公开(公告)号：US20170236894A1

公开(公告)日：2017-08-17

申请号：US15383159

申请日：2016-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun Kim ,  Ki-hyung NAM ,  Byung Yoon KIM ,  Bong-Soo KIM ,  Eunjung KIM ,  Yoosang HWANG

IPC: H01L49/02

CPC classification number: H01L28/56 ,  H01L27/10808 ,  H01L27/10817 ,  H01L27/10847 ,  H01L27/10852 ,  H01L28/75 ,  H01L28/82 ,  H01L28/88 ,  H01L28/90 ,  H01L28/92

Abstract: Provided is a semiconductor device. The semiconductor device includes a capacitor structure including a plurality of lower electrodes, a dielectric layer that covers surfaces of the plurality of lower electrodes, and an upper electrode on the dielectric layer. The semiconductor device further includes a support structure that supports the plurality of lower electrodes. The support structure includes a first support region that covers sidewalls of one of the plurality of lower electrodes, and an opening that envelops the first support region when the semiconductor device is viewed in plan view.

公开(公告)号：US20200035781A1

公开(公告)日：2020-01-30

申请号：US16593438

申请日：2019-10-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki-hyung NAM ,  Bong-Soo KIM ,  Yoosang HWANG

IPC: H01L49/02 ,  H01L27/108 ,  H01L21/311 ,  H01L21/285 ,  H01L21/02 ,  H01L21/3213 ,  H01L29/41 ,  H01L27/112

Abstract: A semiconductor device including a plurality of pillars on a semiconductor substrate; and a support pattern in contact with some lateral surfaces of the pillars and connecting the pillars with one another, wherein the support pattern includes openings that expose other lateral surfaces of the pillars, each of the pillars includes a first pillar upper portion in contact with the support pattern and a second pillar upper portion spaced apart from the support pattern, and the second pillar upper portion has a concave slope.

公开(公告)号：US20170194328A1

公开(公告)日：2017-07-06

申请号：US15397842

申请日：2017-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： TAEJIN PARK ,  Kyung-Eun KIM ,  Bong-Soo KIM ,  Ki-hyung NAM ,  Yoosang HWANG

IPC: H01L27/108 ,  H01L29/423

CPC classification number: H01L27/10811 ,  H01L27/10814 ,  H01L27/10847 ,  H01L29/4238

Abstract: A semiconductor device including a capacitor is provided. The semiconductor device includes lower electrodes, each of which includes a first electrode and a second electrode stacked in a first direction. The second electrode has a pillar shape that has a bar-type cross section having a longitudinal axis when viewed from a cross-sectional view taken along a plane defined by second and third directions perpendicular to the first direction.

公开(公告)号：US20190206983A1

公开(公告)日：2019-07-04

申请号：US16115690

申请日：2018-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-hyung NAM ,  Bong-Soo KIM ,  Yoosang HWANG

IPC: H01L49/02 ,  H01L27/108 ,  H01L21/311 ,  H01L21/285 ,  H01L21/02 ,  H01L21/3213

Abstract: A semiconductor device including a plurality of pillars on a semiconductor substrate; and a support pattern in contact with some lateral surfaces of the pillars and connecting the pillars with one another, wherein the support pattern includes openings that expose other lateral surfaces of the pillars, each of the pillars includes a first pillar upper portion in contact with the support pattern and a second pillar upper portion spaced apart from the support pattern, and the second pillar upper portion has a concave slope.