公开(公告)号：US20240349427A1

公开(公告)日：2024-10-17

申请号：US18755615

申请日：2024-06-26

Applicant: TOPPAN HOLDINGS INC.

Inventor： Takehisa TAKADA

IPC: H05K1/11 ,  H05K1/03 ,  H05K3/40

CPC classification number: H05K1/115 ,  H05K1/0306 ,  H05K3/4038 ,  H05K2203/0307 ,  H05K2203/0723 ,  H05K2203/107

Abstract: A multilayer wiring substrate including a glass substrate provided with a through electrode, in which a bottom surface part of the through electrode provided to the glass substrate contains an unevenness in which an absolute value of a height difference from a first surface of the glass substrate is ±0.5 μm or more and 5 μm or less. For manufacturing this, a glass substrate is irradiated with a laser, a modified part reaching a first surface is formed in the glass substrate, and an unevenness is formed on the first surface of the glass substrate. Then, a hydrofluoric acid resistant metal layer and/or a first seed layer on each of which a shape of the unevenness is transferred is formed. Thereafter, a through glass via is formed by hydrofluoric acid, and then a second seed layer on which the uneven shape is transferred is formed in the through glass via.

公开(公告)号：US20240224426A1

公开(公告)日：2024-07-04

申请号：US18604992

申请日：2024-03-14

Applicant: TOPPAN HOLDINGS INC.

Inventor： Yuki UMEMURA ,  Takehisa TAKADA ,  Tomoyuki ISHII

IPC: H05K1/16 ,  H05K1/03 ,  H05K1/11

CPC classification number: H05K1/162 ,  H05K1/0306 ,  H05K1/115 ,  H05K2201/068 ,  H05K2201/09536 ,  H05K2201/0959 ,  H05K2201/09827

Abstract: A component (capacitor) of the high-frequency circuit provided on a first surface of the glass substrate, and the bottom of the through hole in the glass substrate on the first surface have an overlapping part on the first surface. As a result, the capacitor is formed directly above the via, that is, the through hole, thereby eliminating the need for conductive wiring from the via to the capacitor. In addition, by forming a capacitor on a very flat glass substrate before forming the through hole, and forming the through hole after that, it is possible to stably form the capacitor.