CONDUCTIVE THIN FILM MANUFACTURING METHOD
    1.
    发明申请

    公开(公告)号:US20200248301A1

    公开(公告)日:2020-08-06

    申请号:US16853141

    申请日:2020-04-20

    Applicant: ULVAC, INC.

    Abstract: A first voltage is applied to a first positive electrode and a first negative electrode of an attraction plate in a lying posture to attract a dielectric object to be attracted on the attraction plate. The attraction plate is turned to a stand posture while attracting the dielectric object by a gradient force, and a conductive thin film is grown while applying a second voltage to a second positive electrode and a second negative electrode to generate an electrostatic force. Since the object is continuously attracted, the attraction plate will not detach. After having started attraction by electrostatic force, introduction of heat medium gas between the object and the attraction plate allows for temperature control of the object.

    VACUUM PROCESSING DEVICE AND VACUUM PROCESSING METHOD
    3.
    发明申请
    VACUUM PROCESSING DEVICE AND VACUUM PROCESSING METHOD 审中-公开
    真空处理装置和真空处理方法

    公开(公告)号:US20140158301A1

    公开(公告)日:2014-06-12

    申请号:US14177627

    申请日:2014-02-11

    Applicant: ULVAC, Inc.

    Abstract: A vacuum processing device and a vacuum processing method that strongly chuck and hold an insulating substrate when plasma processing is performed are provided. The vacuum processing device includes a vacuum chamber that is grounded; a vacuum evacuation device connected to the vacuum chamber; a chuck device arranged inside the vacuum chamber; a chuck power supply for applying an output voltage to a single-pole type electrode provided in the chuck device; a plasma generation gas introduction device for introducing a plasma generation gas into the vacuum chamber; and a plasma generation portion which converts the plasma generation gas into plasma. An object to be processed is arranged on the chuck device; and the chuck power supply applies an output voltage to the single-pole type electrode while the plasma is being generated inside the vacuum chamber; and the object to be processed is processed by the plasma while the object to be processed is being chucked by the chuck device. An insulating substrate is used as the object to be processed and the chuck power supply applies the output voltage that periodically changes between a positive voltage and a negative voltage to the single-pole type electrode.

    Abstract translation: 提供了一种在执行等离子体处理时强力夹持和保持绝缘基板的真空处理装置和真空处理方法。 真空处理装置包括接地的真空室; 连接到真空室的真空排气装置; 设置在真空室内的卡盘装置; 用于向设置在所述卡盘装置中的单极型电极施加输出电压的卡盘电源; 用于将等离子体产生气体引入到真空室中的等离子体产生气体引入装置; 以及将等离子体产生气体转换为等离子体的等离子体产生部。 待加工对象布置在卡盘装置上; 并且所述卡盘电源在所述真空室内产生等离子体时向所述单极型电极施加输出电压; 并且待加工对象被等离子体处理时,被加工物被卡盘装置卡住。 使用绝缘基板作为待处理对象,并且卡盘电源将正电压和负电压之间周期性变化的输出电压施加到单极型电极。

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