Abstract:
A pressure sensor includes a substrate which includes a diaphragm that is flexurally deformed by receiving a pressure, a piezoresistive element which is provided in the diaphragm; and a protective film which is provided on one surface side of the diaphragm. The protective film includes a thin section and a thick section which is thicker than the thin section. Further, in a plan view of the substrate, the thin section overlaps with the piezoresistive element, and the thick section overlaps with at least a part of the diaphragm.
Abstract:
A vibrator device includes a silicon substrate having a through hole, a first terminal placed on a first surface of the silicon substrate, a second terminal placed on a second surface opposite to the first surface of the silicon substrate, a wire passing the through hole and electrically coupling the first terminal and the second terminal, a resin layer placed between the wire and an inner wall defining the through hole, a silicon oxide layer placed between the resin layer and the inner wall, and a vibrator element bonded to the first terminal.
Abstract:
A physical quantity sensor includes a semiconductor substrate, a diaphragm section that is disposed on the semiconductor substrate and is flexurally deformed when receiving pressure, a sensor element that is disposed on the diaphragm section, an element-periphery structure member that is disposed on one surface side of the semiconductor substrate and forms a cavity section together with the diaphragm section, and a semiconductor circuit that is provided on the same surface side as the element-periphery structure member of the semiconductor substrate.
Abstract:
A method for manufacturing a vibration device includes: preparing a base including a semiconductor substrate having a first surface, on which a circuit element is formed, and a second surface, and a first insulating layer disposed on the first surface of the semiconductor substrate and covering the circuit element; forming a second insulating layer by depositing an insulator on a fifth surface of the first insulating layer on a side opposite to the semiconductor substrate; planarizing at least a part of a third surface of the second insulating layer on a side opposite to the base by polishing; forming a mount electrode on the polished third surface of the second insulating layer; and bonding a vibration element to the mount electrode.
Abstract:
A pressure sensor includes a substrate which has a diaphragm that is flexurally deformed by receiving a pressure, a side wall section which is placed on one surface side of the substrate and surrounds the diaphragm in a plan view, and a sealing layer which is placed so as to face the diaphragm through a space surrounded by the side wall section and seals the space, wherein the sealing layer includes a first silicon layer, a second silicon layer which is located on the opposite side to the substrate with respect to the first silicon layer, and a silicon oxide layer which is located between the first silicon layer and the second silicon layer, and the silicon oxide layer is sealed from the outside by being covered with the second silicon layer.
Abstract:
A pressure sensor includes a silicon substrate which has a diaphragm, a frame-shaped side wall section which is placed on one surface side of the silicon substrate so as to surround the diaphragm in a plan view, a lid section which is placed so as to cover an opening of the side wall section and has a through-hole communicating inside and outside the side wall section, a sealing section which is placed on the lid section and seals the through-hole, and a pressure reference chamber which is defined by the silicon substrate, the side wall section, the lid section, and the sealing section, wherein a surface facing the pressure reference chamber of each of the side wall section and the lid section contains a silicon material.
Abstract:
A physical quantity sensor includes a semiconductor substrate, a diaphragm section that is disposed on the semiconductor substrate and is flexurally deformed when receiving pressure, a sensor element that is disposed on the diaphragm section, an element-periphery structure member that is disposed on one surface side of the semiconductor substrate and forms a cavity section together with the diaphragm section, and a semiconductor circuit that is provided on the same surface side as the element-periphery structure member of the semiconductor substrate.
Abstract:
A MEMS device includes: a substrate; a sensor element (functional element) that is disposed above the substrate; a surrounding wall that is disposed above one surface side of the substrate and surrounds the sensor element in a plan view; a covering layer that overlaps the substrate in the plan view and is connected to the surrounding wall; and a reinforcing layer that is arranged between the covering layer and the sensor element. The surrounding wall includes a substrate-side surrounding wall, and a covering layer-side surrounding wall that is located on the covering layer side of the substrate-side surrounding wall and at least a portion of which is disposed above the inside of the substrate-side surrounding wall in the plan view.
Abstract:
A MEMS element includes a substrate which includes a flexible portion, a fixation electrode which is provided on a principal surface of the substrate, and a movable electrode which includes a movable portion which is separated from the fixation electrode, overlaps with at least a portion of the fixation electrode in a plan view of the principal surface, and is driven in a direction intersecting the principal surface, and a fixation end connected to the principal surface. The fixation electrode and the movable electrode is disposed to correspond to the flexible portion.
Abstract:
A resonator device includes a base and a resonator component disposed on the base. The base includes a semiconductor substrate having a first surface and a second surface that are in a front-to-back relation with each other; an integrated circuit that includes a wiring layer disposed at the second surface side and including a connection pad and includes an insulating layer disposed between the second surface and the wiring layer; a through electrode that penetrates the semiconductor substrate and the insulating layer and is coupled to the connection pad; and an annular metal layer that is disposed so as to penetrate the insulating layer between the second surface and the wiring layer and surrounds the through electrode in a plan view of the semiconductor substrate.