公开(公告)号：US20220316088A1

公开(公告)日：2022-10-06

申请号：US17706669

申请日：2022-03-29

Applicant: Seiko Epson Corporation

Inventor： Hiroyuki SHIMADA

IPC: C30B23/02 ,  H01L33/00 ,  C30B23/00 ,  C23C14/28 ,  C23C14/54 ,  C23C14/06 ,  C30B29/40

Abstract: A molecular beam epitaxial growth apparatus of the present disclosure includes a stage, a first molecular beam source irradiates a substrate surface with a first molecular beam, a second molecular beam source irradiates the substrate surface with a second molecular beam, a shutter shields the first molecular beam or the second molecular beam, and a control unit controls the shutter and relative positions of the stage with respect to the first molecular beam source and the second molecular beam source. The radiation direction of the first molecular beam emitted from the first molecular beam source and the radiation direction of the second molecular beam emitted from the second molecular beam source are vertical to the substrate surface. Under the control of the control unit, the second molecular beam is shielded while the first molecular beam is radiated on the substrate surface, and the first molecular beam is shielded while the second molecular beam is radiated on the substrate surface.

公开(公告)号：US20210273135A1

公开(公告)日：2021-09-02

申请号：US17186080

申请日：2021-02-26

Applicant: Seiko Epson Corporation

Inventor： Hiroyuki SHIMADA

IPC: H01L33/32 ,  H01L33/38 ,  H01L33/54 ,  G03B21/20

Abstract: A light emitting apparatus includes a substrate, a laminated structure provided at the substrate and including a plurality of columnar sections, and an electrode provided on the side opposite the substrate with respect to the laminated structure and injecting current into the laminated structure. The columnar sections each include an n-type first GaN layer, a p-type second GaN layer, and a light emitting layer provided between the first GaN layer and the second GaN layer. The first GaN layers are provided between the light emitting layers and the substrate. The laminated structure includes a p-type first AlGaN layer. The first AlGaN layer includes a first section provided between the second GaN layers of the columnar sections adjacent to each other and a second section provided between the first section and the electrode and between the columnar sections and the electrode.

公开(公告)号：US20170052081A1

公开(公告)日：2017-02-23

申请号：US15234360

申请日：2016-08-11

Applicant: Seiko Epson Corporation

Inventor： Hiroyuki SHIMADA

IPC: G01L9/00 ,  G01C5/06

CPC classification number: G01L9/0054 ,  G01L9/065 ,  G01L19/04

Abstract: A pressure sensor includes a pressure sensor device including a diaphragm that undergoes bending deformation under pressure and a sensor section disposed on the diaphragm and a pressure sensor device including a diaphragm that undergoes bending deformation under pressure and a sensor section disposed on the diaphragm, and one of the sensor sections has a positive temperature characteristic, and the other has a negative temperature characteristic.

Abstract translation: 压力传感器包括：压力传感器装置，包括在压力下经受弯曲变形的隔膜和设置在隔膜上的传感器部分;以及压力传感器装置，包括在压力下经历弯曲变形的隔膜和设置在隔膜上的传感器部分， 的传感器部分具有正温度特性，另一个具有负温度特性。

公开(公告)号：US20140217424A1

公开(公告)日：2014-08-07

申请号：US14252341

申请日：2014-04-14

Applicant: SEIKO EPSON CORPORATION

Inventor： Hiroyuki SHIMADA

IPC: H01L29/16

CPC classification number: H01L29/1608 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/0692 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/7835

Abstract: A semiconductor device includes a silicon substrate, a silicon carbide film formed on the silicon substrate, a mask member formed on a surface of the silicon carbide film, and having an opening section, single-crystal silicon carbide films each having grown epitaxially from the silicon carbide film exposed in the opening section as a base point, and covering the silicon carbide film and the mask member, and a semiconductor element formed on surfaces of the single-crystal silicon carbide films, an assembly section formed of the single-crystal silicon carbide films assembled to each other exists above the mask member, the semiconductor element has a body contact region, and the body contact region is disposed at a position overlapping the assembly section viewed from a direction perpendicular to the surface of the silicon substrate.

Abstract translation: 半导体器件包括硅衬底，形成在硅衬底上的碳化硅膜，形成在碳化硅膜的表面上的掩模构件，并且具有开口部，每个都从硅生长外延生长的单晶碳化硅膜 以开口部为露点的碳化物膜为基点，覆盖碳化硅膜和掩模部件，形成在单晶碳化硅膜表面的半导体元件，由单晶碳化硅形成的组装部 彼此组装的膜存在于掩模构件上方，半导体元件具有本体接触区域，并且本体接触区域设置在从与硅衬底的表面垂直的方向观察的与组装部分重叠的位置处。

公开(公告)号：US20230025796A1

公开(公告)日：2023-01-26

申请号：US17868805

申请日：2022-07-20

Applicant: SEIKO EPSON CORPORATION

Inventor： Hiroyuki SHIMADA

IPC: H01L29/778 ,  H01L29/20 ,  H01L21/02 ,  H01L21/306 ,  H01L21/78 ,  H01L29/66

Abstract: A semiconductor device includes a plurality of column portions including a semiconductor. The plurality of column portions each includes a source region, a drain region, and a channel formation region including a channel formed between the source region and the drain region. The semiconductor device further includes a gate electrode provided, via an insulating layer, at a side wall of the channel formation region, and also includes a first semiconductor layer provided at a side wall of the drain region. A conductive type of the first semiconductor layer differs from a conductive type of the semiconductor included in the drain region.

