公开(公告)号：US20240331653A1

公开(公告)日：2024-10-03

申请号：US18585148

申请日：2024-02-23

Applicant: Sharp Display Technology Corporation

Inventor： Yohei TAKEUCHI ,  Tatsuya KAWASAKI ,  Kengo HARA ,  Masafumi SUGINO ,  Hajime IMAI ,  Tohru DAITOH

IPC: G09G3/36 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: G09G3/3677 ,  G02F1/136286 ,  G02F1/1368 ,  G09G2310/0286 ,  G09G2310/08

Abstract: A transistor includes a first electrode, a first semiconductor portion that is at least partly superimposed on the first electrode and that is composed of a semiconductor material, a first insulating film that is interposed between the first electrode and the first semiconductor portion, a second electrode that is superimposed on a part of the first semiconductor portion and that is connected to the first semiconductor portion, and a third electrode that is located in a layer in which the second electrode is located, that is superimposed on a part of the first semiconductor portion, and that is connected to the first semiconductor portion. An electric potential of the second electrode is lower than that of the third electrode. The third electrode includes a first portion that is spaced from the second electrode and a second portion that is spaced from the second electrode opposite the first portion.