公开(公告)号：US09324559B2

公开(公告)日：2016-04-26

申请号：US13923390

申请日：2013-06-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Lan Hai Wang ,  Ding-I Liu ,  Si-Wen Liao ,  Po-Hsiung Leu ,  Yong-Hung Yang ,  Chia-Ming Tai

IPC: H01L21/02 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01L21/02271 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45508 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/02181

Abstract: A multi chamber thin film deposition apparatus and a method for depositing films, is provided. Each chamber includes a three dimensional gas delivery system including process gases being delivered downwardly toward the substrate and laterally toward the substrate. A pumping system includes an exhaust port in each chamber that is centrally positioned underneath the substrate being processed and therefore the gas flow around all portions of the edge of the substrate are equally spaced from the exhaust port thereby creating a uniform gas flow profile which results in film thickness uniformity of films deposited on both the front and back surfaces of the substrate. The deposited films demonstrate uniform thickness on the front and back of the substrate and extend inwardly to a uniform distance on the periphery of the backside of the substrate.

Abstract translation: 提供一种多室薄膜沉积设备和一种用于沉积薄膜的方法。 每个室包括三维气体输送系统，其包括朝向衬底向下输送的工艺气体，并横向朝向衬底。 泵送系统包括在每个室中的排气口，其位于正在处理的衬底下的中心位置，因此围绕衬底边缘的所有部分的气流与排气口等间隔开，从而产生均匀的气流分布，其导致 沉积在基板的前表面和后表面上的膜的膜厚度均匀性。 沉积的膜在基板的前后表现出均匀的厚度，并且在基板的背面的周边上向内延伸到均匀的距离。

公开(公告)号：US09573144B2

公开(公告)日：2017-02-21

申请号：US14291575

申请日：2014-05-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Lan-Hai Wang ,  Yong-Hung Yang ,  Ding-I Liu ,  Si-Wen Liao ,  Po-Hsiung Leu ,  Mao-Cheng Lin

IPC: H01L21/31 ,  H01L21/469 ,  B05B1/30 ,  B05B1/18 ,  B05C11/08 ,  C23C18/00 ,  H01L21/67 ,  H01L31/18

CPC classification number: B05B1/14 ,  B05B1/185 ,  B05B1/30 ,  B05B15/60 ,  B05C11/08 ,  C23C18/00 ,  H01L21/67051 ,  H01L21/6715 ,  H01L31/18

Abstract: A method of forming a coating film over a substrate is provided. The method includes spinning the substrate. The method further includes providing a central coating liquid spray over a central portion of the substrate. The method also includes providing first coating liquid sprays over the substrate. The first coating liquid sprays surround the central coating liquid spray and are spaced apart from the central coating liquid spray by a same first distance.

Abstract translation: 提供了在基板上形成涂膜的方法。 该方法包括旋转衬底。 该方法还包括在基底的中心部分上提供中心涂覆液体喷雾。 该方法还包括在衬底上提供第一涂覆液体喷雾。 第一次涂布液体喷雾包围中央喷涂液体喷雾，并与中心喷涂液体喷雾间隔相同的第一距离。

公开(公告)号：US20140377961A1

公开(公告)日：2014-12-25

申请号：US13923390

申请日：2013-06-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Lan Hai Wang ,  Ding-I Liu ,  Si-Wen Liao ,  Po-Hsiung Leu ,  Yong-Hung Yang ,  Chia-Ming Tai

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02271 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45508 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/02181

Abstract: A multi chamber thin film deposition apparatus and a method for depositing films, is provided. Each chamber includes a three dimensional gas delivery system including process gases being delivered downwardly toward the substrate and laterally toward the substrate. A pumping system includes an exhaust port in each chamber that is centrally positioned underneath the substrate being processed and therefore the gas flow around all portions of the edge of the substrate are equally spaced from the exhaust port thereby creating a uniform gas flow profile which results in film thickness uniformity of films deposited on both the front and back surfaces of the substrate. The deposited films demonstrate uniform thickness on the front and back of the substrate and extend inwardly to a uniform distance on the periphery of the backside of the substrate.

Abstract translation: 提供一种多室薄膜沉积设备和一种用于沉积薄膜的方法。 每个室包括三维气体输送系统，其包括朝向衬底向下输送的工艺气体，并横向朝向衬底。 泵送系统包括在每个室中的排气口，其位于正在处理的衬底下的中心位置，因此围绕衬底边缘的所有部分的气流与排气口等间隔开，从而产生均匀的气流分布，其导致 沉积在基板的前表面和后表面上的膜的膜厚度均匀性。 沉积的膜在基板的前后表现出均匀的厚度，并且在基板的背面的周边上向内延伸到均匀的距离。