累积电荷的量度并可用作堆叠结构中的粒子光谱仪。