VIBRATOR DEVICE AND ELECTRONIC APPARATUS
    2.
    发明申请

    公开(公告)号:US20200382095A1

    公开(公告)日:2020-12-03

    申请号:US16886901

    申请日:2020-05-29

    Abstract: A vibrator device includes a silicon substrate having a through hole, a first terminal placed on a first surface of the silicon substrate, a second terminal placed on a second surface opposite to the first surface of the silicon substrate, a wire passing the through hole and electrically coupling the first terminal and the second terminal, a resin layer placed between the wire and an inner wall defining the through hole, a silicon oxide layer placed between the resin layer and the inner wall, and a vibrator element bonded to the first terminal.

    PHYSICAL QUANTITY SENSOR, PRESSURE SENSOR, ALTIMETER, ELECTRONIC APPARATUS, AND MOVING OBJECT
    3.
    发明申请
    PHYSICAL QUANTITY SENSOR, PRESSURE SENSOR, ALTIMETER, ELECTRONIC APPARATUS, AND MOVING OBJECT 有权
    物理量传感器,压力传感器,高精度测量仪,电子设备和移动对象

    公开(公告)号:US20150168242A1

    公开(公告)日:2015-06-18

    申请号:US14573537

    申请日:2014-12-17

    Inventor: Yusuke MATSUZAWA

    Abstract: A physical quantity sensor includes a semiconductor substrate, a diaphragm section that is disposed on the semiconductor substrate and is flexurally deformed when receiving pressure, a sensor element that is disposed on the diaphragm section, an element-periphery structure member that is disposed on one surface side of the semiconductor substrate and forms a cavity section together with the diaphragm section, and a semiconductor circuit that is provided on the same surface side as the element-periphery structure member of the semiconductor substrate.

    Abstract translation: 物理量传感器包括半导体衬底,设置在半导体衬底上并在接受压力时弯曲变形的隔膜部分,设置在隔膜部分上的传感器元件,设置在一个表面上的元件周边结构构件 并且与隔膜部分一起形成空腔部分,以及设置在与半导体基板的元件周边结构部件相同的表面侧的半导体电路。

    Method For Manufacturing Vibration Device

    公开(公告)号:US20250109014A1

    公开(公告)日:2025-04-03

    申请号:US18897401

    申请日:2024-09-26

    Inventor: Yusuke MATSUZAWA

    Abstract: A method for manufacturing a vibration device includes: preparing a base including a semiconductor substrate having a first surface, on which a circuit element is formed, and a second surface, and a first insulating layer disposed on the first surface of the semiconductor substrate and covering the circuit element; forming a second insulating layer by depositing an insulator on a fifth surface of the first insulating layer on a side opposite to the semiconductor substrate; planarizing at least a part of a third surface of the second insulating layer on a side opposite to the base by polishing; forming a mount electrode on the polished third surface of the second insulating layer; and bonding a vibration element to the mount electrode.

    MEMS DEVICE, PRESSURE SENSOR, ALTIMETER, ELECTRONIC APPARATUS, AND MOVING OBJECT
    8.
    发明申请
    MEMS DEVICE, PRESSURE SENSOR, ALTIMETER, ELECTRONIC APPARATUS, AND MOVING OBJECT 审中-公开
    MEMS器件,压力传感器,高精度计,电子设备和移动物体

    公开(公告)号:US20150217989A1

    公开(公告)日:2015-08-06

    申请号:US14601615

    申请日:2015-01-21

    Inventor: Yusuke MATSUZAWA

    CPC classification number: B81B3/0054 B81B2201/0264 B81B2201/0292 G01L9/0054

    Abstract: A MEMS device includes: a substrate; a sensor element (functional element) that is disposed above the substrate; a surrounding wall that is disposed above one surface side of the substrate and surrounds the sensor element in a plan view; a covering layer that overlaps the substrate in the plan view and is connected to the surrounding wall; and a reinforcing layer that is arranged between the covering layer and the sensor element. The surrounding wall includes a substrate-side surrounding wall, and a covering layer-side surrounding wall that is located on the covering layer side of the substrate-side surrounding wall and at least a portion of which is disposed above the inside of the substrate-side surrounding wall in the plan view.

    Abstract translation: MEMS器件包括:衬底; 设置在所述基板上方的传感器元件(功能元件) 设置在所述基板的一个表面侧的周围的壁,并且在俯视图中围绕所述传感器元件; 在平面图中与基板重叠并连接到周围壁的覆盖层; 以及布置在所述覆盖层和所述传感器元件之间的加强层。 周围壁包括基板侧围绕壁和覆盖层侧围壁,其位于基板侧围壁的覆盖层侧,并且至少一部分设置在基板侧周围壁的内侧, 侧面的围墙在平面图。

    MEMS ELEMENT, ELECTRONIC DEVICE, ALTIMETER, ELECTRONIC APPARATUS, AND MOVING OBJECT
    9.
    发明申请
    MEMS ELEMENT, ELECTRONIC DEVICE, ALTIMETER, ELECTRONIC APPARATUS, AND MOVING OBJECT 有权
    MEMS元件,电子设备,高精度计,电子设备和移动物体

    公开(公告)号:US20140157893A1

    公开(公告)日:2014-06-12

    申请号:US14097526

    申请日:2013-12-05

    CPC classification number: G01C5/06

    Abstract: A MEMS element includes a substrate which includes a flexible portion, a fixation electrode which is provided on a principal surface of the substrate, and a movable electrode which includes a movable portion which is separated from the fixation electrode, overlaps with at least a portion of the fixation electrode in a plan view of the principal surface, and is driven in a direction intersecting the principal surface, and a fixation end connected to the principal surface. The fixation electrode and the movable electrode is disposed to correspond to the flexible portion.

    Abstract translation: MEMS元件包括:基板,其包括柔性部分,设置在基板的主表面上的固定电极以及包括与固定电极分离的可动部分的可动电极与至少一部分 所述固定电极在所述主表面的平面图中,并且在与所述主表面相交的方向上被驱动,并且固定端连接到所述主表面。 固定电极和可动电极设置成对应于柔性部分。

    Resonator Device And Method For Manufacturing Resonator Device

    公开(公告)号:US20220239274A1

    公开(公告)日:2022-07-28

    申请号:US17583489

    申请日:2022-01-25

    Inventor: Yusuke MATSUZAWA

    Abstract: A resonator device includes a base and a resonator component disposed on the base. The base includes a semiconductor substrate having a first surface and a second surface that are in a front-to-back relation with each other; an integrated circuit that includes a wiring layer disposed at the second surface side and including a connection pad and includes an insulating layer disposed between the second surface and the wiring layer; a through electrode that penetrates the semiconductor substrate and the insulating layer and is coupled to the connection pad; and an annular metal layer that is disposed so as to penetrate the insulating layer between the second surface and the wiring layer and surrounds the through electrode in a plan view of the semiconductor substrate.

Patent Agency Ranking