-
1.
公开(公告)号:US20210119548A1
公开(公告)日:2021-04-22
申请号:US16948417
申请日:2020-09-17
Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Inventor: Dhruv CHOPRA , Tomas TICHY
IPC: H02M3/335
Abstract: Synchronous rectification in active clamp flyback power converters. At least some example embodiments are methods including: sensing a first slope of voltage on a secondary winding of the transformer, the first slope indicative of the power converter entering a charge mode of the transformer; modifying, responsive the sensing, an operational state of a secondary rectifier (SR), driver coupled to a secondary rectifier; making the secondary rectifier conductive by the SR driver during a discharge mode of the transformer; sensing a second slope of voltage on the secondary of the transformer, the second slope indicative of ending of the discharge mode of the power converter; and then returning, responsive to sensing the second slope, the SR driver to an original operational state.
-
公开(公告)号:US20220109374A1
公开(公告)日:2022-04-07
申请号:US17449680
申请日:2021-10-01
Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Inventor: Ajay Karthik HARI , Dhruv CHOPRA
Abstract: Reduced voltage switching of the primary switch. At least one example is a method comprising: activating, during a first switching period, a primary switch coupled to a primary winding of a transformer of a flyback topology, the activating induces a positive current in the primary winding; deactivating the primary switch and activating a secondary switch coupled to the secondary of the transformer, the activating the secondary switch during the first switching period and for a duration selected based on a signal indicative of negative current from a prior switching period, and the activating the secondary switch results in a positive current through the secondary winding followed by a negative current through the secondary winding; and discharging capacitance of the primary switch by a negative current in the primary winding responsive to the negative current in the secondary winding.
-
公开(公告)号:US20180337608A1
公开(公告)日:2018-11-22
申请号:US16034169
申请日:2018-07-12
Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Inventor: Ajay Karthik HARI , Dhruv CHOPRA
CPC classification number: H02M3/33507 , H02M2001/0022 , H02M2001/0054 , Y02B70/1491
Abstract: A power conversion circuit is provided. An input of the power conversion circuit is coupled to a first voltage potential. A switching frequency of the power conversion circuit is set based on a magnitude of the first voltage potential.
-
4.
公开(公告)号:US20240313640A1
公开(公告)日:2024-09-19
申请号:US18182518
申请日:2023-03-13
Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Inventor: Hyunchul EUM , Minha HWANG , Dhruv CHOPRA
CPC classification number: H02M1/4208 , H02M1/12
Abstract: Reducing total harmonic distortion of power-factor correction switching converters. At least one example is a method of operating a power-factor-correction (PFC) converter, the method comprising: charging an inductance of the PFC converter, thereby creating a charge mode; asserting, during the charge mode, an initial-reset signal by a reset circuit implementing voltage-mode control; ending the charge mode a compensated time after assertion of the initial-reset signal, the compensated time inversely proportional to a magnitude of an input voltage of the PFC converter; and then discharging the inductance of the PFC converter.
-
公开(公告)号:US20240097555A1
公开(公告)日:2024-03-21
申请号:US17933935
申请日:2022-09-21
Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Inventor: Karel PTACEK , Dhruv CHOPRA
CPC classification number: H02M1/088 , H02M1/0006
Abstract: A driver is suitable for use with a gallium nitride (GaN) power stage, and includes a voltage regulator and a high side driver. The voltage regulator provides a boot voltage between first and second terminals thereof that varies within a range between a turn-on voltage of a GaN transistor, and a safe voltage limit between a gate and a source thereof throughout an active time of said GaN transistor. The high side driver has an input for receiving a high side drive signal, an output for coupling to said gate of said GaN transistor, a power supply terminal coupled to said first terminal of said voltage regulator, and a ground terminal for coupled to said second terminal of said voltage regulator.
-
公开(公告)号:US20170207708A1
公开(公告)日:2017-07-20
申请号:US15156033
申请日:2016-05-16
Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Inventor: Ajay Karthik HARI , Dhruv CHOPRA
CPC classification number: H02M3/33507 , H02M2001/0022 , H02M2001/0054 , Y02B70/1491
Abstract: A power conversion circuit is provided. An input of the power conversion circuit is coupled to a first voltage potential. A switching frequency of the power conversion circuit is set based on a magnitude of the first voltage potential.
-
-
-
-
-