Abstract:
A method for forming metallurgical interconnections and polymer adhesion of a flip chip to a substrate includes providing a chip having a set of bumps formed on a bump side thereof and a substrate having a set of interconnect points on a metallization thereon, providing a measured quantity of a polymer adhesive in a middle region of the chip on the bump side, aligning the chip with the substrate so that the set of bumps aligns with the set of interconnect points, pressing the chip and the substrate toward one another so that a portion of the polymer adhesive contacts the substrate and the bumps contact the interconnect points, and heating the bumps to a temperature sufficiently high to form a metallurgical connection between the bumps and the interconnect points. Also, a flip chip package is made by the method. In some embodiments the metallurgical connection includes an alloy of gold and tin at the interface between the bumps and the interconnect points.
Abstract:
A flip chip interconnect pad layout has the die signal pads are arranged on the die surface near the perimeter of the die, and the die power and ground pads arranged on the die surface inboard from the signal pads; and has the signal pads on the corresponding package substrate arranged in a manner complementary to the die pad layout and the signal lines routed from the signal pads beneath the die edge away from the die footprint, and has the power and ground lines routed to vias beneath the die footprint. Also, a flip chip semiconductor package in which the flip chip interconnect pad layouts have the die signal pads situated in the marginal part of the die and the die power and ground pads arranged on the die surface inboard from the signal pads, and the corresponding package substrates have signal pads arranged in a manner complementary to the die pad layout and signal lines routed from the signal pads beneath the die edge away from the die footprint.
Abstract:
A chip package achieves miniaturization and excellent high-speed operation by employing flip chip interconnection between the die and the package substrate, and mounting the chip on the same side of the package substrate as the solder balls for the second level interconnection to the printed circuit board. Also, two-die packages have a first die attached to the same surface as the second level interconnect structures and connected using flip chip interconnection, and a second die connected to the opposite surface of the substrate and interconnected either by wire bonding or by flip chip interconnection.
Abstract:
A solder mask for flip chip interconnection has a common opening that spans a plurality of circuit elements. The solder mask allows confinement of the solder during the remelt stage of interconnection, yet it is within common design rules for solder mask patterning. Also, a substrate for flip chip interconnection includes a substrate having the common opening that spans a plurality of circuit elements. Also, a flip chip package includes a substrate having a common opening that spans a plurality of circuit elements.
Abstract:
A flip chip interconnect pad layout has the die signal pads are arranged on the die surface near the perimeter of the die, and the die power and ground pads arranged on the die surface inboard from the signal pads; and has the signal pads on the corresponding package substrate arranged in a manner complementary to the die pad layout and the signal lines routed from the signal pads beneath the die edge away from the die footprint, and has the power and ground lines routed to vias beneath the die footprint. Also, a flip chip semiconductor package in which the flip chip interconnect pad layouts have the die signal pads situated in the marginal part of the die and the die power and ground pads arranged on the die surface inboard from the signal pads, and the corresponding package substrates have signal pads arranged in a manner complementary to the die pad layout and signal lines routed from the signal pads beneath the die edge away from the die footprint.
Abstract:
A flip chip interconnect pad layout has the die signal pads are arranged on the die surface near the perimeter of the die, and the die power and ground pads arranged on the die surface inboard from the signal pads; and has the signal pads on the corresponding package substrate arranged in a manner complementary to the die pad layout and the signal lines routed from the signal pads beneath the die edge away from the die footprint, and has the power and ground lines routed to vias beneath the die footprint. Also, a flip chip semiconductor package in which the flip chip interconnect pad layouts have the die signal pads situated in the marginal part of the die and the die power and ground pads arranged on the die surface inboard from the signal pads, and the corresponding package substrates have signal pads arranged in a manner complementary to the die pad layout and signal lines routed from the signal pads beneath the die edge away from the die footprint.
Abstract:
A flip chip interconnect has a tapering interconnect structure, and the area of contact of the interconnect structure with the site on the substrate metallization is less than the area of contact of the interconnect structure with the die pad. A solder mask has an opening over the interconnect site, and the solder mask makes contact with the interconnect structure, or is in close proximity to the interconnect structure, at the margin of the opening. The flip chip interconnect is provided with an underfill. During the underfill process, the contact (or near proximity) of the solder mask with the interconnect structure interferes with flow of the underfill material toward the substrate adjacent the site, resulting in formation of a void left unfilled by the underfill, adjacent the contact of the interconnect structure with the site on the substrate metallization. The void can help provide relief from strain induced by changes in temperature of the system.
Abstract:
An integrated circuit package system includes providing a substrate having a bond finger thereon and forming a pedestal on a portion of the bond finger. A first die is mounted on the substrate and adjacent to the bond finger. A portion of the first die, a portion of the bond finger, and a portion of the pedestal are embedded in an resin layer with an exposed portion of the pedestal protruding from the resin layer. A second die is mounted on the first die and electrically coupled to the exposed portion of the pedestal.
Abstract:
A flip chip interconnect has a tapering interconnect structure, and the area of contact of the interconnect structure with the site on the substrate metallization is less than the area of contact of the interconnect structure with the die pad. Also, a bond-on-lead or bond-on-narrow pad or bond on a small area of a contact pad interconnection includes such tapering flip chip interconnects. Also, methods for making the interconnect structure include providing a die having interconnect pads, providing a substrate having interconnect sites on a patterned conductive layer, providing a bump on a die pad, providing a fusible electrically conductive material either at the interconnect site or on the bump, mating the bump to the interconnect site, and heating to melt the fusible material.
Abstract:
A flip chip interconnect of a die on a substrate is made by mating the interconnect bump onto a narrow interconnect pad on a lead or trace, rather than onto a capture pad. The width of the narrow interconnect pad is less than a base diameter of bumps on the die to be attached. Also, a flip chip package includes a die having solder bumps attached to interconnect pads in an active surface, and a substrate having narrow interconnect pads on electrically conductive traces in a die attach surface, in which the bumps are mated onto the narrow pads on the traces.