公开(公告)号：US11851785B2

公开(公告)日：2023-12-26

申请号：US17326615

申请日：2021-05-21

Applicant: Raytheon Company

Inventor： Andrew Clarke ,  David R. Rhiger ,  George Grama ,  Stuart B. Farrell

IPC: H01L31/18 ,  C30B25/18 ,  C30B29/40 ,  C30B29/60

CPC classification number: C30B25/183 ,  C30B29/403 ,  C30B29/605 ,  H01L31/1832 ,  H01L31/1868

Abstract: An electrical device includes an aluminum nitride passivation layer for a mercury cadmium telluride (Hg1-xCdxTe) (MCT) semiconductor layer of the device. The AlN passivation layer may be an un-textured amorphous-to-polycrystalline film that is deposited onto the surface of the MCT in its as-grown state, or overlying the MCT after the MCT surface has been pre-treated or partially passivated, in this way fully passivating the MCT. The AlN passivation layer may have a coefficient of thermal expansion (CTE) that closely matches the CTE of the MCT layer, thereby reducing strain at an interface to the MCT. The AlN passivation layer may be formed with a neutral inherent (residual) stress, provide mechanical rigidity, and chemical resistance to protect the MCT.

公开(公告)号：US20230082114A1

公开(公告)日：2023-03-16

申请号：US17475962

申请日：2021-09-15

Applicant: Raytheon Company

Inventor： Andrew Clarke ,  David R. Rhiger ,  Chad W. Fulk ,  Stuart B. Farrell ,  James Pattison ,  Jeffrey M. Peterson ,  Chad M. Althouse

IPC: H01L31/18 ,  H01L31/0296 ,  H01L31/0224

Abstract: In one aspect, a method includes forming an electrical path between p-type mercury cadmium telluride and a metal layer. The forming of the electrical path includes depositing a layer of polycrystalline p-type silicon directly on to the p-type mercury cadmium telluride and forming the metal layer on the layer of polycrystalline p-type silicon. In another aspect, an apparatus includes an electrical path. The electrical path includes a p-type mercury cadmium telluride layer, a polycrystalline p-type silicon layer in direct contact with the p-type mercury cadmium telluride layer, a metal silicide in direct contact with the polycrystalline p-type silicon layer, and an electrically conductive metal on the metal silicide. In operation, holes, indicative of electrical current on the electrical path, flow from the p-type mercury cadmium telluride layer to the electrically conductive metal.

公开(公告)号：US11817521B2

公开(公告)日：2023-11-14

申请号：US17475962

申请日：2021-09-15

Applicant: Raytheon Company

Inventor： Andrew Clarke ,  David R. Rhiger ,  Chad W. Fulk ,  Stuart B. Farrell ,  James Pattison ,  Jeffrey M. Peterson ,  Chad M. Althouse

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/0296

CPC classification number: H01L31/1832 ,  H01L31/02966 ,  H01L31/022408 ,  H01L31/1864

Abstract: In one aspect, a method includes forming an electrical path between p-type mercury cadmium telluride and a metal layer. The forming of the electrical path includes depositing a layer of polycrystalline p-type silicon directly on to the p-type mercury cadmium telluride and forming the metal layer on the layer of polycrystalline p-type silicon. In another aspect, an apparatus includes an electrical path. The electrical path includes a p-type mercury cadmium telluride layer, a polycrystalline p-type silicon layer in direct contact with the p-type mercury cadmium telluride layer, a metal silicide in direct contact with the polycrystalline p-type silicon layer, and an electrically conductive metal on the metal silicide. In operation, holes, indicative of electrical current on the electrical path, flow from the p-type mercury cadmium telluride layer to the electrically conductive metal.

公开(公告)号：US20220372651A1

公开(公告)日：2022-11-24

申请号：US17326615

申请日：2021-05-21

Applicant: Raytheon Company

Inventor： Andrew Clarke ,  David R. Rhiger ,  George Grama ,  Stuart B. Farrell

IPC: C30B25/18 ,  C30B29/60 ,  C30B29/40 ,  H01L31/18

Abstract: An electrical device includes an aluminum nitride passivation layer for a mercury cadmium telluride (Hg1-xCdxTe) (MCT) semiconductor layer of the device. The AlN passivation layer may be an un-textured amorphous-to-polycrystalline film that is deposited onto the surface of the MCT in its as-grown state, or overlying the MCT after the MCT surface has been pre-treated or partially passivated, in this way fully passivating the MCT. The AlN passivation layer may have a coefficient of thermal expansion (CTE) that closely matches the CTE of the MCT layer, thereby reducing strain at an interface to the MCT. The AlN passivation layer may be formed with a neutral inherent (residual) stress, provide mechanical rigidity, and chemical resistance to protect the MCT.