公开(公告)号：US20170267518A1

公开(公告)日：2017-09-21

申请号：US15443320

申请日：2017-02-27

Applicant: SEIKO EPSON CORPORATION

Inventor： Takuya KINUGAWA ,  Yusuke MATSUZAWA ,  Hiroyuki SHIMADA

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0038 ,  B81B2201/0264 ,  B81B2201/0292 ,  B81B2203/0127 ,  B81C1/00182 ,  B81C1/00666 ,  B81C2203/019

Abstract: A pressure sensor includes a silicon substrate which has a diaphragm, a frame-shaped side wall section which is placed on one surface side of the silicon substrate so as to surround the diaphragm in a plan view, a lid section which is placed so as to cover an opening of the side wall section and has a through-hole communicating inside and outside the side wall section, a sealing section which is placed on the lid section and seals the through-hole, and a pressure reference chamber which is defined by the silicon substrate, the side wall section, the lid section, and the sealing section, wherein a surface facing the pressure reference chamber of each of the side wall section and the lid section contains a silicon material.

公开(公告)号：US20170276562A1

公开(公告)日：2017-09-28

申请号：US15459443

申请日：2017-03-15

Applicant: Seiko Epson Corporation

Inventor： Hiroyuki SHIMADA

IPC: G01L9/00 ,  C23C16/44 ,  C23C14/34 ,  G01C5/06

CPC classification number: G01L9/0044 ,  C23C8/28 ,  C23C8/34 ,  C23C8/36 ,  C23C14/34 ,  C23C16/44 ,  G01C5/06 ,  G01L9/0042 ,  G01L9/0055

Abstract: A pressure sensor includes a flexible diaphragm which is flexed by pressure changes and a coating layer on one surface of the diaphragm. The diaphragm is a single layer containing silicon, nitrogen, and oxygen. Further, the coating layer contains silicon oxynitride. Also, the coating layer has a nitrogen concentration distribution that varies across the thickness of the coating layer.

公开(公告)号：US20170179967A1

公开(公告)日：2017-06-22

申请号：US15378440

申请日：2016-12-14

Applicant: Seiko Epson Corporation

Inventor： Yoshiyuki MAKI ,  Hiroyuki SHIMADA

IPC: H03L7/26 ,  G01S19/37 ,  H03L1/02

CPC classification number: H03L7/26 ,  G01S19/14 ,  G01S19/37 ,  G01S19/39 ,  G04F5/14 ,  G04R40/02 ,  H03L1/027 ,  H03L7/099 ,  H03L7/183

Abstract: A timing signal generation device includes a GPS receiver, an atomic oscillator, a phase comparator, a loop filter, and a divider, a temperature sensor, a DDS, and a DSP. The GPS receiver outputs a reference timing signal. The atomic oscillator outputs a clock signal in accordance with an input voltage value. The phase comparator, the loop filter, and the divider adjust the voltage value in accordance with a synchronization status between the reference timing signal and the clock signal. The temperature sensor outputs a signal depending on the temperature of the atomic oscillator. The DDS converts the frequency of the clock signal and outputs a signal obtained by converting the frequency. The DSP controls the DDS based on an output of the temperature sensor.

公开(公告)号：US20230317817A1

公开(公告)日：2023-10-05

申请号：US18191177

申请日：2023-03-28

Applicant: SEIKO EPSON CORPORATION

Inventor： Hiroyuki SHIMADA

IPC: H01L29/51 ,  H01L29/78

CPC classification number: H01L29/517 ,  H01L29/7827

Abstract: A semiconductor device includes a first semiconductor portion and a second semiconductor portion having the same conductivity type and arranged along a first direction, a third semiconductor portion provided between the first semiconductor portion and the second semiconductor portion and having a lower impurity concentration than the first semiconductor portion and the second semiconductor portion, a fourth semiconductor portion provided between the second semiconductor portion and the third semiconductor portion and having a lower impurity concentration than the first semiconductor portion and the second semiconductor portion, a gate insulating layer and a gate electrode provided in a second direction of the third semiconductor portion, the second direction intersecting the first direction, and a dielectric portion provided in the second direction of the fourth semiconductor portion, wherein the dielectric portion is formed of a material having a larger band gap and a larger relative permittivity than a material forming the fourth semiconductor portion, and a depletion layer is formed at the fourth semiconductor portion when a predetermined voltage is applied to the gate electrode.

公开(公告)号：US20230028402A1

公开(公告)日：2023-01-26

申请号：US17868806

申请日：2022-07-20

Applicant: SEIKO EPSON CORPORATION

Inventor： Hiroyuki SHIMADA

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/41

Abstract: A semiconductor device includes a plurality of column portions made of a semiconductor. The plurality of column portions each include a source region, a drain region, and a channel formation region including a channel formed between the source region and the drain region. The semiconductor device further includes: a gate electrode provided at a side wall of the channel formation region with an insulating layer being interposed between the gate electrode and the side wall; a first semiconductor layer coupled to either one of the source region and the drain region of each of the plurality of column portions; and a first metal layer coupled to the first semiconductor layer.