公开(公告)号：US20240410992A1

公开(公告)日：2024-12-12

申请号：US18810893

申请日：2024-08-21

Applicant: TRUPIXEL INC.

Inventor： Myung-Jae LEE ,  Do Kyung HWANG

IPC: G01S7/4863 ,  G01J1/44 ,  G01S17/931

Abstract: Disclosed is a single photon detector comprising a semiconductor substrate and a 2D material layer provided adjacent to the semiconductor substrate, the semiconductor substrate includes a first well having a first conductivity type, a heavily doped region having a second conductivity type different from the first conductivity type, and a depletion region provided between the first well and the heavily doped region.

公开(公告)号：US20240241229A1

公开(公告)日：2024-07-18

申请号：US18308259

申请日：2023-04-27

Applicant: TRUPIXEL INC.

Inventor： Myung-Jae LEE ,  Do Kyung HWANG

IPC: G01S7/4863 ,  G01J1/44 ,  G01S17/931

CPC classification number: G01S7/4863 ,  G01J1/44 ,  G01S17/931 ,  G01J2001/442 ,  G01J2001/4446

Abstract: Disclosed is a single photon detector comprising a semiconductor substrate and a 2D material layer provided adjacent to the semiconductor substrate, the semiconductor substrate includes a first well having a first conductivity type, a heavily doped region having a second conductivity type different from the first conductivity type, and a depletion region provided between the first well and the heavily doped region.