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公开(公告)号：US11345595B2
公开(公告)日：2022-05-31
申请号：US15321177
申请日：2015-06-24
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Aidin Fathalizadeh , Thang Pham , William Mickelson , Alexander Zettl
IPC: C01B21/064 , B82Y40/00 , C04B35/622 , C04B35/583 , B01J19/08 , B82Y30/00
Abstract: This disclosure provides systems, methods, and apparatus related to boron nitride nanomaterials. In one aspect, a method includes generating a directed flow of plasma. A boron-containing species is introduced to the directed flow of the plasma. Boron nitride nanostructures are formed in a chamber. In another aspect, a method includes generating a directed flow of plasma using nitrogen gas. A boron-containing species is introduced to the directed flow of the plasma. The boron-containing species can consist of boron powder, boron nitride powder, and/or boron oxide powder. Boron nitride nanostructures are formed in a chamber, with a pressure in the chamber being about 3 atmospheres or greater.
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公开(公告)号：US20130221415A1
公开(公告)日：2013-08-29
申请号：US13773985
申请日：2013-02-22
Applicant: The Regents of the University of California
Inventor： William Regan , Alexander Zettl
IPC: H01L29/68
CPC classification number: H01L29/68 , H01L29/66356 , H01L31/06 , H01L31/062 , H01L31/07 , Y02E10/50
Abstract: This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.
Abstract translation: 本公开提供了与场效应p-n结相关的系统，方法和装置。 在一个方面，一种器件包括欧姆接触，设置在欧姆接触上的半导体层，设置在半导体层上的至少一个整流触点，包括设置在至少一个整流触点和半导体层上的层的栅极和 栅极触点设置在层上。 整流触点的横向宽度小于半导体层的半导体耗尽宽度。 栅极触点电连接到欧姆接触，以产生自门控反馈回路，其被配置为保持栅极的栅极电场。
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公开(公告)号：US20170197832A1
公开(公告)日：2017-07-13
申请号：US15321177
申请日：2015-06-24
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Aidin Fathalizadeh , Thang Pham , William Mickelson , Alexander Zettl
IPC: C01B21/064 , B01J19/08
CPC classification number: C01B21/0641 , B01J19/08 , B01J2219/0879 , B01J2219/0894 , B82Y30/00 , B82Y40/00 , C01B21/064 , C01P2002/82 , C01P2004/03 , C01P2004/04 , C01P2004/13 , C01P2004/24 , C04B35/583 , C04B35/622 , C04B2235/5276 , C04B2235/5284 , C04B2235/5454 , C04B2235/767 , C04B2235/95 , Y10S977/762 , Y10S977/896
Abstract: This disclosure provides systems, methods, and apparatus related to boron nitride nanomaterials. In one aspect, a method includes generating a directed flow of plasma. A boron-containing species is introduced to the directed flow of the plasma. Boron nitride nanostructures are formed in a chamber. In another aspect, a method includes generating a directed flow of plasma using nitrogen gas. A boron-containing species is introduced to the directed flow of the plasma. The boron-containing species can consist of boron powder, boron nitride powder, and/or boron oxide powder. Boron nitride nanostructures are formed in a chamber, with a pressure in the chamber being about 3 atmospheres or greater.
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Patent Agency Ranking
公开(公告)号：US20160157022A1
公开(公告)日：2016-06-02
申请号：US14737903
申请日：2015-06-12
Applicant: The Regents of the University of California
Inventor： Qin Zhou , Alexander Zettl
Abstract: This disclosure provides systems, methods, and apparatus associated with an electrostatically driven graphene speaker. In one aspect, a device includes a graphene membrane, a first frame on a first side of the graphene membrane, and a second frame on a second side of the graphene membrane. The first frame and the second frame both include substantially circular open regions that define a substantially circular portion of the graphene membrane. A first electrode is proximate the first side of the circular portion of the graphene membrane. A second electrode proximate the second side of the circular portion of the graphene membrane.
