公开(公告)号：US20020197761A1

公开(公告)日：2002-12-26

申请号：US10154150

申请日：2002-05-22

Applicant: REFLECTIVITY, INC.

Inventor： Satyadev R. Patel ,  Andrew G. Huibers ,  Gregory P. Schaadt ,  Peter J. Heureux

IPC: H01L021/00 ,  H01L021/302 ,  H01L021/461

CPC classification number: B81C1/00476 ,  B81C1/00547 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/112 ,  B82Y30/00

Abstract: An etching method, such as for forming a micromechanical device, is disclosed. One embodiment of the method is for releasing a micromechanical structure, comprising, providing a substrate; providing a sacrificial layer directly or indirectly on the substrate; providing one or more micromechanical structural layers on the sacrificial layer; performing a first etch to remove a portion of the sacrificial layer, the first etch comprising providing an etchant gas and energizing the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of the sacrificial layer; performing a second etch to remove additional sacrificial material in the sacrificial layer, the second etch comprising providing a gas that chemically but not physically etches the additional sacrificial material. Another embodiment of the method is for etching a silicon material on or within a substrate, comprising: performing a first etch to remove a portion of the silicon, the first etch comprising providing an etchant gas and energizing the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of silicon; performing a second etch to remove additional silicon, the second etch comprising providing an etchant gas that chemically but not physically etches the additional silicon.

Abstract translation: 公开了一种诸如用于形成微机械装置的蚀刻方法。 该方法的一个实施例是用于释放微机械结构，包括：提供衬底; 在衬底上直接或间接提供牺牲层; 在所述牺牲层上提供一个或多个微机械结构层; 执行第一蚀刻以去除牺牲层的一部分，所述第一蚀刻包括提供蚀刻剂气体并激发蚀刻剂气体，以允许蚀刻剂气体在物理或化学和物理上移除牺牲层的该部分; 执行第二蚀刻以去除牺牲层中的附加牺牲材料，第二蚀刻包括提供化学上但不物理蚀刻附加牺牲材料的气体。 该方法的另一实施例是用于在衬底上或衬底内蚀刻硅材料，包括：执行第一蚀刻以去除硅的一部分，第一蚀刻包括提供蚀刻剂气体并激发蚀刻剂气体以允许蚀刻剂 物理或化学和物理的气体去除硅的部分; 执行第二蚀刻以去除附加的硅，第二蚀刻包括提供蚀刻剂气体，其化学地但不物理地蚀刻附加的硅。

公开(公告)号：US20020196524A1

公开(公告)日：2002-12-26

申请号：US10155744

申请日：2002-05-24

Applicant: REFLECTIVITY, INC.

Inventor： Andrew G. Huibers ,  Peter J. Heureux ,  Satyadev R. Patel

IPC: G02B026/00

CPC classification number: G02B26/0841

Abstract: A spatial light modulator having a micromirror and one or more deflection limiting mechanisms, and a process for fabrication therefor. In one embodiment, the mirror support structure has a deflection stopping mechanism that limits the tilt angle of the reflective plate. Alternatively, a deflection stopping mechanism can be provided separate from the mirror support structure. The deflection stopping mechanism can be used in conjunction with one or more additional stopping mechanisms such as the abutment of a portion of the reflective plate against the substrate upon which it was constructed and/or abutment of the micromirror on a surface or structure of the circuit substrate.

Abstract translation: 具有微反射镜和一个或多个偏转限制机构的空间光调制器及其制造方法。 在一个实施例中，反射镜支撑结构具有限制反射板的倾斜角度的偏转停止机构。 或者，偏转止动机构可以与镜支撑结构分开设置。 偏转止动机构可以与一个或多个附加止动机构结合使用，例如反射板的一部分抵靠其上构造的基板和/或微镜在电路的表面或结构上的邻接 基质。