公开(公告)号：US12099146B2

公开(公告)日：2024-09-24

申请号：US18308259

申请日：2023-04-27

Applicant: TRUPIXEL INC.

Inventor： Myung-Jae Lee ,  Do Kyung Hwang

IPC: G01S7/4863 ,  G01J1/44 ,  G01S17/931

CPC classification number: G01S7/4863 ,  G01J1/44 ,  G01S17/931 ,  G01J2001/442 ,  G01J2001/4446

Abstract: Disclosed is a single photon detector comprising a semiconductor substrate and a 2D material layer provided adjacent to the semiconductor substrate, the semiconductor substrate includes a first well having a first conductivity type, a heavily doped region having a second conductivity type different from the first conductivity type, and a depletion region provided between the first well and the heavily doped region.

公开(公告)号：US12283639B2

公开(公告)日：2025-04-22

申请号：US17878405

申请日：2022-08-01

Applicant: TRUPIXEL INC.

Inventor： Myung-Jae Lee

IPC: H01L31/0352 ,  H01L27/144 ,  H01L31/107

Abstract: A single-photon detection pixel includes a substrate, a first well provided in the substrate, a pair of heavily doped regions provided on the first well, and a contact provided between the pair of heavily doped regions, wherein the substrate and the pair of heavily doped regions have a first conductivity type, and the first well and the contact have a second conductivity type that is different from the first conductivity type.