APPARATUS FOR TREATING SUBSTRATE AND METHOD FOR TREATING SUBSTRATE

    公开(公告)号:US20220199364A1

    公开(公告)日:2022-06-23

    申请号:US17547303

    申请日:2021-12-10

    Abstract: Disclosed is a microwave application unit for applying a microwave to generate plasma. The microwave application unit includes an antenna plate disposed on the support unit and having a plurality of slots; a power supply configured to apply a microwave to the antenna plate; a dielectric plate disposed above the antenna plate to face the antenna plate; an upper plate disposed above the dielectric plate; and a transmissive plate provided below the antenna plate and configured to transmit the microwave to the processing space, wherein an adjustment groove configured to adjust an electric field is formed on an lower surface of the upper plate.

    APPARATUS FOR PROCESSING SUBSTRATE
    3.
    发明公开

    公开(公告)号:US20230162949A1

    公开(公告)日:2023-05-25

    申请号:US17944190

    申请日:2022-09-14

    CPC classification number: H01J37/3222 H01J2237/327

    Abstract: An apparatus for processing a substrate is provided. The apparatus comprises a process chamber configured to define an interior space for internally processing a substrate, a substrate support unit configured to support the substrate in the interior space, a dielectric plate disposed above the substrate support unit, an antenna unit disposed over or above the dielectric plate, shaped into a frustum, having a truncated cone or prismoidal shape, and including a through-hole, a microwave application unit configured to apply microwaves to the antenna unit, and a slow-wave plate disposed on the antenna unit.

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