Abstract translation: 本公开提供了与静电驱动的石墨烯扬声器相关联的系统，方法和装置。 一方面，一种装置包括石墨烯膜，在石墨烯膜的第一侧上的第一框架和在石墨烯膜的第二侧上的第二框架。 第一框架和第二框架都包括限定石墨烯膜的基本圆形部分的基本上圆形的开放区域。 第一电极靠近石墨烯膜的圆形部分的第一侧。 靠近石墨烯膜的圆形部分的第二侧的第二电极。
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公开(公告)号：US12006210B2
公开(公告)日：2024-06-11
申请号：US17661805
申请日：2022-05-03
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Aidin Fathalizadeh , Thang Pham , William Mickelson , Alexander Zettl
IPC: C01B21/064 , B01J19/08 , B82Y40/00 , C04B35/583 , C04B35/622 , B82Y30/00
CPC classification number: C01B21/0641 , B01J19/08 , B82Y40/00 , C01B21/064 , C04B35/583 , C04B35/622 , B01J2219/0879 , B01J2219/0894 , B82Y30/00 , C01P2002/82 , C01P2004/03 , C01P2004/04 , C01P2004/13 , C01P2004/24 , C04B2235/5276 , C04B2235/5284 , C04B2235/5454 , C04B2235/767 , C04B2235/95 , Y10S977/762 , Y10S977/896
Abstract: This disclosure provides systems, methods, and apparatus related to boron nitride nanomaterials. In one aspect, a method includes generating a directed flow of plasma. A boron-containing species is introduced to the directed flow of the plasma. Boron nitride nanostructures are formed in a chamber. In another aspect, a method includes generating a directed flow of plasma using nitrogen gas. A boron-containing species is introduced to the directed flow of the plasma. The boron-containing species can consist of boron powder, boron nitride powder, and/or boron oxide powder. Boron nitride nanostructures are formed in a chamber, with a pressure in the chamber being about 3 atmospheres or greater.
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公开(公告)号：US20220281743A1
公开(公告)日：2022-09-08
申请号：US17661805
申请日：2022-05-03
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Aidin Fathalizadeh , Thang Pham , William Mickelson , Alexander Zettl
IPC: C01B21/064 , B82Y40/00 , C04B35/622 , C04B35/583 , B01J19/08
Abstract: This disclosure provides systems, methods, and apparatus related to boron nitride nanomaterials. In one aspect, a method includes generating a directed flow of plasma. A boron-containing species is introduced to the directed flow of the plasma. Boron nitride nanostructures are formed in a chamber. In another aspect, a method includes generating a directed flow of plasma using nitrogen gas. A boron-containing species is introduced to the directed flow of the plasma. The boron-containing species can consist of boron powder, boron nitride powder, and/or boron oxide powder. Boron nitride nanostructures are formed in a chamber, with a pressure in the chamber being about 3 atmospheres or greater.
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公开(公告)号：US10425742B2
公开(公告)日：2019-09-24
申请号：US14737903
申请日：2015-06-12
Applicant: The Regents of the University of California
Inventor： Qin Zhou , Alexander Zettl
Abstract: This disclosure provides systems, methods, and apparatus associated with an electrostatically driven graphene speaker. In one aspect, a device includes a graphene membrane, a first frame on a first side of the graphene membrane, and a second frame on a second side of the graphene membrane. The first frame and the second frame both include substantially circular open regions that define a substantially circular portion of the graphene membrane. A first electrode is proximate the first side of the circular portion of the graphene membrane. A second electrode proximate the second side of the circular portion of the graphene membrane.
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公开(公告)号：US09024367B2
公开(公告)日：2015-05-05
申请号：US13773985
申请日：2013-02-22
Applicant: The Regents of the University of California
Inventor： William Regan , Alexander Zettl
CPC classification number: H01L29/68 , H01L29/66356 , H01L31/06 , H01L31/062 , H01L31/07 , Y02E10/50
Abstract: This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.
Abstract translation: 本公开提供了与场效应p-n结相关的系统，方法和装置。 在一个方面，一种器件包括欧姆接触，设置在欧姆接触上的半导体层，设置在半导体层上的至少一个整流触点，包括设置在至少一个整流触点和半导体层上的层的栅极和 栅极触点设置在层上。 整流触点的横向宽度小于半导体层的半导体耗尽宽度。 栅极触点电连接到欧姆接触，以产生自门控反馈回路，其被配置为保持栅极的栅极电场。
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