公开(公告)号：US20240410992A1

公开(公告)日：2024-12-12

申请号：US18810893

申请日：2024-08-21

Applicant: TRUPIXEL INC.

Inventor： Myung-Jae LEE ,  Do Kyung HWANG

IPC: G01S7/4863 ,  G01J1/44 ,  G01S17/931

Abstract: Disclosed is a single photon detector comprising a semiconductor substrate and a 2D material layer provided adjacent to the semiconductor substrate, the semiconductor substrate includes a first well having a first conductivity type, a heavily doped region having a second conductivity type different from the first conductivity type, and a depletion region provided between the first well and the heavily doped region.

公开(公告)号：US20250040264A1

公开(公告)日：2025-01-30

申请号：US18784650

申请日：2024-07-25

Applicant: TRUPIXEL INC.

Inventor： Myung-Jae LEE

IPC: H01L31/107 ,  H01L31/0232

Abstract: A photodetection element comprises a substrate having a first surface and a second surface opposite to each other, a first node region within the substrate and having a first conductivity type, a second node region within the substrate spaced apart from the first node region and having a second conductivity type different from the first conductivity type, and an avalanche multiplication region formed between the first node region and the second node region. The first node region, the avalanche multiplication region, and the second node region are arranged along a first direction parallel to the first surface.

公开(公告)号：US20240319340A1

公开(公告)日：2024-09-26

申请号：US18731151

申请日：2024-05-31

Applicant: TRUPIXEL INC.

Inventor： Myung-Jae LEE

IPC: G01S7/481 ,  G01S17/08

CPC classification number: G01S7/4816 ,  G01S17/08

Abstract: Disclosed is a single photon detection device comprises a guard ring having a first conductivity type, a heavily doped region provided in an inner region surrounded by the guard ring and having a second conductivity type different from the first conductivity type, a contact provided on an opposite side of the heavily doped region with respect to the guard ring and spaced apart from the guard ring, and a depletion region formed on a side surface and a bottom surface of the heavily doped region.

公开(公告)号：US20250035753A1

公开(公告)日：2025-01-30

申请号：US18784684

申请日：2024-07-25

Applicant: Trupixel Inc.

Inventor： Myung-Jae LEE

IPC: G01S7/481 ,  G01S17/10

Abstract: A single photon detection device comprises a first silicide layer, a first well provided on the first silicide layer and having a first conductivity type, a high-concentration doping region provided between the first silicide layer and the first well, having a second conductivity type different from the first conductivity type, and contacting the first silicide layer, a contact region spaced apart from the high-concentration doping region along a direction parallel to a bottom surface of the high-concentration doping region and having the first conductivity type, and a depletion region formed in a region adjacent to a top surface of the high-concentration doping region.

公开(公告)号：US12099146B2

公开(公告)日：2024-09-24

申请号：US18308259

申请日：2023-04-27

Applicant: TRUPIXEL INC.

Inventor： Myung-Jae Lee ,  Do Kyung Hwang

IPC: G01S7/4863 ,  G01J1/44 ,  G01S17/931

CPC classification number: G01S7/4863 ,  G01J1/44 ,  G01S17/931 ,  G01J2001/442 ,  G01J2001/4446

Abstract: Disclosed is a single photon detector comprising a semiconductor substrate and a 2D material layer provided adjacent to the semiconductor substrate, the semiconductor substrate includes a first well having a first conductivity type, a heavily doped region having a second conductivity type different from the first conductivity type, and a depletion region provided between the first well and the heavily doped region.

公开(公告)号：US12283639B2

公开(公告)日：2025-04-22

申请号：US17878405

申请日：2022-08-01

Applicant: TRUPIXEL INC.

Inventor： Myung-Jae Lee

IPC: H01L31/0352 ,  H01L27/144 ,  H01L31/107

Abstract: A single-photon detection pixel includes a substrate, a first well provided in the substrate, a pair of heavily doped regions provided on the first well, and a contact provided between the pair of heavily doped regions, wherein the substrate and the pair of heavily doped regions have a first conductivity type, and the first well and the contact have a second conductivity type that is different from the first conductivity type.

公开(公告)号：US20250040263A1

公开(公告)日：2025-01-30

申请号：US18784621

申请日：2024-07-25

Applicant: TRUPIXEL INC.

Inventor： Myung-Jae LEE

IPC: H01L31/107 ,  G01S7/481 ,  H01L31/0352

Abstract: Disclosed is a single photon avalanche diode comprises a first well having a first conductivity type, a heavily doped region provided on the first well, a guard ring surrounding the heavily doped region, and a second region formed between the first well and the heavily doped region and configured to multiply charge carriers. The heavily doped region and the guard ring have a second conductivity type different from the first conductivity type. The second region extends onto a boundary between a lower portion of the guard ring and the first well.

公开(公告)号：US20240241229A1

公开(公告)日：2024-07-18

申请号：US18308259

申请日：2023-04-27

Applicant: TRUPIXEL INC.

Inventor： Myung-Jae LEE ,  Do Kyung HWANG

IPC: G01S7/4863 ,  G01J1/44 ,  G01S17/931

CPC classification number: G01S7/4863 ,  G01J1/44 ,  G01S17/931 ,  G01J2001/442 ,  G01J2001/4446

Abstract: Disclosed is a single photon detector comprising a semiconductor substrate and a 2D material layer provided adjacent to the semiconductor substrate, the semiconductor substrate includes a first well having a first conductivity type, a heavily doped region having a second conductivity type different from the first conductivity type, and a depletion region provided between the first well and the heavily doped region.