公开(公告)号：US20240079214A1

公开(公告)日：2024-03-07

申请号：US18262422

申请日：2022-01-13

Applicant: Tokyo Electron Limited

Inventor： Yuji Mimura ,  Hiroshi Maeda ,  Takuro Masuzumi ,  Takashi Terada ,  Masaru Honda ,  Ryoichi Sakamoto ,  Takashi Fuse ,  Yusuke Kubota

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32743 ,  H01J37/32981 ,  H01J2237/336

Abstract: A surface modifying method of modifying a bonding surface of a substrate to be bonded to another substrate by plasma of a processing gas includes an adjusting process and a modifying process. In the adjusting process, an amount of moisture in a processing vessel is adjusted by supplying a humidified gas into the processing vessel allowed to accommodate the substrate therein. In the modifying process, the bonding surface of the substrate is modified by forming the plasma of the processing gas in the processing vessel in a state that the amount of moisture in the processing vessel is adjusted.

公开(公告)号：US20140357016A1

公开(公告)日：2014-12-04

申请号：US14291164

申请日：2014-05-30

Applicant: Tokyo Electron Limited

Inventor： Takashi Fuse ,  Setsuko Shibuya

IPC: H01L51/00 ,  B05C9/12

CPC classification number: B05C9/12 ,  B05D1/60 ,  B05D3/063 ,  B05D3/064 ,  B05D3/067 ,  B05D7/02 ,  C23C16/45536

Abstract: An organic molecular film forming apparatus 100 of forming an organic molecular film on a processing target object includes a processing chamber 11 that accommodates therein the processing target object; an organic material gas supplying unit 2 that supplies an organic material gas into the processing chamber 11; and an ultraviolet ray irradiating unit 13 that irradiates ultraviolet ray to at least one of the processing target object, the organic material gas supplied to the processing target object, and a film formed on a surface of the processing target object. At least one of the surface of the processing target object and the organic molecular film formed thereon is activated by irradiating the ultraviolet ray from the ultraviolet ray irradiating unit 13 to at least one of the processing target object, the organic material gas supplied to the processing target object, and the film formed on the processing target object.

Abstract translation: 在加工对象物上形成有机分子膜的有机分子膜形成装置100包括容纳处理对象物的处理室11， 有机材料气体供给单元2，其将有机材料气体供给到处理室11中; 以及紫外线照射单元13，其将紫外线照射到处理对象物体中的至少一个，供给到处理对象物体的有机材料气体和形成在处理对象物体的表面上的膜。 通过将紫外线照射单元13的紫外线照射到加工对象物中的至少一个，供给到处理对象物中的有机材料气体中的至少一个来激活加工对象物的表面和形成于其上的有机分子膜中的至少一个 目标对象和形成在处理目标对象上的胶片。

公开(公告)号：US11879067B2

公开(公告)日：2024-01-23

申请号：US17288130

申请日：2019-10-31

Applicant: Tokyo Electron Limited ,  Daikin Industries, Ltd.

Inventor： Takashi Fuse ,  Takashi Namikawa

IPC: B05D1/00 ,  C09D171/00 ,  H01L21/027

CPC classification number: C09D171/00 ,  B05D1/60 ,  H01L21/0271

Abstract: A film forming method is a method of forming a film on a substrate top face including a first region in which a metal or a semiconductor is exposed and a second region in which an insulator is exposed. The method includes a SAM forming process of forming a self-assembled monolayer film of a perfluoropolyether group-containing compound on the first region and a film growth process of forming a predetermined film on the second region after execution of SAM forming process.

公开(公告)号：US20140299870A1

公开(公告)日：2014-10-09

申请号：US14358694

申请日：2012-11-14

Applicant: Tokyo Electron Limited

Inventor： Takashi Fuse ,  Misako Saito ,  Hiroshi Sato

IPC: H01L51/05 ,  H01L51/00

CPC classification number: H01L51/0558 ,  H01L51/0002 ,  H01L51/0541

Abstract: A method for manufacturing an organic transistor includes laminating a base insulating layer on a substrate; forming source/drain electrodes on the base insulating layer; laminating an organic semiconductor layer to cover the electrodes and be in contact with the base insulating layer; laminating a gate insulating layer on the organic semiconductor layer; forming a gate electrode on the gate insulating layer; and performing, before the organic semiconductor layer is formed, surface treatment on the surface of the base insulating layer which is in contact with the organic semiconductor layer. The surface treatment is performed such that, when W1 represents the work of adhesion between two laminated layers using the same material of the organic semiconductor layer, the work of adhesion W2 between the base insulating layer and the organic semiconductor layer when the organic semiconductor layer is formed on the surface-treated base insulating layer satisfies the relationship W1≧W2.

Abstract translation: 一种制造有机晶体管的方法，包括在基板上层叠基底绝缘层; 在所述基底绝缘层上形成源极/漏极; 层叠有机半导体层以覆盖电极并与基底绝缘层接触; 在所述有机半导体层上层叠栅极绝缘层; 在栅极绝缘层上形成栅电极; 在形成有机半导体层之前，在与有机半导体层接触的基极绝缘层的表面进行表面处理。 进行表面处理，使得当W1表示使用与有机半导体层相同的材料的两个层叠层之间的粘合作用时，当有机半导体层为有机半导体层时，基底绝缘层和有机半导体层之间的粘附力W2 形成在表面处理基底绝缘层上的关系W1≥2W。

公开(公告)号：US10600621B2

公开(公告)日：2020-03-24

申请号：US16087249

申请日：2017-03-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masato Morishima ,  Katsuhiko Iwabuchi ,  Takashi Fuse ,  Madoka Fujimoto ,  Daisuke Nishide

IPC: H01J37/32 ,  C03C17/42 ,  C23C16/509 ,  H05H1/46

Abstract: A plasma electrode is provided with an electrode plate, a ground plate, and an insulating plate arranged between the electrode plate and the ground plate. Protrusions of the electrode plate are arranged inside through holes of the ground plate and inside through holes of the insulating plate. One of the through hole provided on the center axes of the protrusions and the through hole provided around the through hole discharges a first processing gas to below the ground plate. The other of the through holes exhausts a gas existing below the ground plate. A second flow path around the protrusions supplies a second processing gas supplied via a first flow path to a gap between outer walls of the protrusions and inner walls of the through holes. The second processing gas supplied to the gap is converted into plasma by high frequency power applied to the electrode plate.