公开(公告)号：US20230168124A1

公开(公告)日：2023-06-01

申请号：US17906891

申请日：2021-03-17

Applicant: Tokyo Electron Limited

Inventor： Yasutoshi UMEHARA

IPC: G01J3/10 ,  G01J3/02

CPC classification number: G01J3/10 ,  G01J3/0216 ,  G01J2003/102

Abstract: A spectroscopic analysis system includes a light source including a light emitting diode (51X), a wavelength converter (52X) configured to convert a wavelength of light output from the light emitting diode (51X), and a condenser (54X) configured to condense light output from the wavelength converter (52X), the light source including a mixing section configured to mix light output from the plurality of light emitting elements, and the wavelength of the light output from the plurality of light emitting elements being different, and a spectroscopic measurement section configured to acquire spectroscopic data by dispersing light reflected from an object on which the light source emits the light.

公开(公告)号：US20210293531A1

公开(公告)日：2021-09-23

申请号：US17196033

申请日：2021-03-09

Applicant: Tokyo Electron Limited

Inventor： Yasutoshi UMEHARA

IPC: G01B11/06

Abstract: A film thickness measuring system measures thicknesses of first films of respective first substrates by spectroscopy, captures first image data of surfaces of second substrates each having a second film to acquire first color information of the surfaces of the second substrates, and calculates a correlation between a thickness of the second film and color information of the surface of the second substrate by using the measured thickness of the first films and the first color information. When estimating a thickness of a third film of a third substrate, the film thickness measuring system acquire second color information of the surface of the third substrate by using captured image data of the third substrate, and estimates a thickness of the third film in the second region, by using the calculated correlation and the second color information.

公开(公告)号：US20250067664A1

公开(公告)日：2025-02-27

申请号：US18726285

申请日：2022-12-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Masafumi ASANO ,  Takanobu KAITSUKA ,  Yuji OTSUKI ,  Yasutoshi UMEHARA

IPC: G01N21/3563 ,  B23K26/364 ,  C23C16/02 ,  C23C16/04 ,  C23C16/52 ,  G01N21/95

Abstract: There is provided a determination method comprising: a post-embedding measurement step for performing spectroscopic measurement on a substrate in which a pattern including a recess is formed, the recess having an embedding material embedded therein, and measuring an absorbance spectrum of the substrate having the embedding material embedded therein; and a determination step for determining an embedded state of the recess based on an integrated value of an intensity of the measured absorbance spectrum of the substrate at a plurality of wavenumbers.

公开(公告)号：US20210270597A1

公开(公告)日：2021-09-02

申请号：US17253752

申请日：2019-06-18

Applicant: Tokyo Electron Limited

Inventor： Yasutoshi UMEHARA

IPC: G01B11/06 ,  G01N21/47

Abstract: A film thickness measurement device according to one aspect of the present disclosure includes: a first computing unit configured to, for each location on a first wafer having a known thickness other than a reference location on the first wafer, calculate a relative reflectance of a reflection spectral signal of reflected light detected by a collection probe, with respect to a reference reflection spectral signal of reflected light detected by the collection probe at the reference location on the first wafer; a specifying unit configured to specify a relationship between the relative reflectance calculated by the first computing unit and distance data representing a distance between the location on the first wafer and the collection probe; a second computing unit configured to calculate relative reflectances each corresponding to distance data representing a distance between the collection probe and a corresponding location on a second wafer to be measured, based on the relationship specified by the specifying unit; and a correction unit configured to, in calculating film thickness at each location on the second wafer, correct the reference reflection spectral signal based on the relative reflectances calculated by the second computing unit.

公开(公告)号：US20150055754A1

公开(公告)日：2015-02-26

申请号：US14529483

申请日：2014-10-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasutoshi UMEHARA

IPC: G01N23/04 ,  G06T7/00

CPC classification number: G01N23/04 ,  G01B15/04 ,  G01N2223/418 ,  G01N2223/6113 ,  G06T7/0006 ,  G06T7/001 ,  G06T2207/10081 ,  G06T2207/10116 ,  G06T2207/20024 ,  G06T2207/30148

Abstract: An X-ray inspection method which is capable of measuring a shape of an inspection object at a high speed in a non-destructive manner is provided. The X-ray inspection method includes: a simulation image generating process of generating simulation images of a plurality of transmission images having different shape parameters of an inspection object; an X-ray imaging process of capturing an X-ray transmission image transmitting the inspection object; and a shape estimating process of estimating a shape parameter of a simulation image whose evaluation value indicating a similarity with the X-ray transmission image satisfies predetermined conditions among the plurality of simulation images, as a shape of the inspection object.

Abstract translation: 提供了能够以非破坏性的方式高速地测量检查对象的形状的X射线检查方法。 X射线检查方法包括：模拟图像生成处理，生成具有检查对象的不同形状参数的多个发送图像的模拟图像; 拍摄X射线透射图像的X射线成像处理，所述X射线透射图像传送所述检查对象; 以及形状估计处理，用于估计表示与X射线透射图像的相似度的评价值的模拟图像的形状参数满足多个模拟图像中的预定条件，作为检查对象的形状。

公开(公告)号：US20130236088A1

公开(公告)日：2013-09-12

申请号：US13783624

申请日：2013-03-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasutoshi UMEHARA ,  Motoi OKADA ,  Shuji IWANAGA

IPC: G06T7/00

CPC classification number: G06T7/001 ,  G06T2207/10016 ,  G06T2207/30148

Abstract: Provide is a process monitoring device in a semiconductor manufacturing apparatus that can readily and reliably monitor the process in the semiconductor manufacturing apparatus. The process monitoring device includes a storage unit that stores a normal state moving image data indicating a normal state of the process; an image capturing unit that captures an image of a state of the process to be monitored to acquire a moving image data; an abnormality level calculation unit configured to extract a feature amount for each frame of the moving image data and the normal state moving image data, and calculate an abnormality level based on the extracted feature amount; and a display unit that displays the abnormality level calculated by the abnormality level calculation unit in association with a frame position of the moving image data.

Abstract translation: 提供一种可以容易且可靠地监视半导体制造装置中的处理的半导体制造装置中的过程监视装置。 处理监视装置包括存储单元，存储指示处理的正常状态的正常状态运动图像数据; 图像捕获单元，捕获要监视的处理的状态的图像以获取运动图像数据; 异常度计算单元，被配置为提取运动图像数据和正常状态运动图像数据的每帧的特征量，并且基于提取的特征量来计算异常水平; 以及显示单元，其与运动图像数据的帧位置相关联地显示由异常水平计算单元计算的异常水平。