公开(公告)号：US20230317435A1

公开(公告)日：2023-10-05

申请号：US18113158

申请日：2023-02-23

Applicant: SEMES CO., LTD.

Inventor： Sunjoo PARK ,  Hyunjong SHIM ,  Sangmin MUN ,  Kyungseok MIN ,  Hwan JUNG ,  Nayeon LEE

IPC: H01J37/32 ,  G01J3/443

CPC classification number: H01J37/32807 ,  H01J37/32724 ,  G01J3/443 ,  H01J37/32862 ,  H01L21/3065

Abstract: Provided is a substrate processing apparatus including a chamber having a processing space therein, a supporting unit arranged in the processing space, having a substrate located thereon, and including a label material layer including a label material therein, a plasma source configured to generate plasma from a processing gas in the processing space, and a measurement apparatus configured to detect the label material, wherein, when the supporting unit is etched to a depth that is greater than or equal to a first depth, the label material layer is exposed.

公开(公告)号：US20230407177A1

公开(公告)日：2023-12-21

申请号：US18332233

申请日：2023-06-09

Applicant: SEMES CO., LTD.

Inventor： Kyungseok MIN ,  Hyunjong SHIM ,  Sangmin MUN ,  Sunjoo PARK ,  Hwan JUNG ,  Nayeon LEE

IPC: C09K13/00

CPC classification number: C09K13/00

Abstract: An etching gas composition includes at least two C3 or C4 organic fluorine compounds and molybdenum fluoride, and the at least two C3 or C4 organic fluorine compounds are isomers.

公开(公告)号：US20230313039A1

公开(公告)日：2023-10-05

申请号：US18189427

申请日：2023-03-24

Applicant: SEMES CO., LTD.

Inventor： Kyungseok MIN ,  Hyunjong SHIM ,  Sangmin MUN ,  Sunjoo PARK ,  Hwan JUNG ,  Nayeon LEE

IPC: C09K13/00 ,  H01L21/311

CPC classification number: C09K13/00 ,  H01L21/31116 ,  H01L21/31144

Abstract: An etching gas composition includes at least two types of organofluorine compounds of carbon number C3 or carbon number C4, wherein the at least two types of organofluorine compounds are isomeric to each other.