公开(公告)号：US20080087839A1

公开(公告)日：2008-04-17

申请号：US11550140

申请日：2006-10-17

Applicant: Rajesh DORAI

Inventor： Rajesh DORAI

IPC: H01J1/50

CPC classification number: H01J37/3266 ,  H01J37/32412 ,  H01J2237/0045

Abstract: A technique for confining secondary electrons on a wafer is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for confining secondary electrons in plasma-based ion implantation. The apparatus and method may comprise a magnetic field portion of a magnetic field configuration placed under a target wafer for generating a magnetic field above the target wafer for confining secondary electrons on the target wafer. The apparatus and method may also comprise a magnetic field above the target wafer that is substantially parallel to an upper surface of the target wafer. The apparatus and method may additionally comprise a magnetic field portion comprising at least one of a plurality of coils, one or more current-carrying wires, and a plurality of magnets.

Abstract translation: 公开了一种限制二次电子在晶片上的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于限制基于等离子体的离子注入中的二次电子的装置和方法。 该装置和方法可以包括放置在目标晶片之下的磁场结构的磁场部分，用于在目标晶片上产生用于限制目标晶片上的二次电子的磁场。 该装置和方法还可以包括基本上平行于目标晶片的上表面的目标晶片上方的磁场。 该装置和方法可以另外包括磁场部分，其包括多个线圈，一个或多个载流导线和多个磁体中的至少一个。

公开(公告)号：US20090314962A1

公开(公告)日：2009-12-24

申请号：US12143144

申请日：2008-06-20

Applicant: Rajesh DORAI ,  Peter F. Kurunczi ,  Alexander S. Perel ,  Wilhelm P. Platow

Inventor： Rajesh DORAI ,  Peter F. Kurunczi ,  Alexander S. Perel ,  Wilhelm P. Platow

IPC: H01J37/08 ,  G02B5/00

CPC classification number: H01J37/3171 ,  H01J37/04 ,  H01J37/08 ,  H01J37/09 ,  H01J2237/024 ,  H01J2237/0455 ,  H01J2237/08 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/24542

Abstract: An electrode assembly for use with an ion source chamber or as part of an ion implanter processing system to provide a uniform ion beam profile. The electrode assembly includes an electrode having an extraction slot with length L aligned with an aperture of the ion source chamber for extracting an ion beam. The electrode includes a plurality of segments partitioned within the length of the extraction slot where each of the segments is configured to be displaced in at least one direction with respect to the ion beam. A plurality of actuators are connected to the plurality of electrode segments for displacing one or more of the segments. By displacing at least one of the plurality of electrode segments, the current density of a portion of the ion beam corresponding to the position of the segment within the extraction slot is modified to provide a uniform current density beam profile associated with the extracted ion beam.

Abstract translation: 一种与离子源室一起使用或作为离子注入机处理系统的一部分以提供均匀离子束分布的电极组件。 电极组件包括具有长度为L的提取槽的电极，其与用于提取离子束的离子源室的孔径对准。 电极包括在提取槽的长度内分隔的多个段，其中每个段被配置为相对于离子束在至少一个方向上移位。 多个致动器连接到多个电极段，用于移动一个或多个段。 通过移位多个电极段中的至少一个，修改与提取槽内的段的位置相对应的一部分离子束的电流密度，以提供与提取的离子束相关联的均匀的电流密度波束轮廓。