Method of analyzing metal contamination of silicon wafer and method of manufacturing silicon wafer

    公开(公告)号:US10727071B2

    公开(公告)日:2020-07-28

    申请号:US16485243

    申请日:2018-02-23

    Inventor: Taisuke Mizuno

    Abstract: Provided is a method of analyzing metal contamination of a silicon wafer, the method including etching a surface layer region of the silicon wafer by bringing a surface of a silicon wafer to be analyzed into contact with etching gas that includes hydrogen fluoride gas and nitric acid gas; bringing an exposed surface of the silicon wafer, exposed by the etching, into contact with gas generated from a mixed acid including hydrochloric acid and nitric acid; heating the silicon wafer that has been brought into contact with the gas generated from the mixed acid; bringing the exposed surface, exposed by the etching, of the silicon wafer after the heating into contact with a recovery solution; and analyzing a metal component in the recovery solution that has been brought into contact with the exposed surface, exposed by the etching, of the silicon wafer.

Patent Agency Ranking