公开(公告)号：US20220281743A1

公开(公告)日：2022-09-08

申请号：US17661805

申请日：2022-05-03

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Aidin Fathalizadeh ,  Thang Pham ,  William Mickelson ,  Alexander Zettl

IPC: C01B21/064 ,  B82Y40/00 ,  C04B35/622 ,  C04B35/583 ,  B01J19/08

Abstract: This disclosure provides systems, methods, and apparatus related to boron nitride nanomaterials. In one aspect, a method includes generating a directed flow of plasma. A boron-containing species is introduced to the directed flow of the plasma. Boron nitride nanostructures are formed in a chamber. In another aspect, a method includes generating a directed flow of plasma using nitrogen gas. A boron-containing species is introduced to the directed flow of the plasma. The boron-containing species can consist of boron powder, boron nitride powder, and/or boron oxide powder. Boron nitride nanostructures are formed in a chamber, with a pressure in the chamber being about 3 atmospheres or greater.

公开(公告)号：US20170197832A1

公开(公告)日：2017-07-13

申请号：US15321177

申请日：2015-06-24

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Aidin Fathalizadeh ,  Thang Pham ,  William Mickelson ,  Alexander Zettl

IPC: C01B21/064 ,  B01J19/08

CPC classification number: C01B21/0641 ,  B01J19/08 ,  B01J2219/0879 ,  B01J2219/0894 ,  B82Y30/00 ,  B82Y40/00 ,  C01B21/064 ,  C01P2002/82 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/13 ,  C01P2004/24 ,  C04B35/583 ,  C04B35/622 ,  C04B2235/5276 ,  C04B2235/5284 ,  C04B2235/5454 ,  C04B2235/767 ,  C04B2235/95 ,  Y10S977/762 ,  Y10S977/896

Abstract: This disclosure provides systems, methods, and apparatus related to boron nitride nanomaterials. In one aspect, a method includes generating a directed flow of plasma. A boron-containing species is introduced to the directed flow of the plasma. Boron nitride nanostructures are formed in a chamber. In another aspect, a method includes generating a directed flow of plasma using nitrogen gas. A boron-containing species is introduced to the directed flow of the plasma. The boron-containing species can consist of boron powder, boron nitride powder, and/or boron oxide powder. Boron nitride nanostructures are formed in a chamber, with a pressure in the chamber being about 3 atmospheres or greater.

公开(公告)号：US12006210B2

公开(公告)日：2024-06-11

申请号：US17661805

申请日：2022-05-03

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Aidin Fathalizadeh ,  Thang Pham ,  William Mickelson ,  Alexander Zettl

IPC: C01B21/064 ,  B01J19/08 ,  B82Y40/00 ,  C04B35/583 ,  C04B35/622 ,  B82Y30/00

CPC classification number: C01B21/0641 ,  B01J19/08 ,  B82Y40/00 ,  C01B21/064 ,  C04B35/583 ,  C04B35/622 ,  B01J2219/0879 ,  B01J2219/0894 ,  B82Y30/00 ,  C01P2002/82 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/13 ,  C01P2004/24 ,  C04B2235/5276 ,  C04B2235/5284 ,  C04B2235/5454 ,  C04B2235/767 ,  C04B2235/95 ,  Y10S977/762 ,  Y10S977/896

Abstract: This disclosure provides systems, methods, and apparatus related to boron nitride nanomaterials. In one aspect, a method includes generating a directed flow of plasma. A boron-containing species is introduced to the directed flow of the plasma. Boron nitride nanostructures are formed in a chamber. In another aspect, a method includes generating a directed flow of plasma using nitrogen gas. A boron-containing species is introduced to the directed flow of the plasma. The boron-containing species can consist of boron powder, boron nitride powder, and/or boron oxide powder. Boron nitride nanostructures are formed in a chamber, with a pressure in the chamber being about 3 atmospheres or greater.

公开(公告)号：US11345595B2

公开(公告)日：2022-05-31

申请号：US15321177

申请日：2015-06-24

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Aidin Fathalizadeh ,  Thang Pham ,  William Mickelson ,  Alexander Zettl

IPC: C01B21/064 ,  B82Y40/00 ,  C04B35/622 ,  C04B35/583 ,  B01J19/08 ,  B82Y30/00

Abstract: This disclosure provides systems, methods, and apparatus related to boron nitride nanomaterials. In one aspect, a method includes generating a directed flow of plasma. A boron-containing species is introduced to the directed flow of the plasma. Boron nitride nanostructures are formed in a chamber. In another aspect, a method includes generating a directed flow of plasma using nitrogen gas. A boron-containing species is introduced to the directed flow of the plasma. The boron-containing species can consist of boron powder, boron nitride powder, and/or boron oxide powder. Boron nitride nanostructures are formed in a chamber, with a pressure in the chamber being about 3 atmospheres or greater.